BT2172CPUBT1172CPUREBMUN TRAP
60S60SENILTUO EGAKCAP
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX
ICC 5121951219Am)langis on( tnerruC tiucriC
GP5.3202815.613111BdzHG 1 = f ,niaG rewoP
fUUpper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 100 MHz) GHz 2.7 2.9 2.2 2.6
ΔGPBdzHG 5.2 ot zHG 1.0 = f ,ssentalF niaG ±0.8 ±0.8
PO(SAT) Maximum Output Level, f = 1 GHz, PIN = 0 dBm dBm -2 +1 0 +3
65.45.65BdzHG 1 = f ,erugiF esioNFN
RLIN 2195202BdzHG 1 = f ,ssoL nruteR tupnI
RLOUT 3101219BdzHG 1 = f ,ssoL nruteR tuptuO
33820352BdzHG 1 = f ,noitalosILOSI
The UPC2711TB and UPC2712TB are Silicon MMIC
Wideband Amplifiers manufactured using NEC's 20 GHz fT
NESATTM III silicon bipolar process. These devices are de-
signed for use as buffer amps in DBS tuners. The UPC2711/
12TB are pin compatible and have comparable performance
as the larger UPC2711/12T, so they are suitable for use as a
replacement to help reduce system size. These IC's are
housed in a 6 pin super minimold or SOT-363 package.
Stringent quality assurance and test procedure ensure
the highest reliability and performance.
DESCRIPTION
ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5.0 V, ZL = ZS = 50 W)
UPC2711TB, UPC2712TB
5 V, SUPER MINIMOLD
SILICON MMIC WIDEBAND AMPLIFIER
FEATURES
• HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT- 363 package
• SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V
• WIDEBAND RESPONSE:
UPC2711TB: fu = 2.9 GHz TYP
UPC2712TB: fu = 2.6 GHz TYP
• POWER GAIN:
UPC2711TB: GP = 13 dB TYP
UPC2712TB: GP = 20 dB TYP
GAIN vs. FREQUENCY
Frequency, f (GHz)
)Bd( PG ,niaG
TYPICAL PERFORMANCE CURVES
25
20
15
10
50.5 1.0 1.5 2.0 2.5 3.0
UPC2712TB
UPC2711TB
BIPOLAR ANALOG INTEGRATED CIRCUITS
Date Published: June 22, 2005
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.