MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
Enhancement--Mode Lateral MOSFETs
Designed for commercial and industrial broadband applications with
frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast
applications.
!Typical Performance (Narrowband Test Circuit): VDD =50Volts,I
DQ =
350 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
"D
(%)
ACPR
(dBc)
DVB--T (8k OFDM) 18 Avg. 860 22.0 28.5 --62.0
!Typical Performance (Broadband Reference Circuit): VDD =50Volts,
IDQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
"D
(%)
Output
Signal PAR
(dB)
IMD
Shoulder
(dBc)
DVB--T (8k OFDM) 18 Avg. 470 21.6 26.8 8.6 --31.8
650 22.9 28.0 8.7 --34.4
860 21.9 28.3 7.9 --29.2
Features
!Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
90 Watts CW Output Power
!Characterized with Series Equivalent Large--Signal Impedance Parameters
!Internally Input Matched for Ease of Use
!Qualified Up to a Maximum of 50 VDD Operation
!Integrated ESD Protection
!Excellent Thermal Stability
!Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
!225#C Capable Plastic Package
!In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +110 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Storage Temperature Range Tstg -- 65 to +150 #C
Case Operating Temperature TC150 #C
Operating Junction Temperature (1,2) TJ225 #C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 76#C, 18 W CW, 50 Vdc, IDQ = 350 mA, 860 MHz
Case Temperature 80#C, 90 W CW, 50 Vdc, IDQ = 350 mA, 860 MHz
R$JC
0.79
0.82
#C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6V3090N
Rev. 1, 12/2011
Freescale Semiconductor
Technical Data
470--860 MHz, 90 W, 50 V
BROADBAND
RF POWER LDMOS TRANSISTORS
PARTS ARE SINGLE--ENDED
(Top View)
Drain
Figure 1. Pin Connections
Drain
Gate
Gate
Note: Exposed backside of the package is
the source terminal for the transistor.
CASE 1484--04, STYLE 1
T O -- 2 7 2 W B -- 4
PLASTIC
MRF6V3090NBR1(NBR5)
CASE 1486--03, STYLE 1
T O -- 2 7 0 W B -- 4
PLASTIC
MRF6V3090NR1(NR5)
MRF6V3090NR1
MRF6V3090NR5
MRF6V3090NBR1
MRF6V3090NBR5
%Freescale Semiconductor, Inc., 2010--2011.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2 (2001--4000 V)
Machine Model (per EIA/JESD22--A115) B (201--400 V)
Charge Device Model (per JESD22--C101) IV (>1000 V)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 #C
Table 5. Electrical Characteristics (TA=25#C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 0.5 &Adc
Drain--Source Breakdown Voltage
(ID=50mA,V
GS =0Vdc)
V(BR)DSS 115 — — Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50Vdc,V
GS =0Vdc)
IDSS — — 10 &Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0Vdc)
IDSS — — 20 &Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 200 &Adc)
VGS(th) 0.9 1.6 2.4 Vdc
Gate Quiescent Voltage
(VDD =50Vdc,I
D= 350 mAdc, Measured in Functional Test)
VGS(Q) 2.0 2.7 3.5 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=0.5Adc)
VDS(on) —0.2 —Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =50Vdc'30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —41 —pF
Output Capacitance
(VDS =50Vdc'30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —65.4 —pF
Input Capacitance (1)
(VDS =50Vdc,V
GS =0Vdc'30 mV(rms)ac @ 1 MHz)
Ciss —591 —pF
Functional Tests (In Freescale DVB--T Narrowband Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ = 350 mA, Pout =18WAvg.,
f = 860 MHz, DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ '4 MHz Offset @ 4 kHz Bandwidth.
Power Gain Gps 21.0 22.0 24.0 dB
Drain Efficiency "D27.5 28.5 — %
Adjacent Channel Power Ratio ACPR —--62.0 --60.0 dBc
Input Return Loss IRL — -- 1 4 -- 9 dB
1. Part internally input matched.
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
3
RF Device Data
Freescale Semiconductor, Inc.
Figure 2. MRF6V3090NR1(NBR1) 860 MHz Narrowband Test Circuit Schematic
Z10, Z11 1.292()0.079(Microstrip
Z12 0.680()0.571(Microstrip
Z13 0.132()0.117(Microstrip
Z14 0.705()0.117(Microstrip
Z15 0.159()0.117(Microstrip
Z16 0.140()0.067(Microstrip
Z17 0.077()0.067(Microstrip
Z18 0.163()0.067(Microstrip
Z1 0.266()0.067(Microstrip
Z2 0.331()0.067(Microstrip
Z3 0.598()0.067(Microstrip
Z4 0.315()0.276(Microstrip
Z5 0.054()0.669(Microstrip
Z6 0.419()0.669(Microstrip
Z7 0.256()0.669(Microstrip
Z8 0.986()0.071(Microstrip
Z9 0.201()0.571(Microstrip
Z1
RF
INPUT
C5
Z2 Z3 Z4 Z5 Z7
DUT
Z13
C14
RF
OUTPUT
Z15
VBIAS
VSUPPLY
R1
C9 C10C8
C1 C3
Z9 Z17Z14
C12C11
R2
C6
C16 C17 C18
+
+
Z10
Z11
Z8
C2
Z6
C7
C4 Z12 Z18Z16
C15 C13
+
Table 6. MRF6V3090NR1(NBR1) 860 MHz Narrowband Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 22 &F, 35 V Tantalum Capacitor T491X226K035AT Kermet
C2, C9, C17 10 &F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C3, C5, C8, C14, C16 43 pF Chip Capacitors ATC100B430JT500XT ATC
C4 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC
C6 2.2 pF Chip Capacitor ATC100B2R2JT500XT ATC
C7 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC
C10, C18 220 &F, 100 V Electrolytic Capacitors EEVFK2A221M Panasonic--ECG
C11, C15 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC
C12 3.0 pF Chip Capacitor ATC100B3R0CT500XT ATC
C13 0.7 pF Chip Capacitor ATC100B0R7BT500XT ATC
R1 10 k*, 1/4 W Chip Resistor CRCW120610KOJNEA Vishay
R2 10 *, 1/4 W Chip Resistor CRCW120610ROJNEA Vishay
PCB 0.030(,+r=3.5 RF--35 Taconic
4
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
Figure 3. MRF6V3090NR1(NBR1) 860 MHz Narrowband Test Circuit Component Layout
MRF6V3090N
Rev. 0
--
--
R1
R2
C1
C2 C3
C4
C5 C6
C7
C8 C9
C10
C11
C12 C13
C14
C15
C16 C17
C18
CUT OUT AREA
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
"D
Gps
VDD =50Vdc,I
DQ = 350 mA, f = 860 MHz
50
10
1000
02010
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
30
Ciss
100
40
Coss
Measured with '30 mV(rms)ac @ 1 MHz, VGS =0Vdc
24
1
0
70
100
23
21
19
60
50
40
30
Pout, OUTPUT POWER (WATTS)
Figure 5. CW Power Gain and Drain Efficiency
versus Output Power (Narrowband Test Circuit)
Gps, POWER GAIN (dB)
"D, DRAIN EFFICIENCY (%)
22
20
17
200
20
47
56
-- 6
54
Pin, INPUT POWER (dBm)
Figure 6. CW Output Power versus Input Power
(Narrowband Test Circuit)
53
4
52
-- 2 0 2
Pout, OUTPUT POWER (dBm)
P3dB = 51.28 dBm (134.3 W)
Actual
Ideal
16
25
10
23
21
Pout, OUTPUT POWER (WATTS)
Figure 7. CW Power Gain versus Output Power
(Narrowband Test Circuit)
Gps, POWER GAIN (dB)
30
20
130 150
Figure 8. CW Power Gain and Drain Efficiency versus
Output Power (Narrowband Test Circuit)
Pout, OUTPUT POWER (WATTS)
Gps, POWER GAIN (dB)
18
25
1
22
24
23
100 200
VDD =50Vdc,I
DQ = 350 mA, f = 860 MHz
IDQ = 350 mA, f = 860 MHz
50
49
-- 4
18
50 70 90 110
VDD =40V
50 V
25_C
TC=--30_C
85_C
Gps
19
21
20
VDD =50Vdc,I
DQ = 350 mA, f = 860 MHz
0
70
10
"D, DRAIN EFFICIENCY (%)
18 10
Crss
10
P2dB = 51.06 dBm (127.6 W)
P1dB = 50.7 dBm (117.5 W)
55
51
48 17
19
22
24
45 V
"D
TC=--30_C
85_C
25_C
10
20
30
40
50
60
-- 5 -- 3 -- 1 1 3 20 40 60 80 100 120 140
6
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
TYPICAL CHARACTERISTICS — TWO--TONE (NARROWBAND TEST CIRCUIT)
Figure 9. Intermodulation Distortion Products
versus Output Power
-- 7 0
-- 1 0
10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
VDD =50Vdc,I
DQ = 350 mA, f1 = 854 MHz
f2 = 860 MHz, Two--Tone Measurements
3rd Order
-- 2 0
-- 3 0
-- 4 0
IMD, INTERMODULATION DISTORTION (dBc)
-- 6 0
5th Order
1
-- 5 0
Figure 10. Intermodulation Distortion
Products versus Two--Tone Spacing
10
-- 2 0
1
7th Order
TWO--TONE SPACING (MHz)
5th Order
3rd Order
-- 3 5
-- 4 5
-- 5 5
90
IMD, INTERMODULATION DISTORTION (dBc)
Figure 11. Two--Tone Power Gain versus
Output Power
20
23.5
1
IDQ = 450 mA
Pout, OUTPUT POWER (WATTS) PEP
23
20.5
10 200
Gps, POWER GAIN (dB)
22.5
21.5
VDD = 50 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two--Tone Measurements, 6 MHz Tone Spacing
Figure 12. Third Order Intermodulation
Distortion versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
10
VDD = 50 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two--Tone Measurements, 6 MHz Tone Spacing
1001
-- 6 5
-- 2 5
IDQ = 250 mA
300 mA
VDD =50Vdc,P
out = 90 W (PEP), IDQ = 350 mA
f = 860 MHz, Two--Tone Measurements
-- 3 0
-- 4 0
-- 5 0
-- 6 0
250 mA
22
21
350 mA 450 mA
-- 2 0
-- 4 0
-- 5 0
-- 6 0
-- 1 0
-- 3 0
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
100 200
100
300 mA
350 mA
200
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — DVB--T (8k OFDM)
12
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 13. Single--Carrier DVB--T (8k OFDM)
10
1
0.1
0.01
0.001
2468
PROBABILITY (%)
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation
5 Symbols
5
-- 2 0
-- 5
7.61 MHz
f, FREQUENCY (MHz)
Figure 14. DVB--T (8k OFDM) Spectrum
-- 3 0
-- 4 0
-- 5 0
-- 9 0
-- 7 0
-- 8 0
--100
-- 11 0
-- 6 0
-- 4 -- 3 -- 2 -- 1 0 1 2 3 4
4kHzBW
(dB)
10
ACPR Measured at 4 MHz Offset
from Center Frequency
Figure 15. Single--Carrier DVB--T (8k OFDM) Power Gain
versus Output Power (Narrowband Test Circuit)
23
1
IDQ = 450 mA
Pout, OUTPUT POWER (WATTS) AVG.
10 40
Gps, POWER GAIN (dB)
350 mA
VDD = 50 Vdc, f = 860 MHz
DVB--T (8k OFDM), 64 QAM Data
Carrier Modulation, 5 Symbols
22.5
22
21.5
21
20.5
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 16. Single--Carrier DVB--T (8k OFDM) ACPR
versus Output Power (Narrowband Test Circuit)
-- 6 8
-- 5 4
1
Pout, OUTPUT POWER (WATTS) AVG.
-- 5 6
10 40
-- 6 0
VDD = 50 Vdc, f = 860 MHz
DVB--T (8k OFDM), 64 QAM Data
Carrier Modulation, 5 Symbols
-- 6 2
IDQ = 250 mA
300 mA
-- 6 4
-- 6 6
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Figure 17. Single--Carrier DVB--T (8k OFDM) Drain
Efficiency, Power Gain and ACPR versus Output Power
(Narrowband Test Circuit)
0-- 7 0
Pout, OUTPUT POWER (WATTS) AVG.
50 -- 4 5
30
10
-- 5 0
1
-- 6 0
40
40
20
-- 5 5
10
-- 6 5
"D
25_C
TC=--30_C
85_CGps
ACPR
VDD =50Vdc,I
DQ = 350 mA
f = 860 MHz, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation
5 Symbols
4kHzBW
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
250 mA
300 mA
-- 5 8
350 mA
450 mA
25_C
-- 3 0 _C
85_C
Gps, POWER GAIN (dB)
"D, DRAIN
EFFICIENCY (%)
8
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
TYPICAL CHARACTERISTICS
250
109
90
TJ, JUNCTION TEMPERATURE (#C)
Figure 18. MTTF versus Junction Temperature -- CW
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110 130 150 170 190
MTTF (HOURS)
210 230
108
105
VDD =50Vdc
Pout =18WAvg.
"D= 28.5%
VDD =50Vdc,I
DQ = 350 mA, Pout = 18 W Average
f
MHz
Zsource
*
Zload
*
860 1.58 -- j0.89 3.51 -- j3.98
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 19. Series Equivalent Source and Load Impedance (Narrowband Test Circuit)
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
9
RF Device Data
Freescale Semiconductor, Inc.
470--860 MHz BROADBAND REFERENCE CIRCUIT
VDD =50Volts,I
DQ = 450 mA, Channel Bandwidth = 8 MHz, Input
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
"D
(%)
Output
PAR
(dB)
IMD
Shoulder
(dBc)
DVB--T (8k OFDM) 4.5 Avg. 470 21.5 11.6 9.9 --37.5
650 22.8 11.8 9.9 --41.7
860 21.8 11.9 9.8 --40.3
9Avg. 470 21.6 18.2 9.5 --37.4
650 22.8 18.6 9.7 --40.2
860 21.8 18.9 9.5 --39.0
18 Avg. 470 21.6 26.8 8.6 --31.8
650 22.9 28.0 8.7 --34.4
860 21.9 28.3 7.9 --29.2
Figure 20. MRF6V3090NR1(NBR1) 470--860 MHz Broadband 2()3(Compact Reference Circuit Component Layout
MRF6V3090N
Rev. 2
C13
R1
C14 C15
C5
C4
C1
C2 C6
C3
Q1
C19C18 C10
C11
C8
C7
C9 C12
C17C16
C20
VDD
VGG
10
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
470--860 MHz BROADBAND REFERENCE CIRCUIT
Table 7. MRF6V3090NR1(NBR1) 470--860 MHz Broadband 2()3(Reference Circuit Component Designations and
Values
Part Description Part Number Manufacturer
C1, C12 100 pF Chip Capacitors ATC100B101JT500XT ATC
C2 1.8 pF Chip Capacitor ATC100B1R8BT500XT ATC
C3 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC
C4, C5, C6 13 pF Chip Capacitors ATC100B130JT500XT ATC
C7, C8, C11 2.2 pF Chip Capacitors ATC100B2R2JT500XT ATC
C9 15 pF Chip Capacitor ATC100B150JT500XT ATC
C10 3.9 pF Chip Capacitor ATC100B3R9CT500XT ATC
C13 47 &F, 16 V Tantalum Capacitor T491D476K016AS Kemet
C14, C17, C19 2.2 &F, 100 V Chip Capacitors C3225X7R2A225KT TDK
C15, C16, C18 220 pF Chip Capacitors ATC100B221JT200XT ATC
C20 470 &F, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp
Q1 RF High Power Transistor MRF6V3090NBR1 Freescale
R1 10 *, 1/4 W Chip Resistor CRCW120610RJ Vishay
PCB 0.030(,+r=3.5 RO4350B Rogers
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
11
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 470--860 MHz BROADBAND REFERENCE CIRCUIT
"D
Gps
24
450
0
60
850
23
21
19
50
40
30
f, FREQUENCY (MHz)
Figure 21. Single--Carrier DVB--T (8k OFDM) Power Gain and Drain
Efficiency versus Frequency (Broadband Reference Circuit)
Gps, POWER GAIN (dB)
"D, DRAIN EFFICIENCY (%)
22
20
900
20
18
10
500 550 600 650 700 750 800
VDD =50Vdc,I
DQ = 450 mA, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
Pout =4.5W
18 W
9W
4.5 W
9W
18 W
12
-- 4 5
0
f, FREQUENCY (MHz)
Figure 22. Single--Carrier DVB--T (8k OFDM) Output PAR and IMD
Shoulder versus Frequency (Broadband Reference Circuit)
450
-- 1 0
-- 2 0
-- 3 0
-- 4 0
OUTPUT PAR (dB)
Pout =4.5W
9W
VDD =50Vdc,I
DQ = 450 mA, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
10
7
6
5
4
3
495 540 585 630 675 720 765 810 900
18 W
4.5 W
9W
18 W
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
26
0
70
Pout, OUTPUT POWER (WATTS) PULSED
Figure 23. Pulsed Power Gain and Drain Efficiency
versus Output Power (Broadband Reference Circuit)
1
50
40
30
30
Gps
"D
60
VDD =50Vdc,I
DQ = 450 mA
Pulse Width = 100 &sec, 10% Duty Cycle
25
24
23
21
20
19
10 100 200
620 MHz
"D,DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
PAR
IMD(1)
IMD, INTERMODULATION
DISTORTION SHOULDER (dBc)
8
9
11
855
-- 5
-- 1 5
-- 2 5
-- 3 5
22
20
10
860 MHz
620 MHz
740 MHz
470 MHz
860 MHz
740
MHz
470 MHz
12
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
PACKAGE DIMENSIONS
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
13
RF Device Data
Freescale Semiconductor, Inc.
14
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
15
RF Device Data
Freescale Semiconductor, Inc.
16
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
17
RF Device Data
Freescale Semiconductor, Inc.
18
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
!AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
!AN1955: Thermal Measurement Methodology of RF Power Amplifiers
!AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
!AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
!EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
!Electromigration MTTF Calculator
!RF High Power Model
!.s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Apr. 2010 !Initial Release of Data Sheet
1Dec. 2011 !Changed “DVB--T OFDM” to “DVB--T (8k OFDM)” throughout
!Fig. 6, CW Output Power versus Input Power: corrected typographical error in dBm to watts conversion
values,p.5
!Fig. 7, CW Power Gain versus Output Power (Narrowband Test Circuit): adjusted x--axis scale from 0 to
140 watts to 10 to 150 watts, p. 5
!Updated Fig. 9, Intermodulation Distortion Products versus Output Power, to correct X--axis PEP power
values,p.6
!Fig. 10, Intermodulation Distortion Products versus Two--Tone Spacing: added f = 860 MHz to graph
callouts, p. 6
!Updated Fig. 11, Two--Tone Power Gain versus Output Power, to correct X--axis PEP power values, p. 6
!Updated Fig. 12, Third Order Intermodulation Distortion versus Output Power, to correct X--axis PEP
power values, p. 6
!Fig. 18, MTTF versus Junction Temperature -- CW: MTTF end temperature on graph changed to match
maximum operating junction temperature, p. 8
!Fig. 19, Series Equivalent Source and Load Impedance: removed plot, p. 9
!Added 470--860 MHz Broadband Reference Circuit frequency table, p. 9
!Added Fig. 20, 470--860 MHz Broadband 2()3(Compact Reference Circuit Component Layout, p. 9
!Added Table 7, 470--860 MHz Broadband 2()3(Reference Circuit Component Designations and Values,
p. 10
!Added Fig. 21, Single--Carrier DVB--T (8k OFDM) Power Gain and Drain Efficiency versus Frequency
(Broadband Reference Circuit), p. 11
!Added Fig. 22, Single--Carrier DVB--T (8k OFDM) Output PAR and IMD Shoulder versus Frequency
(Broadband Reference Circuit), p. 11
!Added Fig. 23, Pulsed Power Gain and Drain Efficiency versus Output Power (Broadband Reference
Circuit),p.11
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
19
RF Device Data
Freescale Semiconductor, Inc.
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescaletand the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
-Freescale Semiconductor, Inc. 2010--2011. All rights reserved.
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1--800--521--6274 or +1--480--768--2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33169354848(French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1--8--1, Shimo--Meguro, Meguro--ku,
Tokyo 153--0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1--800--441--2447 or +1--303--675--2140
Fax: +1--303--675--2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Document Number: MRF6V3090N
Rev. 1, 12/2011
