2014-01-09
Page 1
Rev 2.0 BSL307SP
OptiMOS
-P Small-Signal-Transistor Product Summary
VDS -30 V
RDS
(
on
)
43 mΩ
ID-5.5 A
Feature
• P-Channel
• Enhancement mode
• Logic Level
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
PG-TSOP-6-1
5
6
4
1
3
2
Gate
pin 3
Drain
pin 1,2,
Source
pin 4
5,6
Marking
sPC
Type
Package
Tape and reel
BSL307SP
PG-TSOP-6-1 H6327: 3000pcs/r.
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
-5.5
-4.4
A
Pulsed drain current
T
A
=25°C
I
D puls
-22
Avalanche energy, single pulse
I
D
=-5.5 A , V
DD
=-25V, R
GS
=25Ω
E
AS
44
mJ
Reverse diode dv/dt
I
S
=-5.5A, V
DS
=24V, di/dt=200A/µs, T
jmax
=150°C
dv/dt
-6
kV/µs
Gate source voltage
VGS
±20
V
Power dissipation
T
A
=25°C
Ptot
2
W
Operating and storage temperature
T
j
, Tst
g
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
•QualifiedaccordingtoAECQ101
ESD Class
Class 1a
•HalogenfreeaccordingtoIEC61249221
2014-01-09
Page 2
Rev 2.0 BSL307SP
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point RthJS - - 50 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJA
-
-
-
-
230
62.5
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=-250µA
V(BR)DSS -30 - - V
Gate threshold voltage, VGS = VDS
ID=-40µA
VGS(th) -1 -1.5 -2
Zero gate voltage drain current
VDS=-30V, VGS=0, Tj=25°C
VDS=-30V, VGS=0, Tj=150°C
IDSS
-
-
-0.1
-10
-1
-100
µA
Gate-source leakage current
VGS=-20V, VDS=0
IGSS - -10 -100 nA
Drain-source on-state resistance
VGS=-4.5V, ID=-4.2A
RDS(on) - 52 74 mΩ
Drain-source on-state resistance
VGS=-10V, ID=-5.5A
RDS(on) - 31 43
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t ≤ 5 sec.
2014-01-09
Page 3
Rev 2.0 BSL307SP
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs çVDSç≥2*çIDç*RDS(on)max
ID=-4.4A
4.7 9.4 - S
Input capacitance Ciss VGS=0, VDS=-25V,
f=1MHz
- 805 - pF
Output capacitance Coss - 234 -
Reverse transfer capacitance Crss - 195 -
Turn-on delay time td
(
on
)
VDD=-15V, VGS=-10V,
ID=-1A, RG=6Ω
- 7.3 11 ns
Rise time tr- 8.4 12.6
Turn-off delay time td
(
off
)
- 36.4 55
Fall time tf- 29 44
Gate Charge Characteristics
Gate to source charge Q
g
sVDD=-24V, ID=-5.5A - -2 -2.5 nC
Gate to drain charge Q
g
d- -8.2 -12.3
Gate charge total QgVDD=-24V, ID=-5.5A,
VGS=0 to -10V
- -23.4 -29
Gate plateau voltage V
(p
lateau
)
VDD=-24V, ID=-5.5A - -2.8 - V
Reverse Diode
Inverse diode continuous
forward current ISTA=25°C - - -5.5 A
Inverse diode direct current,
pulsed ISM - - -22
Inverse diode forward voltage VSD VGS=0, |IF| = |ID|- -0.88 -1.3 V
Reverse recovery time trr VR=-15V, |IF| = |lD|,
diF/dt=100A/µs
- 16.6 21 ns
Reverse recovery charge Qrr - 6.2 7.8 nC
2014-01-09
Page 4
Rev 2.0 BSL307SP
1 Power dissipation
Ptot = f (TA)
0 20 40 60 80 100 120 °C 160
TA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
W
2.2 BSL307SP
Ptot
2 Drain current
ID = f (TA)
parameter: |VGS|≥ 10 V
0 20 40 60 80 100 120 °C 160
TA
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
-4.5
-5
A
-6 BSL307SP
ID
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
-10 -1 -10 0 -10 1 -10 2
VVDS
-2
-10
-1
-10
0
-10
1
-10
2
-10
A
BSL307SP
ID
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
100 µs
tp = 90.0µs
4 Transient thermal impedance
ZthJS = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W BSL307SP
ZthJS
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
2014-01-09
Page 5
Rev 2.0 BSL307SP
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
012345678V10
- VDS
0
10
20
30
A
50
- ID
Vgs = -4V
Vgs = -3V
Vgs = -3.5V
Vgs = -4.5V
Vgs = -5V
Vgs = -5.5V
Vgs = -6V
Vgs = -7V
Vgs = -8V
Vgs = -10V
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
0 5 10 15 20 25 30 35 40 A50
- ID
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
Ω
0.1
RDS(on)
Vgs = -3.5V Vgs = -4.5V
Vgs = -4V
Vgs= - 3V
Vgs = - 3.5V
Vgs = - 4.5V
Vgs= - 6V
Vgs = - 10V
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: tp = 80 µs
0 1 2 3 V5
- VGS
0
4
8
12
A
20
- ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: tp = 80 µs
0 5 10 A20
- ID
0
2.5
5
7.5
10
S
15
gfs
2014-01-09
Page 6
Rev 2.0 BSL307SP
9 Drain-source on-resistance
RDS(on) = f(Tj)
parameter: ID = -5.5 A, VGS = -10 V
-60 -20 20 60 100 °C 160
Tj
20
25
30
35
40
45
50
mΩ
60
RDS(on)
typ.
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
-60 -20 20 60 100 °C 160
Tj
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
2.4
- VGS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz
0 5 10 15 20 V30
- VDS
2
10
3
10
4
10
pF
C
Crss
Coss
Ciss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: T
j
, tp = 80 µs
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V-3
VSD
-1
-10
0
-10
1
-10
2
-10
A
BSL307SP
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
2014-01-09
Page 7
Rev 2.0 BSL307SP
13 Typ. avalanche energy
EAS = f (Tj), par.: ID = -5.5 A
VDD = -25 V, RGS = 25 Ω
25 50 75 100 °C 150
Tj
0
5
10
15
20
25
30
35
mJ
45
EAS
14 Typ. gate charge
|VGS| = f (QGate)
parameter: ID = -5.5 A pulsed
0 5 10 15 20 25 nC 35
|QGate|
0
2
4
6
8
10
12
14
V
18
- VGS
0.2 VDS max.
0.5 VDS max.
0.8 VDS max.
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-60 -20 20 60 100 °C 180
Tj
-27
-28
-29
-30
-31
-32
-33
-34
V
-36
V(BR)DSS
Package Outline:
Footprint: Packaging:
Dimensions in mm
TSOP6
GPX09300
1.6
±0.1
±0.1
2.5
±0.1
0.25
1.1 MAX.
0.1 MAX.
(2.25)
+0.1
-0.05
0.35
(0.35)
10
˚
MAX.
10
˚
MAX.
2.9
±0.2
B
0.2
M
B6x
0.95
1.9
A
0.2 A
M
0.15+0.1
-0.06
321
456
0.5
0.95
1.9
2.9
HLG09283
Remark: Wave soldering possible dep.
on customers process conditions
2.7
4
3.15
Pin 1
marking CPWG5899
8
0.2
1.15
2014-01-09
Page8
Rev 2.0 BSL307SP
BSS308PE
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
2014-01-09
Page9
Rev 2.0 BSL307SP