NUP2125, SZNUP2125 ESD Protection Diode Dual Line CAN Bus Protector The SZ/NUP2125 has been designed to protect the CAN transceiver from ESD and other harmful transient voltage events. This device provides bidirectional protection for each data line with a single compact SC-70 (SOT-323) package, giving the system designer a low cost option for improving system reliability and meeting stringent EMI requirements. www.onsemi.com MARKING DIAGRAM Features * * * * * * * * * 200 W Peak Power Dissipation per Line (8/20 ms Waveform) Diode Capacitance Matching Low Reverse Leakage Current (< 100 nA) IEC Compatibility: - IEC 61000-4-2 (ESD): Level 4 - IEC 61000-4-4 (EFT): 50 A - 5/50 ns - IEC 61000-4-5 (Lighting) 3.0 A (8/20 ms) ISO 7637-1, Nonrepetitive EMI Surge Pulse 2, 8.0 A (1/50 ms) ISO 7637-3, Repetitive Electrical Fast Transient (EFT) EMI Surge Pulses, 50 A (5/50 ns) Flammability Rating UL 94 V-0 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These are Pb-Free Devices SC-70 CASE 419 25MG G 1 25 = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) PIN 1 PIN 3 PIN 2 CAN_H CAN Transceiver CAN_L CAN Bus Applications * Automotive Networks NUP2125 CAN / CAN-FD Low and High-Speed CAN Fault Tolerant CAN ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2015 October, 2018 - Rev. 5 1 Publication Order Number: NUP2125/D NUP2125, SZNUP2125 MAXIMUM RATINGS (TJ = 25C, unless otherwise specified) Symbol PPK Rating Peak Power Dissipation, 8 x 20 ms Double Exponential Waveform (Note 1) Value Unit 200 W TJ Operating Junction Temperature Range -55 to 150 C TJ Storage Temperature Range -55 to 150 C TL Lead Solder Temperature (10 s) 260 C Human Body Model (HBM) Machine Model (MM) IEC 61000-4-2 Contact IEC 61000-4-2 Air ISO 10605 150 pF / 2 kW Contact ISO 10605 330 pF / 2 kW Contact 8.0 1.6 30 30 30 30 kV kV kV kV kV kV ESD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non-repetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (TJ = 25C, unless otherwise specified) Symbol VRWM Parameter Test Conditions Min Typ Max Unit Reverse Working Voltage (Note 2) 24 - - V Breakdown Voltage IT = 1 mA (Note 3) 27 28.5 32 V IR Reverse Leakage Current VRWM = 24 V - 15 100 nA VC Clamping Voltage IPP = 1 A (8/20 ms Waveform) (Note 4) - 33.4 36.6 V VC Clamping Voltage IPP = 3 A (8/20 ms Waveform) (Note 4) - 44 50 V IPP Maximum Peak Pulse Current 8/20 ms Waveform (Note 4) - - 3.0 A CJ Capacitance VR = 0 V, f = 1 MHz (Line to GND) - 7.0 10 pF VR = 5 V, f = 1 MHz (Line to GND) - 4.5 6.0 pF VR = 5 V, f = 1 MHz (Line to GND), TA = +150C - 5.0 - pF VR = 0 V, 5 MHz (Note 5) - 0.26 2 % VBR DC Diode Capacitance Matching Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Pulse waveform per Figure 1. 5. DC is the percentage difference between CJ of lines 1 and 2 measured according to the test conditions given in the electrical characteristics table. ORDERING INFORMATION Device Package NUP2125WTT1G SZNUP2125WTT1G* NUP2125WTT3G Shipping 3000 / Tape & Reel SC-70 (Pb-Free) 10000 / Tape & Reel SZNUP2125WTT3G* For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. www.onsemi.com 2 NUP2125, SZNUP2125 TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) % OF PEAK PULSE CURRENT WAVEFORM PARAMETERS tr = 8 ms td = 20 ms 90 80 c-t 70 IPP, PEAK PULSE CURRENT (A) 3.5 110 100 60 td = IPP/2 50 40 30 20 10 0 0 10 5 20 15 2.5 2.0 1.5 1.0 0.5 0.0 30 30 25 3.0 35 Figure 2. Clamping Voltage vs Peak Pulse Current Figure 1. Pulse Waveform, 8 x 20 ms 50 9 45 40 125C 7 35 25C 6 IT, (mA) C, CAPACITANCE (pF) 8 5 30 25 20 15 4 25C 10 3 0 10 5 15 20 0 20 25 TA = -55C 22 24 26 28 30 32 34 VBR, VOLTAGE (V) Figure 4. VBR versus IT Characteristics Figure 3. Typical Junction Capacitance vs Reverse Voltage 120 25 -55C +25C TA = +150C 100 PERCENT DERATING (%) 20 15 10 5 0 65C 125C 5 VR, REVERSE VOLTAGE (V) VR, REVERSE BIAS VOLTAGE (V) 50 VC, CLAMPING VOLTAGE (V) t, TIME (ms) 2 45 40 0 1 2 3 IL, LEAKAGE CURRENT (nA) 4 80 60 40 20 0 -60 5 Figure 5. IR versus Temperature Characteristics -30 0 30 60 90 TEMPERATURE (C) 120 150 180 Figure 6. Temperature Power Dissipation Derating www.onsemi.com 3 NUP2125, SZNUP2125 Surge Protection Diode Circuit breakdown voltage of the diode that is reversed biased, plus the diode drop of the second diode that is forwarded biased. Surge protection diodes provide protection to a transceiver by clamping a surge voltage to a safe level. Surge protection diodes have high impedance below and low impedance above their breakdown voltage. A surge protection Zener diode has its junction optimized to absorb the high peak energy of a transient event, while a standard Zener diode is designed and specified to clamp a steady state voltage. Figure 7 provides an example of a dual bidirectional surge protection diode array that can be used for protection with the high-speed CAN network. The bidirectional array is created from four identical Zener TVS diodes. The clamping voltage of the composite device is equal to the CAN_H CAN Transceiver CAN_L CAN Bus NUP2125 Figure 7. High-Speed and Fault Tolerant CAN Surge Protection Circuit www.onsemi.com 4 NUP2125, SZNUP2125 PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419-04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) c A2 MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 11: PIN 1. CATHODE 2. CATHODE 3. CATHODE L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Honeywell and SDS are registered trademarks of Honeywell International Inc. DeviceNet is a trademark of Rockwell Automation. 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