Document Number: 83645 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com
Rev. 1.6, 17-May-11 2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MCT6
Optocoupler, Phototransistor Output,
Dual Channel Vishay Semiconductors
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Rated forward current, DC 60 mA
Peak forward current, DC 1.0 μs pulse, 300 pps IFM 3.0 A
Power dissipation Pdiss 100 mW
Derate linearly from 25 °C 1.3 mW/°C
OUTPUT
Collector current IC30 mA
Collector emitter breakdown voltage BVCEO 30 V
Power dissipation Pdiss 150 mW
Derate linearly from 25 °C 2.0 mW/°C
COUPLER
Isolation test voltage VISO 5300 VRMS
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO M 1012
VIO = 500 V, Tamb = 100 °C RIO 1011
Creepage distance 7.0 mm
Clearance distance 7.0 mm
Total package dissipation Ptot 400 mW
Derate linearly from 25 °C 5.33 mW/°C
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Lead soldering time at 260 °C 10 s
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 20 mA VF1.25 1.50 V
Reverse current VR = 3.0 V IR0.1 10 μA
Junction capacitance VF = 0 V Cj25 pF
OUTPUT
Collector emitter breakdown voltage IC = 1.0 μA, IE = 10 μA BVCEO 30 65 V
Emitter collector breakdown voltage IC = 10 A, IE = 10 μA BVECO 7.0 10 V
Collector emitter leakage current VCE = 10 V ICEO 1.0 100 nA
Collector emitter capacitance VCE = 0 V CCE 8.0 pF
COUPLER
Saturation voltage, collector emitter IC = 2.0 mA, IF = 16 mA VCEsat 0.40 V
Capacitance (input to output) f = 1.0 MHz CIO 0.5 pF
Capacitance between channels f = 1.0 MHz 0.4 pF
Bandwidth IC = 2.0 mA, VCC = 10 V,
RL = 100 150 kHz