SH Datenblatt / Data sheet Schnelle beschaltungslose Diode Fast Hard Drive Diode D 1131SH Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Periodische Ruckwarts-Spitzensperrspannung Kenndaten repetitive peak reverse voltages Durchlastrom-Grenzeffektivwert maximum RMS on-state current Tvj = 0C... Tvj max Elektrische Eigenschaften VRRM 6500 V IFRMSM 2230 A Dauergrenzstrom average on-state current TC = 85C, f=50Hz TC = 60C, f=50Hz IFAVM 1130 A 1420 A Stostrom-Grenzwert surge current Tvj = 25 C, tP = 10 ms Tvj = Tvj max, tP = 10 ms IFSM A 22000 A Grenzlastintegral It-value Tvj = 25 C, tP = 10 ms Tvj = Tvj max, tP = 10 ms It Max. Ausschaltverluste max. turn-off losses Tvj = Tvjmax IFM = 2500A, -di/dt = 1000A/s, VCL = 2800V, clamp circuit LS 0,25H, RCL = 68, DCL = 34DSH65, Wmax failure rate < 100 VR(D) Durchlaspannung on-state voltage Tvj = Tvj max , iF = 2500A Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Charakteristische Werte / Characteristic values Gleichsperrspannung continuous direct reverse voltage 1000A iF 2500A 10 As 2400 10 As 5 MW estimate value 3200 V vF typ. max. 5,2 V 5,6 V Tvj = Tvj max V(TO) typ. max. 1,98 V 2,19 V Tvj = Tvj max rT typ. max. 1,29 m 1,37 m Tvj = Tvj max typ. Spitzenwert der Durchlassverzogerungsspannung peak value of forward recovery voltage Tvj = Tvjmax, diF/dt = 5000A/s IFM = 4000A VFRM 0,701766 2,1127E-4 -0,078352 0,091681 0,700158 2,7932E-4 -0,044041 0,09125 typ. 360 V Sperrstrom reverse current Tvj = Tvj max, vR = VRRM iR max. 150 mA Qr max. 3500 As IRM max. 1300 A Eoff max. FRRS typ. Durchlakennlinie on-state characteristic v F = A + B i T + C Ln ( i T + 1) + D Sperrverzogerungsladung recovered charge Ruckstromspitze peak reverse recovery current Ausschaltverlust Energie turn-off energy Abklingsanftheit reverse recovery softness factor prepared by: C. Schneider approved by: R. Keller max. iT Tvj = Tvjmax IFM = 2500A, -di/dt = 1000A/s, VCL = 2800V, clamp circuit LS 0,25H, RCL = 68, DCL = 34DSH65, Tvj = Tvjmax IFM = 2500A, VR = 2800 V, dirr/dt(i=0) = 1000A/s, t = 200ns date of publication: revision: A B C D A B C D 8 Ws 1,6 2003-10-24 5 Seite/page 1/9 SH Datenblatt / Data sheet Schnelle beschaltungslose Diode Fast Hard Drive Diode D 1131SH Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand thermal resistance, junction to case Kuhlflache / cooling surface Ubergangs-Warmewiderstand thermal resistance, case to heatsink Kuhlflache / cooling surface beidseitig / two-sided einseitig / single-sided / two-sided, = 180sin Thermischebeidseitig Eigenschaften beidseitig / two-sided, DC / anode, DC MechanischeAnode Eigenschaften Kathode / cathode, DC RthJC RthCH Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj max Betriebstemperatur operating temperature Tc op Lagertemperatur storage temperature Tstg max. 0,00827 C/W max. 0,0075 C/W max. 0,0133 C/W max. 0,0172 C/W max. max. 0,0025 C/W 0,0050 C/W 140 C 0...+140 C -40...+150 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see annex Seite 3 page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact 76DSX65 Anpresskraft clamping force F Gewicht weight G 36...52 typ. kN 1350 g Kriechstrecke creepage distance 33 mm Luftstrecke air distance 17 mm Feuchteklasse humidity classification DIN 40040 Schwingfestigkeit vibration resistance f = 50 Hz C 50 m/s Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen technischen Erlauterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. Seite/page 2/9 SH Datenblatt / Data sheet Schnelle beschaltungslose Diode Fast Hard Drive Diode D 1131SH Mabild 1: Anode/Anode 1 2 2: Kathode/Cathode Seite/page 3/9 SH Datenblatt / Data sheet Schnelle beschaltungslose Diode Fast Hard Drive Diode D 1131SH Analytische Elemente des transienten Warmewiderstandes Z thJC Analytical elements of transient thermal impedance Z thJC R,t - Werte R Pos. n 1 2 3 4 5 Rthn [C/W] 0,00295 0,002 0,00154 0,00098 0,00003 n [s] 0,78008 0,13092 0,02165 0,00514 0,00104 Rthn [C/W] 0,00804 0,00081 0,00239 0,0016 0,00046 n [s] 5,11029 0,35916 0,09623 0,01197 0,00332 Rthn [C/W] 0,0121 0,0004 0,00244 0,00155 0,00071 n [s] 4,97289 0,48885 0,12071 0,01530 0,00427 R,T-Werte beidseitig two-sided anodenseitg anode-sided kathodenseitig cathode-sided ZthJC = Analytische Funktion / Analytical function: 6 nmax n=1 7 -t Rthn 1 - e n 0,03 0,025 0,02 0,015 a Zth JC [K/W] c 0,01 d 0,005 0,001 0,01 0,1 1 10 0 100 t [s] Transienter innerer Warmewiderstand fur DC/ Transient thermal impedance Z thJC = f(t) for DC Beidseitige Kuhlung / Two-sided cooling Anodenseitige Kuhlung / Anode-sided cooling Kathodenseitige Kuhlung / Cathode-sided cooling Seite/page 4/9 SH Datenblatt / Data sheet Schnelle beschaltungslose Diode Fast Hard Drive Diode D 1131SH 3000 Diagramme Diagramme Durchlasskennlinie 2500 2000 i F [V] typ. max. 1500 1000 500 0 0 1 2 3 4 5 6 7 vF [V] Grenzdurchlakennlinie / Limiting on-state characteristic iF = f(vF) Tvj = Tvj max Seite/page 5/9 SH Datenblatt / Data sheet Schnelle beschaltungslose Diode Fast Hard Drive Diode D 1131SH 4000 Tc beidseitig IFM=2500A 3500 3000 IFM=1000A Qr [As] 2500 2000 IFM=500A 1500 IFM=100A 1000 500 0 0 200 400 600 800 1000 1200 1400 -di/dt [A/s] Sperrverzogerungsladung / Recovered charge Qr = f(-di/dt) Tvj=Tvjmax, VCL = 2800V, clamp circuit LS 0,25H, RCL = 68CCL = 3F, DCL = 34DSH65 Seite/page 6/9 SH Datenblatt / Data sheet Schnelle beschaltungslose Diode Fast Hard Drive Diode D 1131SH 1600 1400 IFM=2500A 1200 IFM=1000A IFM=500A 1000 IRM [A] IFM=100A 800 600 400 200 0 0 200 400 600 800 1000 1200 1400 -di/dt [A/s] Ruckstromspitze / peak reverse recovery current IRM = f(-di/dt) Tvj=Tvjmax, VCL = 2800V, clamp circuit LS 0,25H, RCL = 68CCL = 3F, DCL = 34DSH65 Seite/page 7/9 SH Datenblatt / Data sheet Schnelle beschaltungslose Diode Fast Hard Drive Diode D 1131SH 9 IFM=2500A 8 7 IFM=1000A 6 Eoff [Ws] 5 IFM=500A 4 IFM=100A 3 2 1 0 0 200 400 600 800 1000 1200 1400 -di/dt [A/s] Ausschaltverlust Energie / turn-off energy Eoff = f(-di/dt) Tvj=Tvjmax, VCL = 2800V, clamp circuit LS 0,25H, RCL = 68CCL = 3F, DCL = 34DSH65 Seite/page 8/9 SH Datenblatt / Data sheet Schnelle beschaltungslose Diode Fast Hard Drive Diode D 1131SH 450 400 typ 350 300 V FRM [V] 250 200 150 100 50 0 0 1000 2000 3000 4000 5000 6000 diF/dt [A/s] Ta bei Sinus Spitzen-Durchlassverzogerungsspannung / peak forward recovery voltage VFRM = f(diF/dt) Tvj=Tvjmax, IFM = 4000A Seite/page 9/9 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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