A Business Partner of Renesas Electronics Corporation. NESG2101M05 Data Sheet NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW) Flat-Lead 4-Pin Thin-Type Super Minimold (M05) * * * ORDERING INFORMATION Part Number NESG2101M05 Order Number Package NESG2101M05-A NESG2101M05-T1 NESG2101M05-T1-A 50 pcs (Non reel) * 8 mm wide embossed taping 3 kpcs/reel * Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Symbol VCBO VCEO VEBO IC Ptot Note Tj Tstg SC O Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Note: Supplying Form NT Remark Flat-lead 4-pin thin-type supper minimold (M05, 2012 PKG) (Pb-Free) Quantity Ratings 13.0 5.0 1.5 100 500 150 -65 to +150 Unit V V V mA mW C C Mounted on 38 cm2 x 0.4 mm (t) polyimide PCB DI <R> The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, ICq = 10 mA, f = 2 GHz NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V Flat-lead 4-pin thin-type super minimold (M05) package IN U * ED FEATURES R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 1 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 ELECTRICAL CHARACTERISTICS (TA = +25C) Symbol MIN. TYP. MAX. Unit VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 2 V, IC = 5 mA - - 130 - - 190 100 100 260 nA nA - 14 11.5 - 17 13.5 0.9 - - 1.2 GHz dB dB - 0.6 - dB 11.0 13.0 - dB - 19.0 - dB Cre Note 2 MSG Note 3 PO (1 dB) VCE = 3 V, IC = 50 mA, f = 2 GHz VCE = 3 V, IC = 50 mA, f = 2 GHz VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt VCB = 2 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 50 mA, f = 2 GHz VCE = 3.6 V, ICq = 10 mA, f = 2 GHz - 14.5 - 0.4 17.0 21 0.5 - - pF dB dBm GL VCE = 3.6 V, ICq = 10 mA, f = 2 GHz - 15 - dB ICBO IEBO hFE Note 1 fT S21e NF Noise Figure (2) NF Associated Gain (1) Ga Associated Gain (2) Ga Reverse Transfer Capacitance Maximum Stable Power Gain Gain 1 dB Compression Output Power Linear Gain 2 Test Conditions ED Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure (1) IN U <R> 3. MSG = S21 S12 hFE CLASSIFICATION FB/YFB T1J 130 to 260 SC O Rank Marking hFE Value DI <R> NT Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 2 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) 500 400 300 200 100 50 75 100 125 Ambient Temperature TA (C) 100 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 1 V 0.1 0.01 0.001 0.5 0.6 0.7 0.8 0.9 1.0 4 6 8 VCE = 2 V 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 3 V 1 0.1 0.01 0.001 0.5 0.6 0.7 0.8 0.9 10 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Base to Emitter Voltage VBE (V) 10 0.0001 0.4 2 Base to Emitter Voltage VBE (V) DI Collector Current IC (mA) 100 0.2 100 SC O 0.0001 0.4 0.4 NT 1 0.6 Collector to Base Voltage VCB (V) Collector Current IC (mA) 10 0.8 0 150 f = 1 MHz IN U 25 1.0 ED Reverse Transfer Capacitance Cre (pF) Mounted on Polyimide PCB (38 x 38 mm, t = 0.4 mm) 600 0 Collector Current IC (mA) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 1.0 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Total Power Dissipation Ptot (mW) 700 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.0 VCE = 4 V 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) Remark The graph indicates nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 3 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current IC (mA) 90 30 500 A 450 A 400 A 350 A 300 A 250 A 200 A 150 A 20 100 A 80 70 60 50 40 10 0 ED 100 IB = 50 A 1 2 3 4 6 5 100 1 10 1 10 100 Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 10 100 Collector Current IC (mA) 1 000 DC Current Gain hFE VCE = 3 V 100 10 0.1 VCE = 2 V Collector Current IC (mA) DI DC Current Gain hFE 1 000 DC CURRENT GAIN vs. COLLECTOR CURRENT 100 10 0.1 100 SC O 10 0.1 1 000 DC Current Gain hFE VCE = 1 V NT DC Current Gain hFE 1 000 DC CURRENT GAIN vs. COLLECTOR CURRENT IN U Collector to Emitter Voltage VCE (V) VCE = 4 V 100 10 0.1 1 10 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 4 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 20 15 10 5 0 1 10 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 2 V f = 2 GHz 15 10 ED VCE = 1 V f = 2 GHz Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) 20 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 5 0 1 100 10 Collector Current IC (mA) 15 10 5 0 1 10 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT IN U 20 Gain Bandwidth Product fT (GHz) VCE = 3 V f = 2 GHz Collector Current IC (mA) VCE = 4 V f = 2 GHz 15 10 NT Gain Bandwidth Product fT (GHz) 20 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 100 100 Collector Current IC (mA) 5 0 1 10 100 Collector Current IC (mA) DI SC O Remark The graph indicates nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 5 of 13 A Business Partner of Renesas Electronics Corporation. 35 30 VCE = 1 V IC = 50 mA MSG MAG 25 20 15 10 |S21e|2 5 0 0.1 1 10 100 40 35 30 15 10 5 0 0.1 VCE = 3 V IC = 50 mA MAG 25 20 15 10 |S21e|2 5 0 0.1 1 10 |S21e|2 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY IN U INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG MAG Frequency f (GHz) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 MSG 20 40 35 30 100 Frequency f (GHz) MSG VCE = 4 V IC = 50 mA MAG 25 20 15 NT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 VCE = 2 V IC = 50 mA 25 Frequency f (GHz) 40 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY ED 40 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) NESG2101M05 10 |S21e|2 5 0 0.1 1 10 100 Frequency f (GHz) DI SC O Remark The graph indicates nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 6 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 25 VCE = 1 V f = 1 GHz MSG MAG 20 15 |S21e|2 10 5 0 1 10 100 30 25 VCE = 2 V f = 1 GHz 20 |S21e|2 15 10 5 0 1 IN U 20 MSG MAG 15 10 0 1 10 100 25 VCE = 2 V f = 2 GHz 20 MSG MAG 15 10 |S21e|2 5 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 15 MSG VCE = 1 V f = 3 GHz MAG 10 5 |S21e|2 0 -5 1 DI -10 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 NT |S21e|2 5 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) VCE = 1 V f = 2 GHz SC O Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 10 Collector Current IC (mA) Collector Current IC (mA) 30 MAG MSG ED 30 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 15 MSG VCE = 2 V f = 3 GHz MAG 10 |S21e|2 5 0 -5 -10 1 10 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 7 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 25 VCE = 3 V f = 1 GHz MAG MSG 20 |S21e|2 15 10 5 0 1 10 100 30 25 VCE = 4 V f = 1 GHz 20 |S21e|2 15 10 5 0 1 IN U 20 MSG MAG 15 10 0 1 10 100 25 VCE = 4 V f = 2 GHz 20 MSG MAG 15 10 |S21e|2 5 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 15 MSG VCE = 3 V f = 3 GHz MAG 10 2 |S21e| 5 0 -5 1 DI -10 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 NT |S21e|2 5 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) VCE = 3 V f = 2 GHz SC O Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 10 Collector Current IC (mA) Collector Current IC (mA) 30 MAG MSG ED 30 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 15 MSG VCE = 4 V f = 3 GHz MAG 10 |S21e|2 5 0 -5 -10 1 10 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 8 of 13 A Business Partner of Renesas Electronics Corporation. Pout 15 60 IC 10 40 C 20 5 0 -20 -15 -10 -5 0 5 0 10 25 20 120 VCE = 3.6 V, f = 3 GHz Icq = 10 mA 100 15 10 80 GP 60 Pout 5 IC 0 -5 -15 40 20 C -10 -5 0 80 Pout 10 5 10 60 IC 5 40 C 20 0 -5 -15 -10 -5 0 5 10 0 15 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 25 20 120 VCE = 3.6 V, f = 5.2 GHz Icq = 10 mA 100 15 10 Pout 60 GP 5 -5 40 IC 0 -5 -10 80 20 C 0 5 10 Input Power Pin (dBm) 15 0 20 SC O Input Power Pin (dBm) 0 15 Input Power Pin (dBm) IN U OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 100 GP 15 NT Output Power Pout (dBm), Power Gain GP (dB) Input Power Pin (dBm) 20 120 VCE = 3.6 V, f = 2 GHz Icq = 10 mA Collector Current IC (mA), Collector Efficiency C (%) 80 25 Collector Current IC (mA), Collector Efficiency C (%) GP 20 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER ED 100 Output Power Pout (dBm), Power Gain GP (dB) 25 120 VCE = 3.6 V, f = 1 GHz Icq = 10 mA Output Power Pout (dBm), Power Gain GP (dB) 30 Collector Current IC (mA), Collector Efficiency C (%) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER Collector Current IC (mA), Collector Efficiency C (%) Output Power Pout (dBm), Power Gain GP (dB) NESG2101M05 DI Remark The graph indicates nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 9 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 20 4 3 15 2 10 1 5 1 10 0 100 3 15 2 10 5 1 0 NF 1 10 Collector Current IC (mA) 1 5 NF 1 0 100 10 3 2 1 0 1 10 5 NF 0 100 10 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT SC O NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 15 Ga 2 1 NF 1 10 10 5 4 0 100 Collector Current IC (mA) Noise Figure NF (dB) VCE = 1 V f = 3 GHz VCE = 2 V f = 3 GHz 20 15 3 Ga 2 1 0 20 15 Ga Collector Current IC (mA) 3 0 VCE = 2 V f = 2 GHz Collector Current IC (mA) DI Noise Figure NF (dB) 4 4 NT 10 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT IN U 15 Ga 2 0 20 Noise Figure NF (dB) VCE = 1 V f = 2 GHz Associated Gain Ga (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 3 0 100 Collector Current IC (mA) Associated Gain Ga (dB) Noise Figure NF (dB) 4 20 NF 1 Associated Gain Ga (dB) NF Ga 25 10 10 5 Associated Gain Ga (dB) 0 VCE = 2 V f = 1 GHz Associated Gain Ga (dB) Ga 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT ED 4 25 Noise Figure NF (dB) VCE = 1 V f = 1 GHz Associated Gain Ga (dB) Noise Figure NF (dB) 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 10 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 20 4 3 15 2 10 1 5 10 0 100 3 15 2 10 5 1 0 NF 1 10 Collector Current IC (mA) 15 2 5 NF 1 10 0 100 2 1 0 1 10 5 NF 0 100 10 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 15 Ga 2 10 1 NF 1 10 5 0 100 Collector Current IC (mA) 4 Noise Figure NF (dB) VCE = 3 V f = 3 GHz 20 15 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 3 0 Ga 3 Collector Current IC (mA) DI Noise Figure NF (dB) 4 VCE = 4 V f = 2 GHz Collector Current IC (mA) SC O 0 4 NT 10 1 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT IN U Ga 20 Noise Figure NF (dB) VCE = 3 V f = 2 GHz Associated Gain Ga (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 3 0 100 Collector Current IC (mA) Associated Gain Ga (dB) Noise Figure NF (dB) 4 20 VCE = 4 V f = 3 GHz 20 15 3 Ga 2 10 1 0 NF 1 Associated Gain Ga (dB) NF 1 Ga 25 10 5 Associated Gain Ga (dB) 0 VCE = 4 V f = 1 GHz Associated Gain Ga (dB) Ga 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT ED 4 25 Noise Figure NF (dB) VCE = 3 V f = 1 GHz Associated Gain Ga (dB) Noise Figure NF (dB) 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 11 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] [RF Devices] [Device Parameters] SC O NT IN U ED URL http://www.renesas.com/products/microwave/ DI <R> R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 12 of 13 A Business Partner of Renesas Electronics Corporation. NESG2101M05 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) (UNIT: mm) (Top View) (Bottom View) 2.050.1 IN U 1 4 0.30+0.1 -0.05 T1J 2 (1.05) 3 (0.65) 0.65 1.30 2.00.1 ED 1.250.1 0.590.05 0.11+0.1 -0.05 0.5 NT PIN CONNENTION 1. Base 2. Emitter 3. Collector 4. Emitter SC O Remark ( ) : Reference value DI <R> R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 Page 13 of 13 Revision History NESG2101M05 Data Sheet Description - 3.00 Date Mar 2003 Jun 20, 2012 Page - p.1 p.2 DI SC O NT IN U p.12 p.13 Summary Previous No. : PU10190EJ02V0DS Modification of ORDERING INFORMATION Modification of ELECTRICAL CHARACTERISTICS Modification of hFE CLASSIFICATION Modification of S-PARAMETERS Modification of PACKAGE DIMENSIONS ED Rev. All trademarks and registered trademarks are the property of their respective owners. C-1 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: CEL: NESG2101M05-A