AP10N70R-A - Advanced Power Electronics Corp. USA

Advanced Power N-CHANNEL ENHANCEMENT MODE

Electronics Corp. POWER MOSFET

▼ 100% Avalanche Test BVDSS 650V

▼ Fast Switching Characteristic RDS(ON) 0.62Ω

▼ Simple Drive Requirement ID10A

Description

Absolute Maximum Ratings

Symbol Units

VDS Drain-Source Voltage V

VGS Gate-Source Voltage V

ID@TC=25℃Continuous Drain Current, VGS @ 10V A

ID@TC=100℃Continuous Drain Current, VGS @ 10V A

IDM Pulsed Drain Current1A

PD@TC=25℃Total Power Dissipation W

W/℃

EAS Single Pulse Avalanche Energy2mJ

IAR Avalanche Current A

TSTG ℃

TJOperating Junction Temperature Range ℃

Thermal Data

Symbol Value Unit

Rthj-c Maximum Thermal Resistance, Junction-case 0.72 ℃/W

Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W

Data & specifications subject to change without notice

174

6.8

1.39

-55 to 150

AP10N70R/P-A

+30

Rating

650

RoHS-compliant Product

Parameter

Linear Derating Factor

Parameter

Storage Temperature Range -55 to 150

200811035

GDSTO-262(R)

GDSTO-220(P)

The TO-220 and TO-262 package is widely preferred for commercial-

industrial applications. The device is suited for switch mode power supplies,

DC-AC converters and high current high speed switching circuits.

P10N70 series are specially designed as main switching devices for

universal 90~265VAC off-line AC/DC converter applications. Both TO-220

and TO-262 type provide high blocking voltage to overcome voltage surge

and sag in the toughest power system with the best combination of fast

switching, ruggedized design and cost-effectiveness.

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1.0mA 650 - - V

RDS(ON) Static Drain-Source On-Resistance3VGS=10V, ID=5.0A - - 0.62 Ω

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V

gfs Forward Transconductance VDS=10V, ID=5A - 16 - S

IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA

Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA

IGSS Gate-Source Leakage VGS= + 30V - - +100 nA

QgTotal Gate Charge3ID=10A - 36 58 nC

Qgs Gate-Source Charge VDS=480V - 8.3 - nC

Qgd Gate-Drain ("Miller") Charge VGS=10V - 11.5 - nC

td(on) Turn-on Delay Time3VDD=300V - 15 - ns

trRise Time ID=10A - 20 - ns

td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 52 - ns

tfFall Time RD=30Ω-23-ns

Ciss Input Capacitance VGS=0V - 1950 3120 pF

Coss Output Capacitance VDS=15V - 630 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 20 - pF

RgGate Resistance f=1.0MHz - 2 3 Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage3IS=10A, VGS=0V - - 1.5 V

trr Reverse Recovery Time3IS=10A, VGS=0V, - 575 - ns

Qrr Reverse Recovery Charge dI/dt=100A/µs - 10.6 - uC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25Ω , IAS=10A.

3.Pulse test

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

AP10N70R/P-A

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance

Temperature v.s. Junction Temperature

5. Forward Characteristic o

Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

AP10N70P/R-A

0.8

0.9

1.1

1.2

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized BVDSS (V)

0 5 10 15 20

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TC=25oC10V

6.0V

5.0V

4.5V

VG=4.0V

25 50 75 100 125 150

Tj , Junction Temperature ( oC )

Normalized RDS(ON)

ID=5A

VG=10V

0 10203040

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TC=150oC10V

6.0V

5.0V

4.5V

VG=4.0V

0.1

0 0.2 0.4 0.6 0.8 1 1.2

VSD , Source-to-Drain Voltage (V)

IS (A)

Tj = 150oCT

j = 25oC

0.5

1.5

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

AP10N70P/R-A

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

t , Pulse Width (s)

Normalized Th e rmal Re spon se (Rthjc)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.1

100

1 10 100 1000

VDS , Drain-to-Source Voltage (V)

ID (A)

Tc=25oC

Single Pulse 1S

100us

1ms

10ms

100ms

0 204060

QG , Total Gate Charge (nC)

VGS , Gate to Sourc e Voltage ( V)

ID=10A

VDS =320V

V DS =400V

V DS =480V

1000

2000

3000

4000

1 5 9 13 17 21 25 29

VDS , Drain-to-Source Voltage (V)

C (pF)

=1.0MH

Ciss

Coss

Crss

td(on) trtd(off)tf

VDS

VGS

10%

90%

10V

QGS QGD

Charge