© 2011 IXYS CORPORATION, All Rights Reserved DS99920B(03/11)
VDSS = 1000V
ID25 = 12A
RDS(on) ≤≤
≤≤
≤ 1.05ΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C12A
IDM TC= 25°C, Pulse Width Limited by TJM 24 A
IAR TC= 25°C6A
EAS TC= 25°C 750 mJ
dv/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 15 V/ns
PDTC= 25°C 463 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS220) 11..65/2.5..14.6 N/lb.
Weight TO-247 6 g
PLUS220 types 4 g
IXFH12N100P
IXFV12N100P
IXFV12N100PS
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 1000 V
VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V
IGSS VGS = ± 30V, VDS = 0V ± 100 nA
IDSS VDS = VDSS, VGS = 0V 20 μA
TJ = 125°C 1.0 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 1.05 Ω
PolarTM HiPerFETTM
Power MOSFETs
Features
zLow RDS(on) and QG
zAvalanche Rated
zLow Package Inductance
zFast Intrinsic Rectifier
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
PLUS220 (IXFV)
GDSD (Tab)
PLUS220SMD (IXFV_S)
G
S
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
D (Tab)
G
S
D
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH12N100P IXFV12N100P
IXFV12N100PS
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 4.8 8.8 S
RGi Gate Input Resistance 1.9 Ω
Ciss 4080 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 246 pF
Crss 40 pF
td(on) 30 ns
tr 25 ns
td(off) 60 ns
tf 36 ns
Qg(on) 80 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 24 nC
Qgd 35 nC
RthJC 0.27 °C/W
RthCS (TO-247&PLUS220) 0.25 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 12 A
ISM Repetitive, Pulse Width Limited by TJM 48 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 0.8 μC
IRM 7.9 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IF = 6A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
PLUS220 Outline
PLUS220SMD Outline
e
∅ P
TO-247 Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
© 2011 IXYS CORPORATION, All Rights Reserved
IXFH12N100P IXFV12N100P
IXFV12N100PS
Fi g . 1. Ou tp u t C h ar acteri sti cs @ T
J
= 25ºC
0
2
4
6
8
10
12
0123456789101112
V
DS
- V olts
I
D
- Amperes
V
GS
= 10V
8V
5V
7V
6V
Fi g . 2. Extend ed Ou tp u t C har acter i sti cs @ T
J
= 25ºC
0
4
8
12
16
20
24
0 5 10 15 20 25 30
V
DS
- V olts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fi g . 3. Ou tp u t C h ar acteri sti cs @ T
J
= 125ºC
0
2
4
6
8
10
12
0 5 10 15 20 25 30
V
DS
- Vo lts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 6A Value vs.
Junction T em perature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 12A
I
D
= 6A
Fig. 5. R
DS(on)
Norm alized to I
D
= 6A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0 2 4 6 8 1012141618202224
I
D
- Ampere s
R
DS(on)
- Normalized
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maxim um Drain Current vs.
Case Temper atu r e
0
2
4
6
8
10
12
14
-50 -25 0 25 50 75 100 125 150
T
C
- Deg rees Cen tigrade
I
D
- Ampere s
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH12N100P IXFV12N100P
IXFV12N100PS
IXYS REF: F_12N100P(75-744)4-01-08-A
Fig. 7. Input Admittance
0
2
4
6
8
10
12
14
16
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Vo lts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
16
18
0 2 4 6 8 10 12 14 16 18
I
D
- Amperes
g
f s - Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
5
10
15
20
25
30
35
40
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Volt s
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090100110
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 500V
I
D
= 6A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- V olts
Capacitance - PicoFara ds
f
= 1 MHz
Ciss
Crss
Coss
Fig . 12. Maximu m Tr an s i ent Th ermal I mped an c e
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
