1C3D08060G Rev. F
C3D08060G
Silicon Carbide Schottky Diode
Z-Rec® RectifieR
Features
• 600-VoltSchottkyRectier
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonVF
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
• AEC-Q101QualiedandPPAPCapable
Applications
• SwitchModePowerSupplies
• PowerFactorCorrection
-TypicalPFCPout:800W-1600W
• MotorDrives
-TypicalPower:3HP-4HP 
Package
TO-263-2 
PIN1
PIN2 CASE
Part Number Package Marking
C3D08060G TO-263-2 C3D08060
Maximum Ratings (TC=25˚Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 600 V
VRSM SurgePeakReverseVoltage 600 V
VDC DCBlockingVoltage 600 V
IFContinuousForwardCurrent
24
11
8
A
TC=25˚C
TC=135˚C
TC=152˚C
IFRM RepetitivePeakForwardSurgeCurrent 57
36 ATC=25˚C,tP =10ms,HalfSineWave,D=0.3
TC=110˚C,tP=10ms,HalfSineWave,D=0.3
IFSM Non-RepetitivePeakForwardSurgeCurrent 80
60 ATC=25˚C,tp=10mS,HalfSineWave,D=0.3
TC=110˚C,tP=10ms,HalfSineWave,D=0.3
IFSM Non-RepetitivePeakForwardSurgeCurrent 220 A TC=25˚C,tP =10µs,Pulse
Ptot PowerDissipation 107
46 WTC=25˚C
TC=110˚C
TJ,Tstg OperatingJunctionandStorageTemperature -55to
+175 ˚C
VRRM = 600 V
IF (TC=135˚C) =11A
Qc  = 21nC
2C3D08060G Rev. F
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.6
1.9
1.8
2.4 VIF = 8 A TJ=25°C
IF = 8 A TJ=175°C
IRReverseCurrent 10
20
50
200 μAVR = 600 V TJ=25°C
VR = 600 V TJ=175°C
QCTotalCapacitiveCharge 21 nC
VR=600V,IF = 8A
di/dt=500A/μs
TJ=25°C
C TotalCapacitance
441
39
33
pF
VR=0V,TJ=25°C,f=1MHz
VR=200V,TJ=25˚C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit
RθJC ThermalResistancefromJunctiontoCase 1.4 °C/W
Typical Performance
6
7
8
9
10
Forward Current (A)
Forward Characteristics
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5
I
F
Forward Current (A)
V
F
Forward Voltage (V)
60
70
80
90
100
Reverse Current (uA)
Reverse Characteristics
0
10
20
30
40
50
0 100 200 300 400 500 600 700 800 900 1000
I
R
Reverse Current (uA)
V
R
Reverse Voltage (V)
Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics
VR Reverse Voltage (V)
IR Reverse Current (μA)
TJ = 25°C
TJ = 75°C
TJ =125°C
TJ = 175°C
100
90
80
70
60
50
40
30
20
10
0
01002003004005006007008009001000
10
9
8
7
6
5
4
3
2
1
0
0.00.51.01.52.02.5
VF Forward Voltage (V)
IF Forward Current (A)
TJ = 25°C
TJ = 75°C
TJ =125°C
TJ = 175°C
3C3D08060G Rev. F
Figure3.CurrentDerating
0
10
20
30
40
50
60
25
50
75
100
150
175
I
F(PEAK)
Peak Forward Current (A)
TCCase Temperature (°C)
* Frequency > 1KHz
20% Duty*
30% Duty*
50% Duty*
70% Duty*
DC
Figure4.Capacitancevs.ReverseVoltage
Figure5.TransientThermalImpedance
Typical Performance
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Time (s)
Zth (°C/W)
450
400
350
300
250
200
150
100
50
0
1 101001000
C Capacitance (pF)
V
R
Reverse Voltage (V)
250
300
350
400
450
C Capacitance (pF)
Capacitance vs. Reverse Voltage
0
50
100
150
200
250
110 100 1000
C Capacitance (pF)
V
R
Reverse Voltage (V)
4C3D08060G Rev. F
Typical Performance
Figure6.PowerDerating
0
10
20
30
40
50
60
70
80
90
100
110
25 50 75 100 125 150 175
Power Dissipation (W)
T
C
Case Temperature (°C)
Diode Model
VT
RT
Diode Model CSD10060
Vf T = VT + If*RT
VT= 0.92 + (Tj * -1.35*10-3)
RT= 0.052 + (Tj * 0.29*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius
VfT = VT+If*RT
VT =0.93+(TJ*-9.3*10-4)
RT =0.058+(TJ*5.7*10-4)
5C3D08060G Rev. F
Recommended Solder Pad Layout
Part Number Package Marking
C3D08060G TO-263-2 C3D08060
TO-263-2
Note: Recommended soldering proles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
POS Inches Millimeters
Min Max Min Max
A0.17 0.18 4.32 4.57
A1 -0.01 -0.25
b 0.028 0.037 0.71 0.94
b2 0.045 0.055 1.15 1.4
c0.018 0.024 0.46 0.61
c2 0.048 0.055 1.22 1.4
D 0.35 0.37 8.89 9.4
D1 0.315 0.324 8.01 8.23
E0.395 0.405 10.04 10.28
E1 0.31 0.318 7.88 8.08
e0.1 BSC. 2.54 BSC.
L 0.58 0.62 14.73 15.75
L1 0.09 0.11 2.29 2.79
L2 0.045 0.055 1.15 1.39
L3 0.05 0.07 1.27 1.77
θ0° 8° 0° 8°
Package Dimensions
PackageTO-263-2
PIN1
PIN2 CASE
Note:
*Tab“M”maynotbepresent
M
66 C3D08060G Rev. F
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,orairtrafccontrolsystems.
Notes
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Cree, Inc.:
C3D08060G C3D08060G-TR