SKM 195GB063DN 3 14 5( Absolute Maximum Ratings Symbol Conditions IGBT '() ( (:; ') ,> ' SEMITRANSTM 2N Superfast NPT-IGBT Modules SKM 195GB063DN SKM 195GAL063DN SKM 195GAR063DN Features ! ! " # $ % & & %%& % '() ! * + % , (- ! ! . ! ! /0 ! ! 10 Typical Applications % ! ! -( , !, 2 # 3 14 84 5( 3 / ?):-? @ Values Units 600 140 /90 <00 = 10 <0 &&& A /40 /14 ' ' 5( 1400 ' 100 /<0 <00 - /<00 - -( / & * *:; 3 14 80 5( 3 / *; 3 /0 B &B > 3 /40 5( 3 14 5( Characteristics Symbol Conditions IGBT min. ') () '()? () ') 3 '() ( 3 < ') 3 0 '() 3 '() > 3 14 /14 5( > 3 14 /14 5( ') 3 /4 ' > 3 14 /14 5( '() ( 3 100 - ') 3 /4 ' ( ( ( () ! % ! ') 3 0 '() 3 14 ' % 3 / ;"E :((FA))F & 3 14 /14 5( ! ! % '(( 3 G00 ' ( 3 100 : 3 : %% 3 8 D > 3 /14 5( ') 3 = /4 ' ) %% <4 , typ. max. % ! Units 44 01 / 04 / 4 14 C 64 06 ' ' D 1 / 1 < 1 4 1 8 ' 14 * * * " // 1 / 14 0 C4 ) %% 0 C4 / D /10 84 <60 40 // 4 C 4 H Inverse diode '* 3 ')( '? ::; I * 3 /40 -B ') 3 0 'B > 3 14 /14 5( > 3 14 /14 5( > 3 14 /14 5( * 3 100 -B > 3 /14 5( !J! 3 -JK ) ') 3 ' / <4 / G4 < C4 /G /C 09 44 ' ' D K( H Thermal characteristics :> :>M , M ! 0 /G 0G LJ. LJ. : ! 0 04 LJ. 4 4 /60 Mechanical data N ;6 ;4 1 % ! Inverse diode ; ; GB GAL G 14 GAR 14-06-2005 SEN (c) by SEMIKRON SKM 195GB063DN Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 14-06-2005 SEN (c) by SEMIKRON SKM 195GB063DN Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 14-06-2005 SEN (c) by SEMIKRON SKM 195GB063DN Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm ( M 9G - ( M 9< O M 9G -: ( M 94 OM 9G ( M 9G This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 14-06-2005 SEN (c) by SEMIKRON