IRFR9220, IRFU9220 S E M I C O N D U C T O R 3.6A, 200V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages * 3.6A, 200V JEDEC TO-251AA SOURCE DRAIN GATE * rDS(ON) = 1.500 * Temperature Compensating PSPICE Model * Peak Current vs Pulse Width Curve * UIS Rating Curve Description DRAIN (FLANGE) The IRFU9220 and IRFR9220 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement-mode silicon gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. JEDEC TO-252AA GATE DRAIN (FLANGE) SOURCE PACKAGE AVAILABILITY PART NUMBER PACKAGE Symbol BRAND IRFU9220 TO-251AA IF9220 IRFR9220 TO-252AA IF9220 D NOTE: When ordering use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, e.g., IRFR92209A. G Formerly developmental type TA17502. S Absolute Maximum Ratings TC = +25oC IRFU9220, IRFR9220 UNITS Drain Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS -200 V Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -200 V Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS 20 V Drain Current RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 3.6 Refer to Peak Current Curve A Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve Power Dissipation TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 0.33 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -55 to +150 oC Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1995 4-15 File Number 4015.1 Specifications IRFR9220, IRFU9220 Electrical Specifications PARAMETERS TC = +25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V -200 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250A -2.0 - -4.0 V TC = +25oC - - -1 A TC = +150oC - - -50 A VGS = 20V - - 100 nA Zero Gate Voltage Drain Current Gate-Source Leakage Current IDSS IGSS VDS = -200V, VGS = 0V On Resistance rDS(ON) ID = 2.2A, VGS = -10V - - 1.500 Turn-On Time tON VDD = -100V, ID = 3.9A RL = 24, VGS = -10V RGS = 18 - - 50 ns - 8.8 - ns tR - 27 - ns tD(OFF) - 7.3 - ns tF - 19 - ns Turn-Off Time tOFF - - 50 ns Total Gate Charge QG - 20 - nC Gate-to-Drain Charge QGD - 11 - nC Gate-to-Source Charge QGS - 3.3 - nC Input Capacitance CISS - 550 - pF Output Capacitance COSS - 110 - pF Reverse Transfer Capacitance CRSS - 33 - pF Thermal Resistance Junction to Case RJC - - 3.00 oC/W Thermal Resistance Junction to Ambient RJA - - 100 oC/W MIN TYP MAX UNITS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tD(ON) VGS = 0 to -10V VDD = -160V, ID = 3.9A, RL = 41 VDS = -25V, VGS = 0V f = 1MHz Source-Drain Diode Specifications PARAMETERS SYMBOL TEST CONDITIONS Forward Voltage VSD ISD = -3.6A - - -6.3 V Reverse Recovery Time tRR ISD = -3.6A, dISD/dt = -100A/s - 150 300 ns Reverse Recovery Charge QRR 0.97 2.0 C 4-16 IRFR9220, IRFU9220 Typical Performance Curves TC = +25oC 10 ZJC , THERMAL RESPONSE (oC/W) -20 ID , DRAIN CURRENT (A) -10 100s 1ms -1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) -0.1 -1 100ms DC VDSS MAX = -200V -10 -100 VDS , DRAIN-TO-SOURCE VOLTAGE (V) 0.5 1 0.2 0.1 .05 FIGURE 1. SAFE OPERATING AREA CURVE t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC SINGLE PULSE 0.01 10-5 -500 PDM 0.1 .02 .01 10-4 10-3 10-2 10-1 100 t, RECTANGULAR PULSE DURATION (s) FIGURE 2. MAXIMUM TRANSIENT THERMAL IMPEDANCE TC = +25oC IDM , PEAK CURRENT CAPABILITY (A) ID , DRAIN CURRENT (A) -4 -3 -2 -1 0 25 50 75 100 TC , CASE TEMPERATURE 125 -50 FOR TEMPERATURES ABOVE +25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: VGS = -20V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION ID(ON), ON STATE DRAIN CURRENT (A) VGS = -8V VGS = -10V -4 VGS = -7V VGS = -20V -3 VGS = -6V -2 -1 VGS = -5V VGS = -4.5V 0 0.0 -1.5 -3.0 -4.5 -6.0 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) 100 101 FIGURE 4. PEAK CURRENT CAPABILITY PULSE DURATION = 250s, TC = +25oC -5 150 - T C 25 ---------------------125 VGS = -10V -1 10-5 150 (oC) I = I -10 FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE ID, DRAIN CURRENT (A) 101 -7.5 -8 VDD = -15V PULSE TEST PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX -55oC -6 +25oC -4 -2 0 0.0 +150oC -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 VGS, GATE-TO-SOURCE VOLTAGE (V) VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS 4-17 -7.0 IRFR9220, IRFU9220 Typical Performance Curves (Continued) 1.5 1.0 0.5 -40 0 40 80 120 THRESHOLD VOLTAGE 2.0 1.5 1.0 0.5 0.0 160 -80 -40 TJ , JUNCTION TEMPERATURE (oC) 80 120 1.5 1.0 0.5 1.0 0.8 0.6 0.4 0.2 0.0 -40 0 40 80 120 160 0 25 50 75 100 125 FIGURE 10. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING CURVE -200 VGS = 0V, f = 1MHz VDS , DRAIN-SOURCE VOLTAGE (V) 700 VDD = BVDSS VDD = BVDSS CISS 500 RL = 51 IG(REF) = -1.45mA VGS = -10V -120 400 300 COSS 100 CRSS 0 -5 -10 -15 -20 VDS , DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE -80 0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 0.50 BVDSS 0.25 BVDSS -6.0 -4.0 -2.0 -40 0 -25 -10.0 -8.0 -160 600 0 150 TC , CASE TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE vs TEMPERATURE 200 160 1.2 ID = 250A 2.0 TJ , JUNCTION TEMPERATURE (oC) C, CAPACITANCE (pF) 40 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs TEMPERATURE POWER DISSIPATION MULTIPLIER BVDSS , NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE 0.0 -80 0 TJ , JUNCTION TEMPERATURE (oC) 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) 0.0 IG(ACT) FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT. REFER TO APPLICATION NOTES AN7254 AND AN7260 4-18 VGS , GATE-SOURCE VOLTAGE (V) 0.0 -80 VGS = VDS, ID = 250A 2.0 VGS(TH), NORMALIZED GATE rDS(ON), NORMALIZED ON RESISTANCE PULSE DURATION = 250s, VGS = -10V, ID = -3.9A 2.5 IRFR9220, IRFU9220 Typical Performance Curves (Continued) IAS , AVALANCHE CURRENT (A) -10 STARTING TJ = +25oC STARTING TJ = +150oC If R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] -1 0.01 0.1 1 tAV , TIME IN AVALANCHE (ms) 10 FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms VDS BVDSS tP VDS L IAS VARY tP TO OBTAIN VDD - RG REQUIRED PEAK IAS VDD + 0V DUT tP IL 0.01 -VGS tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON VDD tOFF tD(OFF) tD(ON) RL tR tF 10% 10% VDS VDS 0V 90% 90% VGS -VGS RGS 10% DUT 50% 50% PULSE WIDTH 90% FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 4-19 IRFR9220, IRFU9220 Temperature Compensated PSPICE Model for the IRFU9220, IRFR9220 .SUBCKT IRFU9220 2 1 3 REV 9/6/94 CA 12 8 723e-12 CB 15 14 733e-12 CIN 6 8 517e-12 RLDRAIN DBODY 5 7 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 6 DPLCAPMOD DPLCAP 5 DRAIN 2 10 LDRAIN EBREAK 7 11 17 18 -244.4 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 5 10 8 6 1 EVTO 20 6 8 18 1 RSCL2 ESG + IT 8 17 1 MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 1.194 RGATE 9 20 2.17 RIN 6 8 1e9 RLDRAIN 2 5 10 RLGATE 1 9 26.09 RLSOURCE 3 7 26.09 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 90.1e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD RLGATE RGATE GATE 1 DBREAK ESCL 50 6 8 RDRAIN - - 18 20 8 9 5 51 EVTO + LDRAIN 2 5 1e-9 LGATE 1 9 2.609e-9 LSOURCE 3 7 2.609e-9 RSCL1 + 51 16 VTO + 21 6 11 + EBREAK 17 18 MOS2 DBODY MOS1 LGATE RIN CIN RLSOURCE 8 RSOURCE 7 3 SOURCE LSOURCE S1A 12 S2A 13 8 S1B 14 13 13 15 17 RBREAK S2B 18 RVTO CB CA IT + 6 EGS 8 - + EDS - 14 5 8 19 - VBAT + VBAT 8 19 DC 1 VTO 21 6 -0.77 ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/4.6,6))} .MODEL DBDMOD D (IS=2.56e-14 RS=8.09e-2 TRS1=-2.45e-3 TRS2=-1.33e-5 CJO=4.21e-10 TT=1.17e-7) .MODEL DBKMOD D (RS=5.07 TRS1=-1.05e-3 TRS2=1.28e-5) .MODEL DPLCAPMOD D (CJO=170e-12 IS=1e-30 N=10) .MODEL MOSMOD PMOS (VTO=-3.58 KP=1.38 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL RBKMOD RES (TC1=1.1e-3 TC2=-2.73e-6) .MODEL RDSMOD RES (TC1=6.95e-3 TC2=2.23e-5) .MODEL RSCLMOD RES (TC1=2.40e-3 TC2=-1.5e-5) .MODEL RVTOMOD RES (TC1=-3.27e-3 TC2=-1.33e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=5.29 VOFF=3.29) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.29 VOFF=5.29) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.1 VOFF=-4.9) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4.9 VOFF=0.1) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley. 4-20