© Semiconductor Components Industries, LLC, 2017
May, 2019 − Rev. 11
1Publication Order Number:
NCS2008/D
NCS20081/2/4,
NCV20081/2/4
1.2 MHz, 42 mA Low Power
Operational Amplifier
The NCS20081/2/4 is a family of single, dual and quad Operational
Amplifiers (Op Amps) with 1.2 MHz of Gain−Bandwidth Product
(GBWP) and draws only 42 mA of Quiescent current. The NCS2008x
has Input Offset Voltage of 4 mV and operates from 1.8 V to 5.5 V
supply voltage over a wide temperature range (−40°C to +125°C). The
Rail−to−Rail In/Out operation allows the use of the entire supply
voltage range while taking advantage of the 1.2 MHz GBWP. Thus,
this family offers superior performance over many industry standard
parts. These devices are AEC−Q100 qualified which is denoted by the
NCV prefix.
NCS2008x’s low current consumption and low supply voltage
performance in space saving packages, makes them ideal for sensor
signal conditioning and low voltage current sensing applications in
Automotive, Consumer and Industrial markets.
Features
•Wide Bandwidth: 1.2 MHz
•Low Supply Current/ Channel: 42 mA typ (VS = 1.8 V)
•Low Input Offset Voltage: 4 mV max
•Wide Supply Range: 1.8 V to 5.5 V
•Wide Temperature Range: −40°C to +125°C
•Rail−to−Rail Input and Output
•Unity Gain Stable
•Available in Single, Dual and Quad Packages
•NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•Automotive
•Battery Powered/ Portable
•Sensor Signal Conditioning
•Low Voltage Current Sensing
•Filter Circuits
•Unity Gain Buffer
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
www.onsemi.com
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
1
14
SOIC−14
CASE 751A
SC70−5
CASE 419A
1
5
TSOP−5/SOT23−5
CASE 483
Micro8]/MSOP8
CASE 846A
1
8
SOIC−8
CASE 751
TSSOP−8
CASE 948S
TSSOP−14
CASE 948G
See general marking information in the device marking
section on page 2 of this data sheet.
DEVICE MARKING INFORMATION
UDFN6
CASE 517AP
1
6
1
14
NCS20081/2/4, NCV20081/2/4
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2
SOIC−14
CASE 751A
XXXXX
AWLYWWG
1
14
SC70−5
CASE 419A
XXMG
G
UDFN6
CASE 517AP
Micro8]/MSOP8
CASE 846A
SOIC−8
CASE 751
XXXXXX
ALYW
G
1
8
TSSOP−8
CASE 948S
XXXX
XXXX
ALYWG
G
1
14
TSSOP−14
CASE 948G
Single Channel Configuration
NCS20081, NCV20081
Dual Channel Configuration
NCS20082, NCV20082
Quad Channel Configuration
NCS20084, NCV20084
XXXXX = Specific Device Code
A = Assembly Location
WL, L = Wafer Lot
Y = Year
WW, W = Work Week
G or G= Pb−Free Package
XXXX
AYWG
G
1
8
(Note: Microdot may be in either location)
MARKING DIAGRAMS
TSOP−5/SOT23−5
CASE 483
XX MG
G
1
1
5
XXXAYWG
G
XXX
YWW
AG
NCS20081/2/4, NCV20081/2/4
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3
1
4
3
2
14
11
12
13
OUT 1
IN− 1
IN+ 1
VDD
OUT 4
IN− 4
IN+ 4
VSS
7
6
5
8
9
10
IN+ 2
IN− 2
OUT 2
IN+ 3
IN− 3
OUT 3
+
−
+
−
−
++
−
Figure 1. Pin Connections
Single Channel Configuration
NCS20081, NCV20081
Dual Channel Configuration
NCS20082, NCV20082
Quadruple Channel Configuration
NCS20084, NCV20084
1
3
2
5
4OUT
IN−
IN+
VSS
VDD
+
−
SC70−5, SOT23−5 (TSOP−5)
1
3
2
5
4
OUT
IN−
IN+
VSS
VDD
+
−
SOT23−5 (TSOP−5)
SN2 Pinout
1
4
3
2
8
5
6
7
OUT 1
IN− 1
IN+ 1
VSS
VDD
OUT 2
IN− 2
IN+ 2
+
+−
−
UDFN6 1.6 x 1.6
1
3
2
6
4
VSS
IN+
IN−
NC VDD
+
−
5
OUT
SQ3, SN3 Pinout
ORDERING INFORMATION
Device Configuration Automotive Marking Package Shipping†
NCS20081SQ3T2G
Single
No
AAP SC70
Contact local sales office for
more information
NCS20081SN2T1G AER SOT23−5/TSOP−5
NCS20081SN3T1G AEU SOT23−5/TSOP−5
NCS20081MUTAG AP UDFN6
NCV20081SQ3T2G* Yes AAP SC70
NCV20081SN2T1G* AER SOT23−5/TSOP−5
NCS20082DMR2G
Dual
No
2K82 Micro8/MSOP8
NCS20082DR2G NCS20082 SOIC−8
NCS20082DTBR2G K82 TSSOP−8
NCV20082DMR2G*
Yes
2K82 Micro8/MSOP8
NCV20082DR2G* NCS20082 SOIC−8
NCV20082DTBR2G* K82 TSSOP−8
NCS20084DR2G**
Quad**
No TBD SOIC−14
NCS20084DTBR2G** TBD TSSOP−14
NCV20084DR2G**
Yes
TBD SOIC−14
NCV20084DTBR2G** TBD TSSOP−14
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
**In Development. Not yet released.
NCS20081/2/4, NCV20081/2/4
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4
ABSOLUTE MAXIMUM RATINGS (Note 1)
Rating Symbol Limit Unit
Supply Voltage (VDD – VSS) (Note 2) VS6 V
Input Voltage VIVSS − 0.5 to VDD + 0.5 V
Differential Input Voltage VID ±VsV
Maximum Input Current II±10 mA
Maximum Output Current IO±100 mA
Continuous Total Power Dissipation (Note 2) PD200 mW
Maximum Junction Temperature TJ150 °C
Storage Temperature Range TSTG −65 to 150 °C
Mounting Temperature (Infrared or Convection – 20 sec) Tmount 260 °C
ESD Capability (Note 3) Human Body Model
Charge Device Model
ESDHBM
ESDCDM
2000
2000
V
Latch−Up Current (Note 4) ILU 100 mA
Moisture Sensitivity Level (Note 5) MSL Level 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS for Safe Operating Area.
2. Continuous short circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction
temperature of 150°C. Output currents in excess of the maximum output current rating over the long term may adversely affect reliability.
Shorting output to either VDD or VSS will adversely affect reliability.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per JEDEC standard Js−001−2017 (AEC−Q100−002)
ESD Charged Device Model tested per JEDEC standard JS−002−2014 (AEC−Q100−011)
4. Latch−up Current tested per JEDEC standard JESD78E (AEC−Q100−004)
5. Moisture Sensitivity Level tested per IPC/JEDEC standard: J-STD-020A
THERMAL INFORMATION
Parameter Symbol Channels Package
Single Layer
Board (Note 6)
Multi−Layer
Board (Note 7) Unit
Junction to Ambient
Thermal Resistance qJA
Single
SC−70 491 444
°C/W
SOT23−5/TSOP−5 310 247
UDFN6 278 239
Dual
Micro8/MSOP8 236 167
SOIC−8 190 131
TSSOP−8 253 194
Quad
SOIC−14 130 99
TSSOP−14 178 140
6. Value based on 1S standard PCB according to JEDEC51−3 with 1.0 oz copper and a 300 mm2 copper area
7. Value based on 1S2P standard PCB according to JEDEC51−7 with 1.0 oz copper and a 100 mm2 copper area
OPERATING RANGES
Parameter Symbol Min Max Unit
Operating Supply Voltage VS1.8 5.5 V
Differential Input Voltage VID VSV
Input Common Mode Range VICM VSS – 0.2 VDD + 0.2 V
Ambient Temperature TA−40 125 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NCS20081/2/4, NCV20081/2/4
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5
ELECTRICAL CHARACTERISTICS AT VS = 1.8 V
TA = 25°C; RL ≥ 10 kW; VCM = VOUT = mid−supply unless otherwise noted.
Boldface limits apply over the specified temperature range, TA = −40°C to 125°C. (Note 8)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Input Offset Voltage VOS 0.5 3.5 mV
4mV
Offset Voltage Drift DVOS/DT1mV/°C
Input Bias Current (Note 8) IIB 1 pA
1500 pA
Input Offset Current (Note 8) IOS 1 pA
1100 pA
Channel Separation XTLK f = 1 kHz 125 dB
Differential Input Resistance RID 10 GW
Common Mode Input Resistance RIN 10 GW
Differential Input Capacitance CID 1 pF
Common Mode Input Capacitance CCM 5 pF
Common Mode Rejection Ratio CMRR VCM = VSS – 0.2 to VDD + 0.2 48 73 dB
VCM = VSS + 0.2 to VDD − 0.2 45
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain AVOL 86 120 dB
80
Short Circuit Current ISC Output to positive rail, sinking current 15 mA
Output to negative rail, sourcing current 11
Output Voltage High VOH Voltage output swing from positive rail 3 19 mV
20
Output Voltage Low VOL Voltage output swing from negative rail 3 19 mV
20
AC CHARACTERISTICS
Unity Gain Bandwidth UGBW 1.2 MHz
Slew Rate at Unity Gain SR VIN = 1.2 Vpp, Gain = 1 0.4 V/ms
Phase Margin ym60 °
Gain Margin Am19 dB
Settling Time tSVIN = 1.2 Vpp,
Gain = 1
Settling time to 0.1% 5ms
Settling time to 0.01% 6
Open Loop Output Impedance ZOL See
Figure
25
W
NOISE CHARACTERISTICS
Total Harmonic Distortion plus Noise THD+N VIN = 1.2 Vpp, f = 1 kHz, Av = 1 0.005 %
Input Referred Voltage Noise enf = 1 kHz 30 nV/√Hz
f = 10 kHz 24
Input Referred Current Noise inf = 1 kHz 300 fA/√Hz
SUPPLY CHARACTERISTICS
Power Supply Rejection Ratio PSRR No Load 67 90 dB
64
Power Supply Quiescent Current IDD Per channel, no load 42 60 mA
8. Performance guaranteed over the indicated operating temperature range by design and/or characterization.
NCS20081/2/4, NCV20081/2/4
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6
ELECTRICAL CHARACTERISTICS AT VS = 3.3 V
TA = 25°C; RL ≥ 10 kW; VCM = VOUT = mid−supply unless otherwise noted.
Boldface limits apply over the specified temperature range, TA = −40°C to 125°C. (Note 9)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Input Offset Voltage VOS 0.5 3.5 mV
4mV
Offset Voltage Drift DVOS/DT1mV/°C
Input Bias Current (Note 9) IIB 1 pA
1500 pA
Input Offset Current (Note 9) IOS 1 pA
1100 pA
Channel Separation XTLK f = 1 kHz 125 dB
Differential Input Resistance RID 10 GW
Common Mode Input Resistance RIN 10 GW
Differential Input Capacitance CID 1 pF
Common Mode Input Capacitance CCM 5 pF
Common Mode Rejection Ratio CMRR VCM = VSS – 0.2 to VDD + 0.2 53 76 dB
VCM = VSS + 0.2 to VDD − 0.2 48
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain AVOL 90 120 dB
86
Short Circuit Current ISC Output to positive rail, sinking current 15 mA
Output to negative rail, sourcing current 11
Output Voltage High VOH Voltage output swing from positive rail 3 24 mV
25
Output Voltage Low VOL Voltage output swing from negative rail 3 24 mV
25
AC CHARACTERISTICS
Unity Gain Bandwidth UGBW 1.2 MHz
Slew Rate at Unity Gain SR VIN = 2.5 Vpp, Gain = 1 0.4 V/ms
Phase Margin ym60 °
Gain Margin Am18 dB
Settling Time tSVIN = 2.5 Vpp,
Gain = 1
Settling time to 0.1% 5ms
Settling time to 0.01% 6
Open Loop Output Impedance ZOL See
Figure
25
W
NOISE CHARACTERISTICS
Total Harmonic Distortion plus Noise THD+N VIN = 2.5 Vpp, f = 1 kHz, Av = 1 0.005 %
Input Referred Voltage Noise enf = 1 kHz 30 nV/√Hz
f = 10 kHz 24
Input Referred Current Noise inf = 1 kHz 300 fA/√Hz
SUPPLY CHARACTERISTICS
Power Supply Rejection Ratio PSRR No Load 67 90 dB
64
Power Supply Quiescent Current IDD Per channel, no load 42 60 mA
9. Performance guaranteed over the indicated operating temperature range by design and/or characterization.
NCS20081/2/4, NCV20081/2/4
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7
ELECTRICAL CHARACTERISTICS AT VS = 5.5 V
TA = 25°C; RL ≥ 10 kW; VCM = VOUT = mid−supply unless otherwise noted.
Boldface limits apply over the specified temperature range, TA = −40°C to 125°C. (Note 10)
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Input Offset Voltage VOS 0.5 3.5 mV
4mV
Offset Voltage Drift DVOS/DT1mV/°C
Input Bias Current (Note 10) IIB 1 pA
1500 pA
Input Offset Current (Note 10) IOS 1 pA
1100 pA
Channel Separation XTLK f = 1 kHz 125 dB
Differential Input Resistance RID 10 GW
Common Mode Input Resistance RIN 10 GW
Differential Input Capacitance CID 1 pF
Common Mode Input Capacitance CCM 5 pF
Common Mode Rejection Ratio CMRR VCM = VSS – 0.2 to VDD + 0.2 55 79 dB
VCM = VSS + 0.2 to VDD − 0.2 51
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain AVOL 90 120 dB
86
Short Circuit Current ISC Output to positive rail, sinking current 15 mA
Output to negative rail, sourcing current 11
Output Voltage High VOH Voltage output swing from positive rail 3 24 mV
25
Output Voltage Low VOL Voltage output swing from negative rail 3 24 mV
25
AC CHARACTERISTICS
Unity Gain Bandwidth UGBW 1.2 MHz
Slew Rate at Unity Gain SR VIN = 5 Vpp, Gain = 1 0.4 V/ms
Phase Margin ym60 °
Gain Margin Am17 dB
Settling Time tSVIN = 5 Vpp,
Gain = 1
Settling time to 0.1% 5ms
Settling time to 0.01% 6
Open Loop Output Impedance ZOL See
Figure
25
W
NOISE CHARACTERISTICS
Total Harmonic Distortion plus Noise THD+N VIN = 5 Vpp, f = 1 kHz, Av = 1 0.005 %
Input Referred Voltage Noise enf = 1 kHz 30 nV/√Hz
f = 10 kHz 24
Input Referred Current Noise inf = 1 kHz 300 fA/√Hz
SUPPLY CHARACTERISTICS
Power Supply Rejection Ratio PSRR No Load 67 90 dB
64
Power Supply Quiescent Current IDD Per channel, no load 48 70 mA
10.Performance guaranteed over the indicated operating temperature range by design and/or characterization.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NCS20081/2/4, NCV20081/2/4
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8
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, RL ≥ 10 kW, VCM = VOUT = mid−supply unless otherwise specified
Figure 2. Quiescent Current per Channel vs.
Supply Voltage
Figure 3. Quiescent Current vs. Temperature
SUPPLY VOLTAGE (V) TEMPERATURE (°C)
5.04.54.03.53.02.52.01.5
0
10
20
30
50
60
1201008040200−20−40
0
10
20
30
50
60
Figure 4. Offset Voltage vs. Supply Voltage Figure 5. Offset Voltage vs. Temperature
SUPPLY VOLTAGE (V) TEMPERATURE (°C)
5.04.54.03.53.02.52.01.5
0
0.1
0.2
0.3
0.4
0.5
0.8
1201008060200−20−40
0
0.1
0.2
0.3
0.4
0.5
0.8
Figure 6. Offset Voltage vs. Common Mode
Voltage
Figure 7. Open−loop Gain and Phase Margin
vs. Frequency
COMMON MODE VOLTAGE (V) FREQUENCY (Hz)
2.001.250.500−0.50−1.25−2.00−2.75
−4
−3
−2
−1
0
2
3
4
10M1M100k 100M10k1k1001
−20
0
20
40
60
100
120
140
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
OFFSET VOLTAGE (mV)
OFFSET VOLTAGE (mV)
OFFSET VOLTAGE (mV)
GAIN (dB)
5.5
T = 25°C
T = 125°C
T = −40°C
60 140
VS = 1.8 V
VS = 3.3 V
VS = 5.5 V
T = 25°C
T = 125°C
T = −40°C
5.5
VS = 1.8 V
VS = 3.3 V
VS = 5.5 V
40 140
80
PHASE MARGIN (°)
0
45
90
135
180
Gain
Phase Margin
RL = 10 kW
CL = 15 pF
T = 25°C
1
VS = 5.5 V
10 units
2.75
40 40
0.6
0.7
0.6
0.7
10
NCS20081/2/4, NCV20081/2/4
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9
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, RL ≥ 10 kW, VCM = VOUT = mid−supply unless otherwise specified
Figure 8. Phase Margin vs. Capacitive Load Figure 9. THD + N vs. Output Voltage
CAPACITIVE LOAD (pF) OUTPUT VOLTAGE (Vrms)
5004003002001000
0
10
20
30
40
50
60
10.10.01
0.0001
0.001
0.01
0.1
1
10
100
Figure 10. THD + N vs. Frequency Figure 11. Input Voltage Noise vs. Frequency
FREQUENCY (Hz) FREQUENCY (Hz)
100k10k1k10010
0.001
0.01
0.1
1
100k10k1k100101
0
100
200
300
400
500
600
Figure 12. Input Current Noise vs. Frequency Figure 13. PSRR vs. Frequency
FREQUENCY (Hz) FREQUENCY (Hz)
100k10k1k100101
0
100
300
400
500
600
800
900
1M100k10k1k10010
0
40
120
PHASE MARGIN (°)
THD+N (%)
THD+N (%)
VOLTAGE NOISE (nV/√Hz)
CURRENT NOISE (fA/√Hz)
PSRR (dB)
VS = 5.5 V
RL = 10 kW
T = 25°C
VS = 1.8 V
VS = 3.3 V
VS = 5.5 V
AV = 1
VS = 5.5 V
200
700
20
60
80
VS = 5.5 V
fIN = 1 kHz
AV = 1
VS = 5.5 V
VS = 5.5 V, PSRR+
VS = 5.5 V, PSRR−
VS = 1.8 V, PSRR+
VS = 1.8 V, PSRR−
100
NCS20081/2/4, NCV20081/2/4
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TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, RL ≥ 10 kW, VCM = VOUT = mid−supply unless otherwise specified
Figure 14. CMRR vs. Frequency Figure 15. Output Voltage High to Rail
FREQUENCY (Hz) OUTPUT CURRENT (mA)
1M100k10k1k10010
0
20
40
60
80
100
120
121086420
0
100
200
300
400
500
Figure 16. Output Voltage Low to Rail Figure 17. Non−Inverting Small Signal
Transient Response
OUTPUT CURRENT (mA) TIME (ms)
15.010.05.02.50
0
100
200
300
400
500
543210−1−2
−0.10
−0.02
0.02
0.04
0.06
0.08
0.10
Figure 18. Inverting Small Signal Transient
Response
Figure 19. Non−Inverting Large Signal
Transient Response
TIME (ms) TIME (ms)
543210−1−2
−0.10
−0.08
0
0.02
0.04
0.06
0.08
0.10
12.510.07.55.02.50−2.5−5.0
−1.0
−0.6
−0.2
0
0.2
0.4
0.6
1.0
CMRR (dB)
OUTPUT VOLTAGE TO POSITIVE
RAIL (mV)
OUTPUT VOLTAGE TO NEGATIVE RAIL (mV)
VOLTAGE (V)
VOLTAGE (V)
VOLTAGE (V)
VS = 1.8 V
VS = 3.3 V
VS = 5.5 V
AV = 1 VS = 1.8 V
VS = 3.3 V
VS = 5.5 V
VS = 1.8 V
VS = 3.3 V
VS = 5.5 V
6
0
−0.04
−0.06
−0.08
Input
CL = 10 pF
CL = 100 pF
Input
Output
6
−0.02
−0.04
−0.06
17.5
0.8
−0.4
−0.8
7.5 12.5
15.0
Input
CL = 10 pF
CL = 100 pF
NCS20081/2/4, NCV20081/2/4
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11
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, RL ≥ 10 kW, VCM = VOUT = mid−supply unless otherwise specified
Figure 20. Inverting Large Signal Transient
Response
Figure 21. Input Bias and Offset Current vs.
Temperature
TIME (ms) TEMPERATURE (°C)
17.512.510.07.55.02.50−2.5
−2.0
−1.5
0
−0.5
0.5
1.0
1.5
2.0
1201006040200−20−40
−100
0
100
200
300
400
500
600
Figure 22. Input Bias Current vs. Common
Mode Voltage
Figure 23. 0.1 Hz to 10 Hz Noise
COMMON MODE VOLTAGE (V) TIME (s)
5.04.03.53.02.01.00
−6
−4
−2
0
2
4
6
98654210
−6
−4
−2
0
2
4
6
Figure 24. Channel Separation vs. Frequency Figure 25. Open Loop Output Impedance
vs. Frequency
FREQUENCY (Hz) FREQUENCY (Hz)
10M1M100k10k1k100
−140
−120
−100
−80
−60
VOLTAGE (V)
CURRENT (pA)
CURRENT (pA)
VOLTAGE (mV)
CHANNEL SEPARATION (dB)
IMPEDANCE (W)
Input
Output
20.0
−1.0
80 140
IIB+
IIB−
IOS
IIB+
IIB−
IOS
0.5 1.5 2.5 4.5 5.5 3 7 10
15.0
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
10 100 1k 10k 100k 1M 10M 100M
VS = 1.8 V
VS = 3.3 V
VS = 5.5 V
VCM = VS/2
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TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, RL ≥ 10 kW, VCM = VOUT = mid−supply unless otherwise specified
Figure 26. Slew Rate vs. Temperature
TEMPERATURE (°C)
1201008060200−20−40
0
0.1
0.2
0.4
0.5
0.6
SLEW RATE (V/ms)
40 140
0.3
SR+
SR−
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13
PACKAGE DIMENSIONS
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
DIM
A
MIN MAX MIN MAX
MILLIMETERS
1.80 2.200.071 0.087
INCHES
B1.15 1.350.045 0.053
C0.80 1.100.031 0.043
D0.10 0.300.004 0.012
G0.65 BSC0.026 BSC
H--- 0.10---0.004
J0.10 0.250.004 0.010
K0.10 0.300.004 0.012
N0.20 REF0.008 REF
S2.00 2.200.079 0.087
B0.2 (0.008) MM
12 3
45
A
G
S
D 5 PL
H
C
N
J
K
−B−
ǒmm
inchesǓ
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
SOLDER FOOTPRINT
NCS20081/2/4, NCV20081/2/4
www.onsemi.com
14
PACKAGE DIMENSIONS
TSOP−5
CASE 483
ISSUE L NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE. DIMENSION A.
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2
FROM BODY.
DIM MIN MAX
MILLIMETERS
A3.00 BSC
B1.50 BSC
C0.90 1.10
D0.25 0.50
G0.95 BSC
H0.01 0.10
J0.10 0.26
K0.20 0.60
M0 10
S2.50 3.00
123
54 S
A
G
B
D
H
C
J
__
0.7
0.028
1.0
0.039
ǒmm
inchesǓ
SCALE 10:1
0.95
0.037
2.4
0.094
1.9
0.074
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.20
5X
CAB
T0.10
2X
2X T0.20
NOTE 5
CSEATING
PLANE
0.05
K
M
DETAIL Z
DETAIL Z
TOP VIEW
SIDE VIEW
A
B
END VIEW
NCS20081/2/4, NCV20081/2/4
www.onsemi.com
15
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517AP
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
ÉÉ
ÉÉ
ÉÉ
A
B
E
D
D2
E2
BOTTOM VIEW
b
e
6X
0.10 B
0.05
AC
C
K6X
NOTE 3
2X
0.10 C
PIN ONE
REFERENCE
TOP VIEW
2X
0.10 C
6X
A
A1
(A3)
0.05 C
0.05 C
CSEATING
PLANE
SIDE VIEW
L
6X
13
56
DIM MIN MAX
MILLIMETERS
A0.45 0.55
A1 0.00 0.05
A3 0.13 REF
b0.20 0.30
D1.60 BSC
D2 1.10 1.30
E1.60 BSC
E2 0.45 0.65
e0.50 BSC
K0.20 −−−
L0.20 0.40
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
MOUNTING FOOTPRINT*
L1
DETAIL A
ÉÉÉ
ÉÉÉ
A1
A3
DETAIL B
OPTIONAL
MOLD CMPD
EXPOSED Cu
L
CONSTRUCTION
OPTIONAL
CONSTRUCTION
DETAIL B
DETAIL A 1.26
0.61
0.50 PITCH
0.52
6X
1.90
DIMENSIONS: MILLIMETERS
0.32
1
6X
SOLDERMASK DEFINED
L1 0.00 0.15
NCS20081/2/4, NCV20081/2/4
www.onsemi.com
16
PACKAGE DIMENSIONS
Micro8t
CASE 846A−02
ISSUE J
S
B
M
0.08 (0.003) A S
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846A-01 OBSOLETE, NEW STANDARD 846A-02.
b
e
PIN 1 ID
8 PL
0.038 (0.0015)
−T−
SEATING
PLANE
A
A1 cL
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DIM
A
MIN NOM MAX MIN
MILLIMETERS
−− −− 1.10 −−
INCHES
A1 0.05 0.08 0.15 0.002
b0.25 0.33 0.40 0.010
c0.13 0.18 0.23 0.005
D2.90 3.00 3.10 0.114
E2.90 3.00 3.10 0.114
e0.65 BSC
L0.40 0.55 0.70 0.016
−− 0.043
0.003 0.006
0.013 0.016
0.007 0.009
0.118 0.122
0.118 0.122
0.026 BSC
0.021 0.028
NOM MAX
4.75 4.90 5.05 0.187 0.193 0.199
HE
HE
DD
E
8X 0.48
0.65
PITCH
5.25
8X
0.80
DIMENSION: MILLIMETERS
RECOMMENDED
NCS20081/2/4, NCV20081/2/4
www.onsemi.com
17
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
SEATING
PLANE
1
4
58
N
J
X 45 _
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
BS
D
H
C
0.10 (0.004)
DIM
A
MIN MAX MIN MAX
INCHES
4.80 5.00 0.189 0.197
MILLIMETERS
B3.80 4.00 0.150 0.157
C1.35 1.75 0.053 0.069
D0.33 0.51 0.013 0.020
G1.27 BSC 0.050 BSC
H0.10 0.25 0.004 0.010
J0.19 0.25 0.007 0.010
K0.40 1.27 0.016 0.050
M0 8 0 8
N0.25 0.50 0.010 0.020
S5.80 6.20 0.228 0.244
−X−
−Y−
G
M
Y
M
0.25 (0.010)
−Z−
Y
M
0.25 (0.010) ZSXS
M
____
1.52
0.060
7.0
0.275
0.6
0.024
1.270
0.050
4.0
0.155
ǒmm
inchesǓ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 11:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
NCS20081/2/4, NCV20081/2/4
www.onsemi.com
18
PACKAGE DIMENSIONS
TSSOP−8
CASE 948S
ISSUE C
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A2.90 3.10 0.114 0.122
B4.30 4.50 0.169 0.177
C--- 1.10 --- 0.043
D0.05 0.15 0.002 0.006
F0.50 0.70 0.020 0.028
G0.65 BSC 0.026 BSC
L6.40 BSC 0.252 BSC
M0 8 0 8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
6. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE -W-.
____
SEATING
PLANE
PIN 1
14
85
DETAIL E
B
C
D
A
G
L
2X L/2
−U−
S
U0.20 (0.008) TS
U
M
0.10 (0.004) V S
T
0.076 (0.003)
−T−
−V−
−W−
8x REFK
IDENT
K0.19 0.30 0.007 0.012
S
U0.20 (0.008) T
DETAIL E
F
M
0.25 (0.010)
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÇÇÇÇ
ÇÇÇÇ
K1
K
JJ1
SECTION N−N
J0.09 0.20 0.004 0.008
K1 0.19 0.25 0.007 0.010
J1 0.09 0.16 0.004 0.006
N
N
NCS20081/2/4, NCV20081/2/4
www.onsemi.com
19
PACKAGE DIMENSIONS
SOIC−14 NB
CASE 751A−03
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
H
14 8
71
M
0.25 B M
C
h
X 45
SEATING
PLANE
A1
A
M
_
S
A
M
0.25 B S
C
b
13X
B
A
E
D
e
DETAIL A
L
A3
DETAIL A
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
D8.55 8.75 0.337 0.344
E3.80 4.00 0.150 0.157
A1.35 1.75 0.054 0.068
b0.35 0.49 0.014 0.019
L0.40 1.25 0.016 0.049
e1.27 BSC 0.050 BSC
A3 0.19 0.25 0.008 0.010
A1 0.10 0.25 0.004 0.010
M0 7 0 7
H5.80 6.20 0.228 0.244
h0.25 0.50 0.010 0.019
__ __
6.50
14X
0.58
14X
1.18
1.27
DIMENSIONS: MILLIMETERS
1
PITCH
SOLDERING FOOTPRINT*
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
NCS20081/2/4, NCV20081/2/4
www.onsemi.com
20
PACKAGE DIMENSIONS
TSSOP−14
CASE 948G
ISSUE B
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A4.90 5.10 0.193 0.200
B4.30 4.50 0.169 0.177
C−−− 1.20 −−− 0.047
D0.05 0.15 0.002 0.006
F0.50 0.75 0.020 0.030
G0.65 BSC 0.026 BSC
H0.50 0.60 0.020 0.024
J0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L6.40 BSC 0.252 BSC
M0 8 0 8
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
____
S
U0.15 (0.006) T
2X L/2
S
U
M
0.10 (0.004) V S
T
L−U−
SEATING
PLANE
0.10 (0.004)
−T−
ÇÇÇ
ÇÇÇ
SECTION N−N
DETAIL E
JJ1
K
K1
ÉÉÉ
ÉÉÉ
DETAIL E
F
M
−W−
0.25 (0.010)
8
14
7
1
PIN 1
IDENT.
H
G
A
D
C
B
S
U0.15 (0.006) T
−V−
14X REFK
N
N
7.06
14X
0.36 14X
1.26
0.65
DIMENSIONS: MILLIMETERS
1
PITCH
SOLDERING FOOTPRINT
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