QS043-402-20383 (2/5 140 130 110 43.8 10 13.8 11.5 4 - O6.5 (E2) 2 (C1) 3 7(G2) 6(E2) 7 3-M8 6 1 40 110 130 (C2E1) 1 14.5 20.5 10 36 3 2 65 4 14.5 5 5(E1) 4(G1) 24 35 4-M4 4 LABEL Dimension:mm ollector-mitter oltage ate-mitter oltage ollector ower issipation unction emperature ange torage emperature ange ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal , . .. . (kgfcm) ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 1200V,= 0V . = 20V,= 0V . ollector-mitter aturation oltage = 600A,= 15V . . ate-mitter hreshold oltage = 5V,= 600mA . . nput apacitance witching ime ise urn-on all urn-off ime ime ime ime = 10V,= 0V,= 1MH 37,800 = 600V L= 1.0 G= 2.7 = 15V . . . . . . . . orward urrent eak orward oltage everse ecovery ime . . . = 600A,= 0V . . = 600A,= -10V i/t= 1200A/s . . hermal mpedance iode th(j-c) Junction to Case . . . . . QS043-402-20383 (3/5 Fig.1- Output Characteristics (Typical) 12V VGE=20V T C=125C 1200 VGE=20V 11V 15V 10V 800 600 9V 400 8V 12V 11V 15V 1000 Collector Current I C (A) 1000 Collector Current I C (A) Fig.2- Output Characteristics (Typical) T C=25C 1200 10V 800 600 9V 400 200 8V 200 7V 7V 0 0 1 2 3 4 0 5 0 1 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 1200A 600A 12 10 8 6 4 2 0 4 8 12 16 600A 10 8 6 4 2 0 4 8 300000 14 100000 12 500 10 8 VCE =600V 6 400V 200 4 200V 100 0 0 1000 2000 3000 20 4000 VGE=0V f=1MHZ T C=25C Cies Capacitance C (pF) 600 300 16 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage V CE (V) RL =1.0( TC=25C 400 12 Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 700 1200A 12 0 20 IC=300A 14 Gate to Emitter Voltage VGE (V) 800 5 T C=125C 16 14 0 4 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) T C=25C IC=300A 3 Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 2 30000 10000 Coes 3000 1000 2 300 0 5000 100 Cres 0.1 Total Gate Charge Qg (nC) 0.2 0.5 1 2 5 10 20 Collector to Emitter Voltage VCE (V) 50 100 200 QS043-402-20383 (4/5 Fig.7- Collector Current vs. Switching Time (Typical) 2 1.2 tf 0.8 tr(V CE) 0 100 200 300 400 500 1 toff ton 0.3 tf tr (V CE) 0.1 tON 0.4 VCC=600V IC=600A VGE=15V T C=25C Resistive Load 3 Switching Time t (s) tOFF 0 5 VCC=600V RG=2.7 ( VGE=15V T C=25C Resistive Load 1.6 Switching Time t (s) Fig.8- Series Gate Impedance vs. Switching Time (Typical) 0.03 600 1 3 Collector Current IC (A) Fig.9- Collector Current vs. Switching Time Fig.10- Series Gate Impedance vs. Switching Time 10 VCC=600V RG=2.7 ( VGE=15V T C=125C Inductive Load 1 tf tON 0.3 tr(Ic) 0.1 2 1 toff 0.5 ton 0.2 tf 0.1 tr(IC ) 0.03 0.01 VCC=600V IC=600A VGE=15V T C=125C Inductive Load 5 Switching Time t (s) Switching Time t (s) tOFF 0.05 0 200 400 600 0.02 800 1 3 Collector Current IC (A) 10 30 Series Gate Impedance RG (( ) Fig.11- Collector Current vs. Switching Loss Fig.12- Series Gate Impedance vs. Switching Loss 250 1000 VCC=600V RG=2.7( VGE=15V T C=125C Inductive Load 200 Switching Loss ESW (mJ/Pulse) Switching Loss ESW (mJ/Pulse) 30 Series Gate Impedance RG (( ) 10 3 10 EON 150 100 EOFF ERR 50 0 VCC=600V IC=600A VGE=15V T C=125C Inductive Load 300 EON EOFF 100 ERR 30 10 0 200 400 600 800 1000 1 Collector Current IC (A) 3 10 Series Gate Impedance RG (() 30 QS043-402-20383 (5/5 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) Fig.14- Reverse Recovery Characteristics (Typical) 1000 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 1200 1000 T C=125C 800 600 400 200 0 1 2 3 trr 300 IRrM 100 30 4 0 600 1200 Forward Voltage VF (V) 1800 2400 -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area 2000 RG=2.7( , VGE=15V, T C=125C 1000 300 Collector Current I C (A) 0 100 30 10 3 1 0.3 0.1 0 200 400 600 800 1000 1200 1400 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 3x10 -1 Transient Thermal Impedance Rth (J-C) (C/W) Forward Current I F (A) T C=25C IF=600A T C=25C T C=125C FRD 1x10 -1 IGBT 3x10 -2 1x10 -2 3x10 -3 T C=25C 1x10 -3 1 Shot Pulse 3x10 -4 10 -5 10 -4 10 -3 10 -2 Time t (s) 10 -1 1 10 1 3000 3600