4U2795B
4654B–CELL–07/04
Electrical Characteristics
VS = 3 V, fLOi = 1 GHz, IF = 900 MHz, RF = 100 MHz, RP = ∞, system impedance Zo = 50 Ω, Tamb = 25°C, RT = 56 Ω
reference point pin 6, unless otherwise specified
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
1.1 Supply voltage range 1 VS2.7 5.5 V A
1.2 Supply Current VS = 2.7 V, RP = 10 kΩ1I
S913mAA
VS = 3.0 V, RP = ∞1I
S36.2mAA
1.3 Conversion Power Gain RL = 50 Ω, RT = ∞
RL = 50 Ω, RT = 56 Ω1PGC
PGC
9
4
dB
dB B
2 Operating Frequencies
2.1 RFi frequency 2 RFi10 2500 MHz D
2.2 LOi frequency 7 fLOi 50 2500 MHz D
2.3 IFo frequency 5 fIFo 50 2500 MHz D
3Isolation
3.1 LO spurious at RFi PiLO = -10 to 0 dBm 7, 2 ISLO-RF -30 dBm D
3.2 RFi to LOiPiRF = -25 dBm 2, 7 ISRF-LO 35 dB D
3.3 LO spurious at IFoPiLO = -10 to 0 dBm 5, 7 ISLO-IF -25 dBm D
3.4 IFo to LOi5, 7 ISIF-LO 30 dB D
4 Output (IF)
4.1 Output compression point 5 CPO-10 dBm D
5 Input (RF)
5.1 Input impedance 2 ZRFi 700||0.8 Ω||pF D
5.2 Input compression point 2 CPi-14 dBm D
5.3 3rd-order input
intercept point 2IIP3 -4 dBmD
6 Input (LO)
6.1 LO level 7 PiLO -6 dBm D
7 Voltage Standing Wave Ratio (VSWR)
7.1 Input LO 7 VSWRLOi < 2 D
7.2 Output IF 4 VSWRIFo < 2 D
8 Noise Performance
8.1 Noise figure PiLO = 0 dBm, RT = ∞NF 10 dB D
9 Power-down Mode
9.1 Supply current VPU < 0.5V
VPU = 0 V 1I
SPU < 5
30 µA
µA
B
B
10 Power-down Voltage
10.1 “Power ON” VS = 3.5 to 5.5 V
VS = 2.7 to 3.5 V 8VPON
VS -0.5
VS
VS + 0.5
VS + 0.5
V
V
D
D
10.2 “Power DOWN” 8 VPDN 1VD
10.3 Power-down current Power ON
Power DOWN 8IPON
IPDN
0.15
< 5 0.22 mA
µA
A
D
10.4 Settling time 5,8 tsPD < 30 µs D
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter