AO4712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4712 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID =11.2A (VGS = 10V) RDS(ON) < 14.5m (VGS = 10V) RDS(ON) < 18m (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D D D D D S S S G SRFET G TM Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF TA=25C Maximum 30 Units V 12 V 11.2 A IDSM IDM 9.1 B IAR 16 A Repetitive avalanche energy L=0.3mH B EAR 38 mJ TA=70C Pulsed Drain Current B Avalanche Current TA=25C Power Dissipation 3.1 PDSM TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead 60 TJ, TSTG -55 to 150 Symbol t 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. W 2.0 RJA RJL Typ 32 60 17 C Max 40 75 24 Units C/W C/W C/W www.aosmd.com AO4712 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=1mA, VGS=0V VDS=30V, V GS=0V 30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= 12V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250A 1.5 VGS=10V, V DS=5V 60 10 0.1 24 VGS=4.5V, ID=10A 15 18 VDS=5V, ID=11.2A 64 Forward Transconductance VSD IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current TJ=125C Crss Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 1450 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, V DS=15V, ID=11.2A A V m m S 0.38 DYNAMIC PARAMETERS Ciss Input Capacitance mA A 19 gFS Rg 2.4 14.5 Static Drain-Source On-Resistance Output Capacitance 1.8 12 RDS(ON) Units V TJ=125C VGS=10V, ID=11.2A Coss Max 0.1 IDSS IS Typ 0.5 V 4.5 A 1885 pF 224 pF 92 130 pF 0.8 1.6 3.0 18 24.0 31 nC 9 12.0 16 nC 3.9 nC Qgd Gate Drain Charge 4.2 nC tD(on) Turn-On DelayTime 5.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=11.2A, dI/dt=300A/s 10 Qrr Body Diode Reverse Recovery Charge IF=11.2A, dI/dt=300A/s 6.8 VGS=10V, V DS=15V, R L=1.2, RGEN=3 4.7 ns 24.0 ns 4.0 ns 12 ns nC A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev2: Dec 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4712 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V 80 4.5V 4V 20 60 ID(A) ID (A) VDS=5V 25 6V 3.5V 40 15 10 20 5 VGS=3V 0 25C 0 0 DYNAMIC 1 2 3 4 1 5 1.5 VDS (Volts) PARAMETERS Figure 1: On-Region Characteristics 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 20 2 Normalized On-Resistance VGS=4.5V 17 RDS(ON) (m) 125 14 11 VGS=10V VGS=10V ID=11.2A 1.8 1.6 VGS=4.5V 1.4 ID=10A 1.2 1 8 0 5 10 15 20 25 0.8 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 90 120 150 180 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 45 1.0E+02 40 1.0E+01 ID=11.2A 35 125C 1.0E+00 30 IS (A) RDS(ON) (m) 30 125C 25 25C 1.0E-01 1.0E-02 20 1.0E-03 15 1.0E-04 10 25C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4712 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 2000 VDS=15V ID=11.2A 6 Capacitance (pF) VGS (Volts) 8 4 1500 1000 2 Crss 500 0 0 5 10 15 20 0 DYNAMIC PARAMETERS 100.0 1.0 10ms 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 DC TJ(Max)=150C TA=25C 80 100s TJ(Max)=150C TA=25C 0.1 10 90 70 Power (W) 1ms RDS(ON) limited 5 100 10s 10.0 Coss 0 25 Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) Ciss 60 50 40 30 20 10 0.0 0.1 1 10 100 VDS (Volts) 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.001 0.00001 0.0001 PD D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=40C/W 0.01 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4712 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1 0.9 1.0E-02 VDS=24V 0.7 1.0E-03 VSD(V) IR (A) 20A 0.8 VDS=12V 1.0E-04 0.6 0.5 10A 0.4 5A 0.3 1.0E-05 0.2 IS=1A 0.1 1.0E-06 0 100 150 200 Temperature (C) Figure 12: Diode Reverse Leakage Current vs. PARAMETERS Junction Temperature 25 125C Qrr (nC) 20 25C 15 Qrr 10 5 25C 5 10 15 20 10 10 8 8 25 2 0 0 5 Qrr 0 200 400 600 6 4 25C 2 800 0 1000 di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 125C 5 10 15 20 0 25 30 2.5 Is=20A 2 25C 125 Irm 0 0.5 125C trr (ns) 10 1 25C S 12 Irm (A) Qrr (nC) 25C 1.5 15 125C 15 25C Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 8 Is=20A 2 0 30 2.5 125C 6 2 10 20 di/dt=800A/us trr Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 3 4 4 0 0 12 6 125C Irm 12 100 150 200 Temperature (C) Figure 13: Diode Forward voltage vs. Junction Temperature 9 1.5 trr 6 25C 3 125C 1 200 0.5 S 0 0 S di/dt=800A/us 50 S 30 0 trr (ns) DYNAMIC 50 Irm (A) 0 400 600 800 0 1000 di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt www.aosmd.com