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©2009-2011 by RF Monolithics, Inc. XTC7009 - 12/12/11
Electrical Characteristics
Characteristic Sym Notes Minimum Typical Maximum Units
Nominal Frequency FO16.368000 MHz
Frequency Tolerance after Reflow ±2 ppm maximum @ 25 ±2 °C
Storage Temperature Range -40 +85 °C
Operating Temperature Range -30 +85 °C
Power Supply Voltage VDD 2.70 2.85 3.00 V
Output Voltage with 10 pF || 10 K Load 0.8 Vp-p
Output Waveform Clipped Sinewave
Power Supply Current IDD 2.0 mA
Frequency Stability versus:
Temperature, -30 to 85°C ±0.5 ppm
Load Variation, 10 pF || 10 K±10% ±0.2 ppm
Supply Voltage, 2.85 V ±5% ±0.2 ppm
Frequency Slope, one measurement every 2 °C ±0.05 ppm
Static Temperature Hysteresis ±0.6 ppm
Start Up Time, 90% of Final RF level in VP-P 2.0 ms
Harmonics -7.0 dBc
SSB Phase Noise @ 1 kHz Carrier Offset -130 dBc/Hz
Aging @ 25 °C ±1.0 ppm
Stanard Shipping Quantity on 180 mm (7”) Reel 1000 units
Lid Symbolization (in addition to Lot and/or Date Codes) Line1: 7009 Line2: YWWS
• Temperature Compensated Crystal Oscillator
• Miniature 3.2 x 2.5 mm SMD Package
• Excellent Frequency Stability
• Low Phase Noise
• Complies with Directive 2002/95/EC (RoHS)
16.368000 MHz
TCXO
XTC7009
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1. The design, manufacturing pr ocess, and specifications of this device are subject to change without notice.
Preliminary
4-Terminal SMD Case
Pin Connections
Connection Terminals
Ground 1
Ground 2
TCXO Output 3
VDD 4