SEMITRANSTM 2N
Superfast NPT-IGBT
Modules
SKM 195GB063DN
SKM 195GAL063DN
SKM 195GAR063DN
Features
  
  
 
    
  ! !
"    #$ %

&  &%%& % '()
 ! 
* + % , (- !!
. ! !
  /0  !
  ! 10 
Typical Applications
  %  
! !   
-( , !,
2  # 
 
GB GAL GAR
Absolute Maximum Ratings 3 14 5(    %!
Symbol Conditions Values Units
IGBT
'() 600 '
(3 14 84 5( 140 /90 -
(:; 3 /  <00 -
') = 10 '
,>  ?):-? @  <0 &&& A /40 /14 5(
' -( / & 1400 '
Inverse diode
*3 14 80 5( 100 /<0 -
*:; 3 /  <00 -
*; 3 /0 B &B >3 /40 5( /<00 -
Characteristics 3 14 5(    %!
Symbol Conditions min. typ. max. Units
IGBT
') ') 3 '() (3 < - <4 44 64 '
() ') 3 0 '() 3 '() >3 14 /14 5( 01 06 -
'()? >3 14 /14 5( /04 / '
() ') 3 /4 ' >3 14 /14 5( 414 C D
'() (3 100 - ') 3 /4 '  , 1/ 1< 14 18 '
( ! % ! //1 *
( ') 3 0 '() 3 14 ' % 3 / ;"E /14 *
( 0C4 *
() 14 "
:((FA))F &  3 14 /14 5( 0C4 / D
! '(( 3 G00 ' (3 100 - /10 
: 3 :%% 38D>3 /14 5( 84 
!%% ') 3 = /4 ' <60 
%40 
) )%% //4 C4 H
Inverse diode
'*3 ')( *3 /40 -B ') 30'B>3 14 /14 5( /<4 /G4 /C '
'? >3 14 /14 5( 09 '
>3 14 /14 5( < 44 D
::; *3 100 -B >3 /14 5( C4 -
I !J! 3 -JK /G K(
) ') 3 ' H
Thermal characteristics
:>   0/G LJ.
:>M  , M! 0G LJ.
:  ! 004 LJ.
Mechanical data
; N ;6 G 4 
;  ;4 14 4 
/60
SKM 195GB063DN
1 14-06-2005 SEN © by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SKM 195GB063DN
2 14-06-2005 SEN © by SEMIKRON
Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zthp(j-c) = f (tp);D=tp/tc= tp*f
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp);D=tp/tc= tp*f
Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current
SKM 195GB063DN
3 14-06-2005 SEN © by SEMIKRON
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
File no. E 63 532 Dimensions in mm
( M 9G
 ( M 9G
- ( M 9< O M 9G
-: ( M 94 OM 9G
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKM 195GB063DN
4 14-06-2005 SEN © by SEMIKRON