Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR12BM
APPLICATION
Automatic strobe flasher
•I
T (AV) .........................................................................12A
•V
DRM ..............................................................400V/600V
•I
GT ..........................................................................30mA
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
Voltage class Unit
V
V
V
V
V
MAXIMUM RATINGS
8
400
500
320
400
320
12
600
720
480
600
480
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180° conduction, Tc=91°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A2s
W
W
V
V
A
°C
°C
g
Ratings
18.8
12.0
360
544
5
0.5
6
10
2
–40 ~ +125
–40 ~ +125
1.5
10.5 MIN
OUTLINE DRAWING
Dimensions
in mm
TO-220C
1.5 MAX
4
1.3
TYPE
NAME
VOLTAGE
CLASS
∗
3
12
0.5
2.6
2.5 2.5
0.8
12.5 MIN 3.8 MAX
10.5
4.5
1
∗
Measurement
point of case
temperature
1
2
3
4
CATHODE
ANODE
GATE
ANODE
8.6
Feb.1999
10
0
23 5710
1
160
80
23 5710
2
44
240
320
400
120
40
200
280
360
0
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
c
= 25°C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
IRRM
IDRM
VTM
VGT
VGD
IGT
IH
Rth (j-c)
Rth (j-a)
Test conditions
Tj=125°C, VDRM applied
Tj=125°C, VDRM applied
Tc=25°C, ITM=40A
Tj=25°C, VD=6V, IT=1A
Tj=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, IT=1A
Tj=25°C, VD=12V
Junction to case
Junction to ambient
Unit
mA
mA
V
V
V
mA
mA
°C/W
Typ.
—
—
—
—
—
—
15
—
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Limits
Min.
—
—
—
—
0.2
—
—
—
—
Max.
2.0
2.0
1.6
1.5
—
30
—
1.2
70
PERFORMANCE CURVES
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10
0
5710
2
23 5710
3
23 5710
4
23
10
1
3
2
10
1
7
5
3
2
7
5
7
5
3
2
10
–1
V
FGM
= 6V
V
GT
= 1.5V
I
GT
= 30mA
P
GM
= 5W
V
GD
= 0.2V
I
FGM
= 2A
P
G(AV)
= 0.5W
16060–20–40 0 20 40 80 100120140
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
TYPICAL EXAMPLE
160
120
60
40
20
140
100
80
0160 4 8 12 142610
θ
360°
θ = 30°
60°
90° 180°
120°
RESISTIVE,
INDUCTIVE
LOADS
64
48
24
16
8
56
40
32
0320 816242841220
θ
360°
θ = 30°
60°
120°
90°
180°
RESISTIVE,
INDUCTIVE
LOADS
2310
0
5710
1
23 5710
2
23 5710
3
10
0
2310
–3
5710
–2
23 5710
–1
23 5710
0
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
JUNCTION TO AMBIENT
JUNCTION TO CASE
1.6
1.2
1.0
0.6
0.4
0120–40 –20 20 80
0.2
0.8
1.4
06040 100
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
TYPICAL
EXAMPLE
DISTRIBUTION
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE (V)
JUNCTION TEMPERATURE (°C)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
CASE TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE (°C/W)
TIME (s)
GATE CHARACTERISTICS
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER CURRENT (T
j
=t°C)
GATE TRIGGER CURRENT (T
j
=25°C)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
160
120
60
40
20
140
100
80
01.60 0.4 0.8 1.2 1.40.2 0.6 1.0
θ
360°
θ = 30°
60°
90°
180°
120° RESISTIVE,
INDUCTIVE
LOADS
64
48
24
16
8
56
40
32
0320 816242841220
θ = 30°
60°
90° 180°
θ θ
360°
120°
RESISTIVE LOADS
160
120
60
40
20
140
100
80
0320 816242841220
180°
θ θ
360°
60°
90°
120°
θ = 30°
RESISTIVE
LOADS
160
120
60
40
20
140
100
80
01.60 0.4 0.8 1.2 1.40.2 0.6 1.0
θ θ
360°
θ = 30°
60°
90°
180° 120°
RESISTIVE
LOADS
160
120
60
40
20
140
100
80
0320 816242841220
θ
360°
θ = 30° 180° DC
270°
90
°
120°60°
RESISTIVE,
INDUCTIVE
LOADS
64
48
24
16
8
56
40
32
0320 816242841220
θ = 30°60° 120°
90°
180°270°
DC
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
CASE TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
CASE TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10.0
7.0
3.0
2.0
1.0
8.0
9.0
6.0
4.0
5.0
01000 20 50 70 908010 30 40 60
#
T
a
= 25°C
V
D
= 100V
R
L
= 12Ω
TYPICAL
EXAMPLE
I
GT
(25°C)
# I
GT
= 11.2mA
2310
1
5710
2
23 5710
3
23 5710
4
160
0
80
100
120
140
40
60
20
#
T
j
= 125°C
TYPICAL
EXAMPLE
I
GT
(25°C)
# I
GT
= 10.1mA
200
140
60
40
20
160
180
120
80
100
0160–40 0 60 100 140120–20 20 40 80
TYPICAL EXAMPLE
16060–20–40 0 20 40 80 100120140
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
# 2
# 1
I
GT
(25°C)
# 1 10.6mA
# 2 11.6mA
TYPICAL EXAMPLE
200
140
60
40
20
160
180
120
80
100
0160–40 0 60 100 140120–20 20 40 80
TYPICAL EXAMPLE
160
120
60
40
20
140
100
80
01.60 0.4 0.8 1.2 1.40.2 0.6 1.0
θ = 30°
60°
180°
120°
90°
θ
360°
270°
DC
RESISTIVE,
INDUCTIVE
LOADS
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
AMBIENT TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25 °C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = vV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
TURN-ON TIME VS. GATE CURRENT
TURN-ON TIME (µs)
GATE CURRENT (mA)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
100 (%)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
=t°C)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
=25°C)
Feb.1999
800
600
500
300
100
020000 800 1200 1600
200
400
700
400
T
a
= 25°C
REPETITIVE
CYCLE
T > 5s
C
M
350V I
TM
10
2
2310
–1
5710
0
23 5710
1
23 5710
2
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
0.1s
tw
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
MAXIMUM ALLOWABLE PEAK ON-STATE
CURRENT VS.
DISCHARGE CAPACITOR
DISCHARGING CAPACITOR C
M
(µF)
PEAK ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
