Si photodiodes S1336 series UV to near IR for precision photometry Features Applications High sensitivity in UV range Analytical instruments Low capacitance Optical measurement equipment High reliability Structure / Absolute maximum ratings Type no. S1336-18BQ S1336-18BK S1336-5BQ S1336-5BK S1336-44BQ S1336-44BK S1336-8BQ S1336-8BK Dimensional outline/ Window material* (1)/Q (2)/K (3)/Q (4)/K (5)/Q (6)/K (7)/Q (8)/K Package Photosensitive area size (mm) TO-18 Absolute maximum ratings Effective Operating Storage photosensitive Reverse voltage temperature temperature area VR max Topr Tstg 2 (V) (C) (C) (mm ) 1.1 x 1.1 1.2 2.4 x 2.4 5.7 3.6 x 3.6 13 5.8 x 5.8 33 -20 to +60 -40 to +100 -20 to +60 -40 to +100 -20 to +60 -40 to +100 -20 to +60 -40 to +100 5 TO-5 TO-8 -55 to +80 -55 to +125 -55 to +80 -55 to +125 -55 to +80 -55 to +125 -55 to +80 -55 to +125 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. * Window material K=borosilicate glass, Q=quartz glass Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Type no. Spectral Peak response sensitivity range wavelength p Photosensitivity S (A/W) S1336-18BQ S1336-18BK S1336-5BQ S1336-5BK S1336-44BQ S1336-44BK S1336-8BQ S1336-8BK (nm) 190 to 1100 320 to 1100 190 to 1100 320 to 1100 190 to 1100 320 to 1100 190 to 1100 320 to 1100 He-Ne laser 633 Min. Typ. Typ. nm (A) (A) 0.12 1 1.2 0.9 1.0 0.12 4 5 0.33 0.12 8 10 0.12 22 28 - 200 nm p (nm) Min. 960 0.10 0.10 0.5 0.10 0.10 - Short circuit current Isc 100 lx Terminal Dark Noise Temp. Rise time Shunt capacitance current coefficient tr resistance equivalent Ct ID power of ID VR=0 V Rsh VR=10 mV VR=0 V NEP TCID RL=1 k VR=10 mV max. f=10 kHz (times/C) Min. Typ. (G) (G) (W/Hz1/2) (s) (pF) 0.1 20 0.5 2 5.7 x 10-15 0.2 65 0.3 1 8.1 x 10-15 50 0.5 150 0.2 0.6 1.0 x 10-14 100 1 380 0.1 0.4 1.3 x 10-14 (pA) 20 30 1.15 www.hamamatsu.com 1 Si photodiodes S1336 series Photosensitivity temperature characteristic Spectral response (Typ. Ta =25 C) 0.7 Temperature coefficient (%/C) Photosensitivity (A/W) 0.6 0.5 0.4 0.3 S1336-BQ 0.2 (Typ. ) +1.5 +1.0 +0.5 0 0.1 S1336-BK 190 400 600 800 -0.5 190 1000 400 600 800 1000 Wavelength (nm) Wavelength (nm) KSPDB0098EA KSPDB0053EB Dark current vs. reverse voltage (Typ. Ta=25 C) 10 nA S1336-8BQ/BK Dark current 1 nA 100 pA 10 pA S1336-18BQ/BK S1336-44BQ/BK 1 pA 100 fA 0.01 S1336-5BQ/BK 0.1 1 10 Reverse voltage (V) KSPDB0100EA 2 Si photodiodes S1336 series Dimensional outlines (unit: mm) 5.4 0.2 X 4.7 0.1 Y 5.4 0.2 Window 3.0 0.1 Y Window 3.0 0.1 (2) S1336-18BK 4.7 0.1 (1) S1336-18BQ X Photosensitive area 1.1 x 1.1 Photosensitive area 1.1 x 1.1 Photosensitive surface 14 14 2.3 2.3 Photosensitive surface 3.6 0.2 Glass 3.6 0.2 Glass 0.45 Lead 0.45 Lead 2.54 0.2 2.54 0.2 Distance from photosensitive area center to cap center -0.3X+0.3 -0.3Y+0.3 Distance from photosensitive area center to cap center -0.3X+0.3 -0.3Y+0.3 Connected to case Connected to case The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0197EB X Photosensitive area 2.4 x 2.4 9.1 0.2 8.1 0.1 X 9.1 0.2 Y 8.1 0.1 Y Window 5.9 0.1 (4) S1336-5BK Window 5.9 0.1 (3) S1336-5BQ KSPDA0191EC Glass 0.45 Lead 20 20 2.8 2.8 Photosensitive surface 4.1 0.2 Glass Photosensitive surface 4.1 0.2 Photosensitive area 2.4 x 2.4 0.45 Lead 5.08 0.2 5.08 0.2 Connected to case Distance from photosensitive area center to cap center -0.3X+0.3 -0.3Y+0.3 Distance from photosensitive area center to cap center -0.3X+0.3 -0.3Y+0.3 Connected to case KSPDA0198EB The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0192EC 3 Si photodiodes S1336 series Photosensitive area 3.6 x 3.6 Photosensitive area 3.6 x 3.6 4.1 0.2 Glass 0.3 Glass Photosensitive surface 20 20 2.8 2.8 0.45 Lead 0.45 Lead 5.08 0.2 Connected to case 9.1 0.2 X 0.3 Photosensitive surface 8.1 0.1 X 4.1 0.2 8.1 0.1 Y 9.1 0.2 Y Window 5.9 0.1 (6) S1336-44BK Window 5.9 0.1 (5) S1336-44BQ 5.08 0.2 Distance from photosensitive area center to cap center -0.6X0 -0.3Y+0.3 Distance from photosensitive area center to cap center -0.6X0 -0.3Y+0.3 Connected to case KSPDA0199EB The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0194EC 4 Si photodiodes S1336 series X 13.9 0.2 12.35 0.1 X 13.9 0.2 Y 12.35 0.1 Y Window 10.5 0.1 (8) S1336-8BK Window 10.5 0.1 (7) S1336-8BQ Photosensitive area 5.8 x 5.8 ii 0.085 Photosensitive surface 15 15 1.8 1.8 Photosensitive surface Glass 5.0 0.2 Glass 5.0 0.2 Photosensitive area 5.8 x 5.8 0.45 Lead 0.45 Lead 7.5 0.2 7.5 0.2 Index mark ( 1.4) Index mark ( 1.4) Distance from photosensitive area center to cap center -0.315X+0.485 -0.4Y+0.4 Connected to case Distance from photosensitive area center to cap center -0.315X+0.485 -0.4Y+0.4 Connected to case KSPDA0200EB The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0193EC Information described in this material is current as of February, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1022E06 Feb. 2013 DN 5