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Jun 20, 2012
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NESG2101M05
NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW)
Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
FEATURES
•The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-
gain amplification
PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, ICq = 10 mA, f = 2 GHz
NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz
•Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz
•High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
•Flat-lead 4-pin thin-type super minimold (M05) package
ORDERING INFORMATION
Part Number Order Number Package Quantity Supplying Form
scp 05 A-50M1012GSEN 50M1012GSEN
(Non reel)
NESG2101M05-T1 NESG2101M05-T1-A
Flat-lead 4-pin thin-type
supper minimold
(M05, 2012 PKG)
(Pb-Free) 3 kpcs/reel
•8 mm wide embossed taping
•Pin 3 (Collector), Pin 4
(Emitter) face the perforation
side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 13.0 V
Collector to Emitter Voltage VCEO 5.0 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 100 mA
Total Power Dissipation Ptot
Note 500 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg−65 to +150 °C
Note: Mounted on 38 cm2× 0.4 mm (t) polyimide PCB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
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R09DS0036EJ0300
Rev. 3.00
Jun 20, 2012
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