TSOP12..SB1
Vishay Telefunken
1 (7)Rev. 9, 30-Mar 01 www.vishay.com
Document Number 82018
Photo Modules for PCM Remote Control Systems
Available types for different carrier frequencies
Type fo Type fo
TSOP1230SB1 30 kHz TSOP1233SB1 33 kHz
TSOP1236SB1 36 kHz TSOP1237SB1 36.7 kHz
TSOP1238SB1 38 kHz TSOP1240SB1 40 kHz
TSOP1256SB1 56 kHz
Description
The TSOP12..SB1 – series are miniaturized receivers
for infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be de-
coded by a microprocessor. The main benefit is the
reliable function even in disturbed ambient and the
protection against uncontrolled output pulses.
96 12581
Features
D
Photo detector and preamplifier in one package
D
Internal filter for PCM frequency
D
Improved shielding against electrical field
disturbance
D
TTL and CMOS compatibility
D
Output active low
D
Low power consumption
D
Suitable burst length ≥10 cycles/burst
Special Features
D
Enhanced immunity against all kinds of
disturbance light
D
No occurrence of disturbance pulses at the
output
Block Diagram
94 8136
PIN
Input
AGC
Control
Circuit
Band
Pass Demodu-
lator
80 k
W
1
2
3
VS
OUT
GND
TSOP12..SB1
Vishay Telefunken
Rev. 9, 30-Mar-01
www.vishay.com Document Number 82018
2 (7)
Absolute Maximum Ratings
Tamb = 25
_
CParameter Test Conditions Symbol Value Unit
Supply Voltage (Pin 2) VS–0.3...6.0 V
Supply Current (Pin 2) IS5 mA
Output Voltage (Pin 3) VO–0.3...6.0 V
Output Current (Pin 3) IO5 mA
Junction Temperature Tj100
°
C
Storage Temperature Range Tstg –25...+85
°
C
Operating Temperature Range Tamb –25...+85
°
C
Power Consumption (Tamb
x
85
°
C) Ptot 50 mW
Soldering Temperature t
x
10 s, 1 mm from case Tsd 260
°
C
Basic Characteristics
Tamb = 25
_
C
Parameter Test Conditions Symbol Min Typ Max Unit
Supply Current (Pin 2) VS = 5 V, Ev = 0 ISD 0.4 0.6 1.5 mA
y()
VS = 5 V, Ev = 40 klx, sunlight ISH 1.0 mA
Supply Voltage (Pin 2) VS4.5 5.5 V
Transmission Distance Ev = 0, test signal see fig.7,
IR diode TSAL6200, IF = 400 mA d 35 m
Output Voltage Low (Pin 3) IOSL = 0.5 mA,Ee = 0.7 mW/m2,
f = fo, tp/T = 0.4 VOSL 250 mV
Irradiance (30 – 40 kHz) Pulse width tolerance:
tpi – 5/fo < tpo < tpi + 6/fo,
test signal see fig.7
Ee min 0.35 0.5 mW/m2
Irradiance (56 kHz) Pulse width tolerance:
tpi – 5/fo < tpo < tpi + 6/fo,
test signal see fig.7
Ee min 0.4 0.6 mW/m2
Irradiance tpi – 5/fo < tpo < tpi + 6/foEe max 30 W/m2
Directivity Angle of half transmission distance ϕ1/2 ±45 deg
Application Circuit
12844
TSAL62..
TSOP12.. 2
3
1
4.7
m
F *)
m
C
>10 k
W
optional
100
W
*) +5V
*) recommended to suppress power supply disturbances
GND
**) The output voltage should not be hold continuously at a voltage below 3.3V by the external circuit.
**)
TSOP12..SB1
Vishay Telefunken
3 (7)Rev. 9, 30-Mar 01 www.vishay.com
Document Number 82018
Suitable Data Format
The circuit of the TSOP12..SB1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpassfilter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and
disturbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fullfill the following condition:
•Carrier frequency should be close to center
frequency of the bandpass (e.g. 38kHz).
•Burst length should be 10 cycles/burst or longer.
•After each burst which is between 10 cycles and 70
cycles a gap time of at least 14 cycles is neccessary.
•For each burst which is longer than 1.8ms a
corresponding gap time is necessary at some time in
the data stream. This gap time should be at least 4
times longer than the burst.
•Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are:
NEC Code (repetitive pulse), NEC Code (repetitive
data), Toshiba Micom Format, Sharp Code, RC5
Code, RC6 Code, R–2000 Code.
When a disturbance signal is applied to the
TSOP12..SB1 it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occure.
Some examples for such disturbance signals which
are suppressed by the TSOP12..SB1 are:
•DC light (e.g. from tungsten bulb or sunlight)
•Continuous signal at 38kHz or at any other
frequency
•Signals from fluorescent lamps with electronic
ballast with high or low modulation (see Figure A or
Figure B).
0 5 10 15 20
time [ms]
Figure A: IR Signal from Fluorescent Lamp with low Modulation
0 5 10 15 20
time [s]
Figure B: IR Signal from Fluorescent Lamp with high Modulation
TSOP12..SB1
Vishay Telefunken
Rev. 9, 30-Mar-01
www.vishay.com Document Number 82018
4 (7)
Typical Characteristics (Tamb = 25
_
C unless otherwise specified)
0.7 0.8 0.9 1.0 1.1
E / E – Rel. Responsitivity
e min
f/f0 – Relative Frequency
1.3
94 8143
0.0
0.2
0.4
0.6
0.8
1.0
e
1.2
f = f0
"
5%
D
f ( 3dB ) = f0/10
Figure 1. Frequency Dependence of Responsivity
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.0 10000.0
Ee – Irradiance ( mW/m2 )12841
po
t – Output Pulse Length (ms)
Input burst duration
l
= 950 nm,
optical test signal, fig.7
Figure 2. Sensitivity in Dark Ambient
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.01 0.10 1.00 10.00 100.00
E – DC Irradiance (W/m2)96 12111
e min
E – Threshold Irradiance (mW/m )
2
Correlation with ambient light sources
(Disturbance effect):10W/m2
^
1.4klx
(Stand.illum.A,T=2855K)
^
8.2klx
(Daylight,T=5900K)
Ambient,
l
= 950 nm
Figure 3. Sensitivity in Bright Ambient
0.0 0.4 0.8 1.2 1.6
0.0
0.4
0.8
1.2
2.0
E – Field Strength of Disturbance ( kV/m )
2.0
94 8147
1.6
E – Threshold Irradiance ( mW/m )
e min 2
f(E)=f0
Figure 4. Sensitivity vs. Electric Field Disturbances
0.01 0.1 1 10 100
0.1
1
10
1000
94 9106
D
VsRMS – AC Voltage on DC Supply Voltage (mV)
E – Threshold Irradiance ( mW/m )
e min 2
f = f0
10 kHz
100 Hz
1 kHz
Figure 5. Sensitivity vs. Supply Voltage Disturbances
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
–30 –15 0 15 30 45 60 75 90
Tamb – Ambient Temperature ( °C )96 12112
e min
E – Threshold Irradiance (mW/m )
2
Sensitivity in dark ambient
Figure 6. Sensitivity vs. Ambient Temperature
TSOP12..SB1
Vishay Telefunken
5 (7)Rev. 9, 30-Mar 01 www.vishay.com
Document Number 82018
Ee
T
tpi *
t
* tpi
w
10/fo is recommended for optimal function
VO
VOH
VOL t
16110
Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
Output Signal
td1 )tpo2
)
1 ) 7/f0 < td < 15/f0
2 ) tpo = tpi
"
6/f0
Figure 7. Output Function
Ee
t
VO
VOH
VOL t
600
m
s 600
m
s
T = 60 ms
Ton Toff
94 8134
Optical Test Signal
Output Signal, ( see Fig.10 )
Figure 8. Output Function
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
10 20 30 40 50 60 70 80 90
Burstlength [number of cycles/burst]16153
Envelope Duty Cycle
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.0 10000.0
Ee – Irradiance (mW/m2)12843
on off
T ,T – Output Pulse Length (ms)
Ton
l
= 950 nm,
optical test signal, fig.8
Toff
Figure 10. Output Pulse Diagram
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
–30 –15 0 15 30 45 60 75 90
Tamb – Ambient Temperature ( °C )96 12115
I – Supply Current ( mA )
s
Vs = 5 V
Figure 11. Supply Current vs. Ambient Temperature
750 850 950 1050
0
0.2
0.4
0.6
0.8
1.2
S ( ) – Relative Spectral Sensitivity
rel
l
– Wavelength ( nm )
1150
94 8408
1.0
l
Figure 12. Relative Spectral Sensitivity vs. Wavelength
TSOP12..SB1
Vishay Telefunken
Rev. 9, 30-Mar-01
www.vishay.com Document Number 82018
6 (7)
95 11339p2
0.4 0.2 0 0.2 0.4 0.6
0.6
0.9
0°30°
10°20°
40°
50°
60°
70°
80°
1.0
0.8
0.7
drel – Relative Transmission Distance
Figure 13. Vertical Directivity ϕy
95 11340p2
0.4 0.2 0 0.2 0.4 0.6
0.6
0.9
0°30°
10°20°
40°
50°
60°
70°
80°
1.0
0.8
0.7
drel – Relative Transmission Distance
Figure 14. Horizontal Directivity ϕx
Dimensions in mm
96 12225
TSOP12..SB1
Vishay Telefunken
7 (7)Rev. 9, 30-Mar 01 www.vishay.com
Document Number 82018
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
