Advance Technical Information PolarHVTM HiPerFET N-Channel Power MOSFET Phase leg Topology FMM22-06PF 3 3 VDSS ID25 T1 55 RDS(on) trr(max) = = 600V 12A 350m 200ns 4 4 T2 1 1 22 Symbol Test Conditions TJ TJM Tstg ISOPLUS i4-PakTM Maximum Ratings -55 ... +150 150 -55 ... +150 C C C VISOLD 50/60HZ, RMS, t = 1min, leads-to-tab 2500 ~V TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s 300 260 C C FC Mounting force 20..120 / 4.5..27 N/lb. 1 Isolated Tab 5 Features z Maximum Ratings Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation Avalanche rated Low QG Low Drain-to-Tab capacitance Low package inductance Symbol Test Conditions VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS VGSM Continuous Transient 30 40 V V ID25 TC = 25C 12 A IDM TC = 25C, pulse width limited by TJM 66 A Advantages IA TC = 25C 22 A z EAS TC = 25C 1.0 J z dV/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 130 W z z z z z z z Low gate drive requirement High power density Fast intrinsic rectifier Low drain to ground capacitance Fast switching Applications Symbol Test Conditions CP Coupling capacitance between shorted pins and mounting tab in the case dS ,dA dS ,dA pin - pin pin - backside metal Weight (c) 2008 IXYS CORPORATION, All rights reserved z Characteristic Values Min. Typ. Max. 40 z z pF z z 1.7 5.5 mm mm 9 z DC and AC motor drives UPS, solar and wind power inverters Synchronous rectifiers Multi-phase DC to DC converters Industrial battery chargers Switching power supplies g DS100038(09/08) FMM22-06PF Symbol Test Conditions2 (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 600 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = 30 V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 11A, Note 1 gfs VDS = 20V, ID = 11A, Note 1 V 5.0 V 100 nA 25 A 250 A TJ = 125C 350 m 15 Ciss Coss 20 S 3600 pF 305 pF 38 pF VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times 20 ns tr VGS = 10V, VDS = 0.5 z VDSS, ID = 11A 20 ns td(off) RG = 4 (External) 60 ns tf 23 ns Qg(on) 58 nC 20 nC 22 nC Qgs VGS= 10V, VDS = 0.5 z ISOPLUS i4-PakTM Outline VDSS, ID = 11A Qgd Ref: IXYS CO 0077 R0 0.95 C/W RthJC RthCS C/W 0.15 Source-Drain Diode Characteristic Values TJ = 25C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions3 IS VGS = 0V 12 A ISM Repetitive, pulse width limited by TJM 66 A VSD IF = 22A, VGS = 0V, Note 1 1.5 V trr IF = 22A, -di/dt = 100A/s 200 ns QRM VR = 100V, VGS = 0V 1.0 C Note 1: Pulse test, t 300s, duty cycle, d 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2