1N6376 - Microsemi Corporation

1500 WATT LOW CLAMPING FACTOR

TRANSIENT VOLTAGE SUPPRESSOR

Microsemi

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Page 1

3-31-2006 REVB

WWW.Microsemi .COM

SCOTTSDALE DIVISION

1N6373 thru 1N6389, e3

or MPTE-5 thru MPTE-45C, e3

1N6373 thru 1N6389, e3

MPTE-5 thru MPTE-45C, e3

DESCRIPTION APPEARANCE

This Transient Voltage Suppressor (TVS) series for 1N6373 thru 1N6389

are JEDEC registered selections for both unidirectional and bidirectional

devices. The 1N6373 thru 1N6381 are unidirectional and the 1N6382 thru

1N6389 are bi-directional where they all provide a very low specified

clamping factor for minimal clamping voltages (VC) above their respective

breakdown voltages (VBR) as specified herein. They are most often used

in protecting sensitive components from inductive switching transients or

induced secondary lightning effects as found in lower surge levels of

IEC61000-4-5 . They are also very successful in protecting airborne

avionics and electrical systems. Since their response time is virtually

instantaneous, they can also protect from ESD and EFT per IEC61000-4-2

and IEC61000-4-4.

CASE 1

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES APPLIC ATIONS / BENEFITS

• Unidirectional and bidirectional TVS series for thru-hole

mounting

• Suppresses transients up to 1500 watts @ 10/1000 µs

• t

clamping (0 volts to V(BR) min):

Unidirectional – Less than 100 pico seconds.

Bidirectional – Less than 5 nano seconds.

• Working voltage (VWM) range 5 V to 45 V

• Low clamping factor (ratio of actual VC/VBR): 1.33 @ full

rated power and 1.20 @ 50% rated power

• Economical plastic encapsulated TVS for thru-hole mount

• Options for screening in accordance with MIL-PRF-19500

for JAN, JANTX, JANTXV, and JANS are also available

by adding MQ, MX, MV, MSP prefixes respectively to

part numbers, e.g. MX1N6373, etc.

• Surface mount equivalent packages also available as

SMCJ6373 – SMCJ6389 (consult factory for other

surface mount options)

• RoHS Compliant devices available by adding “e3” suffix

• Metal package axial-leaded equivalents available in the

1N6373 – 1N6389 series (see separate data sheet)

• Designed to protect Bipolar and MOS

Microprocessor based systems.

• Protection from switching transients and induced RF

• ESD & EFT protection per IEC 61000-4-2 and -4-4

• Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

Class 1, 2 & 3 1N6356 to 1N6372

Class 4: 1N6356 to 1N6362

• Secondary lightning protection per IEC61000-4-5

with 12 Ohms source impedance:

Class 1 & 2: 1N6356 to 1N6372

Class 3: 1N6356 to 1N6362

Class 4: 1N6356 to 1N6358

• Secondary lightning protection per IEC61000-4-5

with 2 Ohms source impedance:

Class 2: 1N6356 to 1N6361

Class 3: 1N6356 to 1N6358

MAXIMUM RAT ING S MECHANICAL AND PACKAGING

• 1500 Watts for 10/1000 μs with repetition rate of 0.01% or

less* at lead temperature (TL) 25oC (See Figs. 1, 2, & 4)

• Operating & Storage Temperatures: -65o to +150oC

• Thermal Resistance: 22ºC/W junction to lead at 3/8 inch

(10 mm) from body, or 82ºC/W junction to ambient when

mounted on FR4 PC board with 4 mm2 copper pads (1oz)

and track width 1 mm, length 25 mm

• Steady-State Power dissipation*: 5 watts at TL < 40oC, or

1.52 watts at TA = 25ºC when mounted on FR4 PC board

described for thermal resistance

• Solder Temperatures: 260 o C for 10 s (maximum)

• CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

• FINISH: Tin-Lead or RoHS Compliant annealed-

matte Tin plating solderable per MIL-STD-750

method 2026

• POLARITY: Cathode indicated by band

• MARKING: Part number and polarity diode symbol

• WEIGHT: 1.5 grams. (Approx)

• TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

• See “CASE 1” package dimension on last page

* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage

(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).

1500 WATT LOW CLAMPING FACTOR

TRANSIENT VOLTAGE SUPPRESSOR

WWW.Microsemi .COM

SCOTTSDALE DIVISION

1N6373 thru 1N6389, e3

or MPTE-5 thru MPTE-45C, e3

1N6373 thru 1N6389, e3

MPTE-5 thru MPTE-45C

ELECTRICAL CHARACTERISTICS @ 25oC (Unidirectional)

MICROSEMI

PART NUMBER

STAND-OFF

VOLTAGE

(NOTE 1)

VWM

VOLTS

MAXIMUM

REVERSE

LEAKAGE

@VWM

μA

MINIMUM*

BREAKDOWN

VOLTAGE

@ 1.0 mA

V(BR) (min)

VOLTS

MAXIMUM

CLAMPING

VOLTAGE

(Fig. 2)

IPP1 = 1A

VOLTS

MAXIMUM

CLAMPING

VOLTAGE

(Fig. 2)

@ IPP2 = 10A

VOLTS

MAXIMUM

PEAK PULSE

CURRENT

IPP3

1N6373

1N6374

1N6375

1N6376

1N6377

MPTE-5

MPTE-8

MPTE-10

MPTE-12

MPTE-15

5.0

8.0

10.0

12.0

15.0

300

6.0

9.4

11.7

14.1

17.6

7.1

11.3

13.7

16.1

20.1

7.5

11.5

14.1

16.5

20.6

160

100

1N6378

1N6379

1N6380

1N6381

MPTE-18

MPTE-22

MPTE-36

MPTE-45

18.0

22.0

36.0

45.0

21.2

25.9

42.4

52.9

24.2

29.8

50.6

63.3

25.2

32.0

54.3

70.0

VF at 100 amps peak, 8.3 msec sine wave equals 3.5 volts maximum.

ELECTRICAL CHARACTERISTICS @ 25oC (Bidirectional)

1N6382

1N6383

1N6384

1N6385

MPTE-5C

MPTE-8C

MPTE-10C

MPTE-12C

MPTE-15C

5.0

8.0

10.0

12.0

15.0

300

6.0

9.4

11.7

14.1

17.6

7.1

11.4

14.1

16.7

20.8

7.5

11.6

14.5

17.1

21.4

160

100

1N6386

1N6387

1N6388

1N6389

MPTE-18C

MPTE-22C

MPTE-36C

MPTE-45C

18.0

22.0

36.0

45.0

21.2

25.9

42.4

52.9

24.8

30.8

50.6

63.3

25.5

32.0

54.3

70.0

C Suffix indicates Bidirectional

NOTE 1: TVS devices are normally selected according to the reverse “Stand Off Voltage” (VWM) which should be equal to or greater than the dc or

continuous peak operating voltage level.

* The minimum breakdown voltage as shown takes into consideration the +1 volt tolerance normally specified for power supply regulation on

most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated

power supply voltages are employed.

GRAPHS

, e3

FIGURE 1 FIGURE 2

Peak Pulse Power vs. Pulse Time Typical Characteristic Clamping Voltage

vs. Peak Pulse Current

Microsemi

Scottsdale Division

Page 2

3-31-2006 REVB

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1500 WATT LOW CLAMPING FACTOR

TRANSIENT VOLTAGE SUPPRESSOR

WWW.Microsemi .COM

SCOTTSDALE DIVISION

1N6373 thru 1N6389, e3

or MPTE-5 thru MPTE-45C, e3

1N6373 thru 1N6389, e3

MPTE-5 thru MPTE-45C, e3

Pulse current (IP) in percent of IPP

Peak Value

IPP

time (t) in milliseconds FIGURE 4

FIGURE 3 Typical Capacitance vs. Breakdown Voltage

Pulse wave form for exponential surge (Unidirectional Types)

Microsemi

Scottsdale Division

Page 3

3-31-2006 REVB

PACKAGE DIMEN SIONS

FIGURE 5

Typical Capacitance vs. Breakdown Voltage

(Bidirectional Types)

CASE 1

Pulse time duration (tp) is

defined as that point where

IP decays to 50% of peak

value (IPP).

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503