© 2004 IXYS All rights reserved 1 - 3
MCC 200
MCD 200
IXYS reserves the right to change limits, test conditions and dimensions
448
ITRMS = 2x340 A
ITAVM = 2x196 A
VRRM = 1400-1800 V
VRSM VRRM Type
VDSM VDRM
VV
1500 1400 MCC 200-14io1 MCD 200-14io1
1700 1600 MCC 200-16io1 MCD 200-16io1
1900 1800 MCC 200-18io1 MCD 200-18io1
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
Features
•International standard package
•Direct copper bonded Al2O3 -ceramic
base plate
•Planar passivated chips
•Isolation voltage 3600 V~
•UL registered, E 72873
•Keyed gate/cathode twin pins
Applications
•Motor control
•Power converter
•Heat and temperature control for
industrial furnaces and chemical
processes
•Lighting control
•Contactless switches
Advantages
•Space and weight savings
•Simple mounting
•Improved temperature and power
cycling
•Reduced protection circuits
Symbol Conditions Maximum Ratings
ITRMS / IFRMS TVJ = TVJM 340 A
ITAVM / IFAVM TC = 90°C; 180° sine 196 A
TC = 85°C; 180° sine 216 A
ITSM / IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 8000 A
VR = 0 t = 8.3 ms (60 Hz), sine 8600 A
TVJ = TVJM t = 10 ms (50 Hz), sine 7000 A
VR = 0 t = 8.3 ms (60 Hz), sine 7500 A
∫∫
∫∫
∫i2dt TVJ = 45°C; t = 10 ms (50 Hz), sine 320 000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 311 000 A2s
TVJ = TVJM; t = 10 ms (50 Hz), sine 245 000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 236 000 A2s
(di/dt)cr TVJ = TVJM; repetitive; IT = 500 A 100 A/µs
f = 50Hz; tP = 200µs;
VD = 2/3 VDRM;
IG = 0.5 A; non repetitive; IT = 500 A 500 A/µs
diG/dt = 0.5 A/µs
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM; tP = 30 µs 120 W
IT = ITAVM; tP = 500 µs 60 W
PGAV 20 W
VRGM 10 V
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS; t = 1 min 3000 V~
IISOL ≤ 1 mA; t = 1 s 3600 V~
MdMounting torque (M6) 2.25-2.75/20-25 Nm/lb.in.
Terminal connection torque (M6) 4.5-5.5/40-48 Nm/lb.in.
Weight Typical including screws 125 g
Thyristor Modules
1
2
367
54
3671 542
31542
MCC
MCD
© 2004 IXYS All rights reserved 2 - 3
MCC 200
MCD 200
IXYS reserves the right to change limits, test conditions and dimensions
448
6
5
4
3
1
IG
tgd
V
VG
IG
10-3 10-2 10-1 100101102
0.1
1
10
1
10
100
2
0.01 0.1 1 10
A
IGD, TVJ = 130°C
A
VT, VF
IT, IF
0.00.40.81.21.62.0
0
100
200
300
400
500
V
A
TVJ = 25°C
TVJ = 125°C
3: IGT, TVJ = -40°C
2: IGT, TVJ = 25°C
1: IGT, TVJ = 125°C
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
µs
typ. limit
TVJ = 25°C
Symbol Conditions Characteristic Values
IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM 15 mA
VT / VFIT, IF = 200 A; TVJ = 25°C 1.20 V
VT0 For power-loss calculations only (TVJ = 125°C) 0.8 V
rT1.0 mΩ
VGT VD = 6 V; TVJ = 25°C 2 V
TVJ = -40°C 3 V
IGT VD = 6 V; TVJ = 25°C 150 mA
TVJ = -40°C 220 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM 0.25 V
IGD 10 mA
ILTVJ = 25°C; tP = 30 µs; VD = 6 V 200 mA
IG = 0.5 A; diG/dt = 0.5 A/µs
IHTVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA
tgd TVJ = 25°C; VD = ½ VDRM 2µs
IG = 0.5 A; diG/dt = 0.5 A/µs
tqTVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs typ. 200 µs
VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM
QSTVJ = TVJM; IT = 300 A, -di/dt = 50 A/µs 550 µC
IRM 235 A
RthJC per thyristor; DC current 0.13 K/W
per module 0.065 K/W
RthJH per thyristor; DC current 0.18 K/W
per module 0.09 K/W
dSCreepage distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMaximum allowable acceleration 50 m/s2
Dimensions in mm
(1 mm = 0.0394")
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385,
Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
Fig. 3 Forward current versus
voltage drop
© 2004 IXYS All rights reserved 3 - 3
MCC 200
MCD 200
IXYS reserves the right to change limits, test conditions and dimensions
448
I2dt
TC
t
110
104
105
106
A2s
0 25 50 75 100 125 150
0
100
200
300
400
ITSM
IFSM
A
A
C
ITAVM
IFAVM
s
TVJ = 45°C
ms
t
s
t
ZthJC
K/W
TVJ = 125°C
0.001 0.01 0.1 1
0
2000
4000
6000
8000
80 % VRRM
TVJ = 45°C
50 Hz
TVJ = 125°C 180° sin
120°
60°
30°
DC
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0 25 50 75 100 125 150
0 200 400 600
0
300
600
900
1200
1500
1800
2100
W
Ptot
A
IdAVM TA
C
0 25 50 75 100 125 150
0 100 200 300
0
100
200
300
400
W
Ptot
A
ITRMS/IFRMS TA
C
RthKA K/W
0.1
0.2
0.3
0.4
0.6
0.8
1.0
180° sin
120°
60°
30°
DC
Circuit
B6
0.03
0.04
0.06
0.08
0.1
0.15
0.2
RthKA K/W
120°
180°
DC
60°
30°
Fig. 7 Power dissipation versus on-state current and
ambient temperature (per thyristor or diode)
Fig. 4 Surge overload current
ITSM / FSM: Crest value, t: duration
Fig. 5 Ι2dt versus time (1-10 ms) Fig. 6 Maximum forward current
at case temperature
Fig. 9 Transient thermal impedance junction to case at various condition angles (per thyristor or diode)
Constants for ZthJC calculation (DC):
iR
thi (K/W) ti (s)
1 0.01 0.00014
2 0.0065 0.019
3 0.025 0.18
4 0.0615 0.52
5 0.027 1.6
Fig. 8 3~ rectifier bridge: Power dissipation versus
direct output current and ambient temperature
