High Performance,
Digital Output Gyroscope
Data Sheet ADXRS450
Rev. C Document Feedback
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FEATURES
Complete rate gyroscope on a single chip
±300°/sec angular rate sensing
High vibration rejection over a wide frequency range
Excellent 25°/hour null offset stability
2000 g powered shock survivability
SPI digital output with 16-bit data-word
Low noise and low power
3.3 V and 5 V operation
−40°C to +105°C operation
Ultrasmall, light, and RoHS compliant
Two package options
Low cost SOIC_CAV package for yaw rate (Z-axis) response
Innovative ceramic vertical mount package, which can be
oriented for pitch, roll, or yaw response
APPLICATIONS
Rotation sensing medical applications
Rotation sensing industrial and instrumentation
High performance platform stabilization
GENERAL DESCRIPTION
The ADXRS450 is an angular rate sensor (gyroscope) intended
for industrial, medical, instrumentation, stabilization, and other
high performance applications. An advanced, differential, quad
sensor design rejects the influence of linear acceleration, enabling
the ADXRS450 to operate in exceedingly harsh environments
where shock and vibration are present.
The ADXRS450 uses an internal, continuous self-test archi-
tecture. The integrity of the electromechanical system is checked
by applying a high frequency electrostatic force to the sense
structure to generate a rate signal that can be differentiated from
the baseband rate data and internally analyzed.
The ADXRS450 is capable of sensing angular rate of up to
±300°/sec. Angular rate data is presented as a 16-bit word, as
part of a 32-bit SPI message.
The ADXRS450 is available in a cavity plastic 16-lead SOIC
(SOIC_CAV) and an SMT-compatible vertical mount package
(LCC_V), and is capable of operating across both a wide voltage
range (3.3 V to 5 V) and temperature range (−40°C to +105°C).
FUNCTIONAL BLOCK DIAGRAM
SPI
INTERFACE MISO
MOSI
SCLK
CS
HIG H VO L T AGE
GENERATION
EEPROM
PSS
CP5
AVSS
V
X
LDO
REGULATOR
PDD
DVSS
DVDD
AVDD
REGISTERS/MEMORY
BAND-PASS
FILTER
FAULT
DETECTION
TEMPERATURE
CALIBRATION
DECIMATION
FILTER
ALU
PHASE-
LOCKED
LOOP
CLOCK
DIVIDER
DEMOD
Q FILTER
Q DAQ
P DAQ
HV DRIV E
ST
CONTROL
ADC 12
AMPLITUDE
DETECT
08952-001
Z-AX IS ANG ULAR
RATE SENSO R
ADXRS450
Figure 1.
ADXRS450 Data Sheet
Rev. C | Page 2 of 28
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance ...................................................................... 4
Rate Sensitive Axis ....................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Typical Performance Characteristics ............................................. 7
Theory of Operation ........................................................................ 9
Continuous Self-Test .................................................................... 9
Applications Information .............................................................. 10
Mechanical Considerations for Mounting .............................. 10
Applications Circuits ................................................................. 10
ADXRS450 Signal Chain Timing ............................................. 10
SPI Communication Protocol ....................................................... 12
Command/Response ................................................................. 12
SPI Communications Characteristics ...................................... 13
SPI Applications ......................................................................... 14
SPI Rate Data Format ..................................................................... 19
Memory Map and Registers .......................................................... 20
Memory Map .............................................................................. 20
Memory Register Definitions ................................................... 21
Package Orientation and Layout Information ............................ 23
Package Marking Codes ............................................................ 25
Outline Dimensions ....................................................................... 26
Ordering Guide .......................................................................... 27
REVISION HISTORY
5/13Rev. B to Rev. C
Changes to Features Section............................................................ 1
Changed Null Accuracy from ±3°/sec to ±6°/sec......................... 3
Deleted Figure 6 from Low-Pass Filter Cut-Off (−3 dB)
Frequency Test Conditions/Comments and Figure 7 from ST
Low-Pass Filter −3 dB Frequency Test Conditions/Comments.... 3
Changes to Figure 6, Figure 7, and Figure 11 ............................... 7
Deleted Figure 10; Renumbered Sequentially............................... 7
Deleted Figure 13 and Figure 15 ..................................................... 8
Added Figure 12; Renumbered Sequentially ................................ 8
Changes to Figure 13 and Figure 15 ............................................... 8
Deleted Calibrated Performance Section .................................... 10
Changes to Applications Circuits Section ................................... 11
Changes to Figure 25 ...................................................................... 18
Changed Heading in Table 14 to 16-Bit Rate Data .................... 19
Updated Outline Dimensions ....................................................... 26
12/11Rev. A to Rev. B
Changes to the Rate Sensitive Axis Section .................................. 4
Changes to Figure 5 .......................................................................... 6
Changes to Figure 28 ...................................................................... 23
Deleted Figure 31, Renumbered Sequentially............................. 24
Changes to Back Side Terminals Notation, Figure 34 ............... 26
6/11Rev. 0 to Rev. A
Changes to Ordering Guide .......................................................... 28
1/11Revision 0: Initial Version
Data Sheet ADXRS450
Rev. C | Page 3 of 28
SPECIFICATIONS
Specification conditions @ TA = TMIN to TMAX, PDD = 5 V, angular rate = 0°/sec, bandwidth = 80 Hz ±1 g, continuous self-test on.
Table 1.
Parameter Test Conditions/Comments Symbol Min Typ Max Unit
MEASUREMENT RANGE Full-scale range FSR ±300 ±400 °/sec
SENSITIVITY See Figure 2
Nominal Sensitivity 80 LSB/°/sec
Sensitivity Tolerance ±3 %
Nonlinearity1 Best fit straight line 0.05 0.25 % FSR rms
Cross Axis Sensitivity2 ±3 %
NULL
Null Accuracy ±6 °/sec
NOISE PERFORMANCE
Rate Noise Density TA = 25°C 0.015 °/sec/√Hz
LOW-PASS FILTER
Cut-Off (−3 dB) Frequency f0/200 fLP 80 Hz
Group Delay3 f = 0 Hz tLP 3.25 4 4.75 ms
SHOCK AND VIBRATION IMMUNITY
Sensitivity to Linear Acceleration DC to 5 kHz 0.03 °/sec/g
Vibration Rectification
0.003
°/sec/
g
2
SELF TEST See Continuous Self-Test
section
Magnitude 2559 LSB
Fault Register Threshold Compared to LOCST data 2239 2879 LSB
Sensor Data Status Threshold
Compared to LOCST data
1279
3839
LSB
Frequency f0/32 fST 500 Hz
ST Low-Pass Filter
−3 dB Frequency f0/800 2 Hz
Group Delay3 52 64 76 ms
SPI COMMUNICATIONS
Clock Frequency 8.08 MHz
Voltage Input High MOSI, CS, SCLK 0.85 × PDD PDD + 0.3 V
Voltage Input Low MOSI, CS, SCLK −0.3 PDD × 0.15 V
Output Voltage Low MISO, current = 3 mA 0.5 V
Output Voltage High MISO, current = −2 mA PDD − 0.5 V
Pull-Up Current CS, PDD = 3.3 V, CS = 0.75 × PDD 50 200 µA
CS, PDD = 5 V, CS = 0.75 × PDD
70
300
µA
MEMORY REGISTERS See the Memory Register
Definitions section
Temperature Sensor
Value at 45°C 0 LSB
Scale Factor 5 LSB/°C
Quad, ST, Rate, DNC Registers
Scale Factor 80 LSB/°/sec
POWER SUPPLY
Supply Voltage PDD 3.15 5.25 V
Quiescent Supply Current IDD 6.0 10.0 mA
Turn-On Time Power on to 0.5°/sec of final 100 ms
TEMPERATURE RANGE Independent of package type TMIN, TMAX −40 +105 °C
1 Maximum limit is guaranteed through Analog Devices, Inc., characterization.
2 Cross axis sensitivity specification does not include effects due to device mounting on a printed circuit board (PCB).
3 Minimum and maximum limits are guaranteed by design.
ADXRS450 Data Sheet
Rev. C | Page 4 of 28
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Acceleration (Any Axis, 0.5 ms)
Unpowered 2000 g
Powered 2000 g
Supply Voltage (PDD) −0.3 V to +6.0 V
Output Short-Circuit Duration (Any Pin to
Ground)
Indefinite
Temperature Range
Operating
LCC_V Package −40°C to +125°C
SOIC_CAV Package −40°C to +125°C
Storage
LCC_V Package −65°C to +150°C
SOIC_CAV Package −40°C to +150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, for a device
soldered in a printed circuit board (PCB) for surface-mount
packages.
Table 3. Thermal Resistance
Package Type θJA θ
JC Unit
16-Lead SOIC_CAV 191.5 25 °C/W
14-Lead Ceramic LCC_V 185.5 23 °C/W
RATE SENSITIVE AXIS
The ADXRS450 is available in two package options. The
SOIC_CAV package configuration is for applications that
require a z-axis (yaw) rate sensing device.
The vertical mount package (LCC_V) option is for applications
that require rate sensing in the axes parallel to the plane of the
PCB (pitch and roll). See Figure 2 for details.
LCC_V P ACKAGE
08952-002
RATE
AXIS
+
RATE
AXIS
+
SOIC PACKAG E
9
16
Z-AXIS
Figure 2. Rate Signal Increases with Clockwise Rotation
The LCC_V package has terminals on two faces; however, the
terminals on the back side are for internal evaluation only and
should not be used in the end application. The terminals on the
bottom of the package incorporate metallization bumps that
ensure a minimum solder thickness for improved solder joint
reliability. These bumps are not present on the back side
terminals and, therefore, poor solder joint reliability can be
encountered if used in the end application. See Figure 32 in the
Outline Dimensions section for a schematic of the LCC_V
package.
ESD CAUTION
Data Sheet ADXRS450
Rev. C | Page 5 of 28
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 3. SOIC_CAV Pin Configuration
Table 4. 14-Lead SOIC_CAV Pin Function Descriptions
Pin No. Mnemonic Description
1 DVDD Digital Regulated Voltage. See Figure 19 for the applications circuit diagram.
2 RSVD Reserved. This pin must be connected to DVSS.
3 RSVD Reserved. This pin must be connected to DVSS.
4 CS Chip Select.
5 MISO Master In/Slave Out.
6 PDD Supply Voltage.
7 PSS Switching Regulator Ground.
8 VX High Voltage Switching Node. See Figure 19 for the applications circuit diagram.
9 CP5 High Voltage Supply. See Figure 19 for the applications circuit diagram.
10 RSVD Reserved. This pin must be connected to DVSS.
11
AV
SS
Analog Ground.
12 RSVD Reserved. This pin must be connected to DVSS.
13 DVSS Digital Signal Ground.
14 AVDD Analog Regulated Voltage. See Figure 19 for the applications circuit diagram.
15 MOSI Master Out/Slave In.
16 SCLK SPI Clock.
ADXRS450 Data Sheet
Rev. C | Page 6 of 28
1234567
14 13 12 11 10 9 8
P
DD
P
SS
MOSI
DV
SS
CS
VX
RSVD
AV
SS
AV
DD
MISO
DV
DD
SCLK
CP5
RSVD
TOP VIEW
(No t to Scale)
08952-005
Figure 4. LCC_V Pin Configuration
08952-037
1234567
(No t to S c ale)
CP5
RSVD
SCLK
DV
DD
MISO
AV
DD
AV
SS
141312111098
VX
RSVD
CS
DV
SS
MOSI
P
SS
P
DD
NOTES
1. THE LCC_V P ACKAGE HAS TW O TERMI NALS ON TWO FACES ; HOW E V E R, T HE TERM INALS ON T HE BACK
SIDE ARE F OR I NTERNAL EVAL UAT IO N ONL Y AND SHOUL D NOT BE USED I N THE E ND AP P LI CAT IO N. T HE
TE RM INALS ON THE BOTTO M OF THE PACKAGE INCORP ORAT E M E TAL LIZAT ION BUMPS T HAT ENSURE A
MI NIMUM SOLDER THICKNE S S FO R IMP ROVE D SOL DE R JOI NT RELIABIL IT Y. T HESE BUMPS ARE NOT
PRESE NT O N THE BACK SIDE T ERMI NALS AND, THE RE FO RE , PO OR SOLDER JOINT RE LI ABILITY CAN BE
ENCOUNTERE D IF USED I N THE END APPL ICATIO N. SEE THE OUT LINE DIME NSIO NS SECTION F OR A
SCHEMATI C OF THE LCC_V PACKAGE.
Figure 5. LCC_V Pin Configuration, Horizontal Layout
Table 5. 14-Lead LCC_V Pin Function Descriptions
Pin No. Mnemonic Description
1 AVSS Analog Ground.
2 AVDD Analog Regulated Voltage. See Figure 20 for the applications circuit diagram.
3 MISO Master In/Slave Out.
4 DVDD Digital Regulated Voltage. See Figure 20 for the applications circuit diagram.
5 SCLK SPI Clock.
6 CP5 High Voltage Supply. See Figure 20 for the applications circuit diagram.
7 RSVD Reserved. This pin must be connected to DVSS.
8 RSVD Reserved. This pin must be connected to DVSS.
9 VX High Voltage Switching Node. See Figure 20 for the applications circuit diagram.
10 CS Chip Select.
11 DVSS Digital Signal Ground.
12 MOSI Master Out/Slave In.
13 PSS Switching Regulator Ground.
14 PDD Supply Voltage.
Data Sheet ADXRS450
Rev. C | Page 7 of 28
TYPICAL PERFORMANCE CHARACTERISTICS
20
18
16
14
12
10
8
6
4
0
2
–1.6
–2.0
–1.2
0
1.6
2.0
1.2
0.8
–0.8
–0.4
0.4
% OF POPULATION
NULL ERRO R ( °/ sec)
08952-006
Figure 6. SOIC_CAV Null Error @ 25°C
30
25
20
15
10
5
0
% OF POPULATION
08952-007
–0.20
–0.18
–0.16
–0.14
–0.12
–0.10
–0.08
–0.06
–0.04
–0.02
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
NULL TEMPERATURE COEFFICIENT (°/sec/°C)
Figure 7. SOIC_CAV Null Temperature Coefficient
25
20
15
10
5
0
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
% OF POPULATION
CHANGE IN SENS IT IVI TY ( %)
08952-008
Figure 8. SOIC_CAV Sensitivity Error @ 25°C
40
35
30
25
20
15
10
5
0–2.0 –1.6 –1.2 –0.8 –0.4 02.01.61.20.80.4
% OF POPULATION
NULL ERRO R ( °/ sec)
08952-009
Figure 9. LCC_V Null Error @ 25°C
25
20
15
10
5
0
% OF POPULATION
08952-029
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
CHANGE IN SENS IT IVI TY (%)
Figure 10. LCC_V Sensitivity Error @ 25°C
20
0
% OF POPULATION
08952-112
SENSITIVITY DRIFT (%/°C)
5
10
15
–0.08
–0.07
–0.06
–0.05
–0.04
–0.03
–0.02
–0.01
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.10
Figure 11. SOIC_CAV Sensitivity Drift over Temperature
ADXRS450 Data Sheet
Rev. C | Page 8 of 28
1
0.1
0.01
0.001
0.0001 510 300100
FRE QUENCY ( Hz )
GYRO OUTPUT (°/s/Hz)
08952-031
Figure 12. DUT Typical Response to Random Vibration
(5 Hz to 5 kHz at 15 g RMS)
–8
–6
–4
–2
0
2
4
6
8
–50 –25
025 50 75 100 125
NULL DRIFT
(
°
/sec)
TEMPERATURE (°C)
08952-114
Figure 13. Null Drift over Temperature
40
30
20
10
–40
–30
–20
–10
0
0.1 0.15 0.20 0.25 0.30 0.35 0.40
GYRO OUTPUT (°/s)
60
40
50
30
20
–20
–10
0
10
INP UT ACCEL E RATI ON (g)
TIME ( sec)
08952-034
DUT1
DUT2
DUT AVERAGE (°/ s)
REF
Figure 14. Typical Shock Response
–50 –25 025 50 75 100 125
TEMPERATURE ( °C)
74
76
78
80
82
84
86
SENSITIVITY (LSB/°/sec)
08952-117
Figure 15. Sensitivity over Temperature
Data Sheet ADXRS450
Rev. C | Page 9 of 28
THEORY OF OPERATION
The ADXRS450 operates on the principle of a resonator gyro-
scope. A simplified version of one of four polysilicon sensing
structures is shown in Figure 16. Each sensing structure contains
a dither frame that is electrostatically driven to resonance. This
produces the necessary velocity element to produce a Coriolis
force when experiencing angular rate. In the SOIC_CAV package,
the ADXRS450 is designed to sense a z-axis (yaw) angular rate;
whereas the vertical mount package (LCC_V) orients the device
such that it can sense pitch or roll angular rate on the same PCB.
When the sensing structure is exposed to angular rate, the
resulting Coriolis force couples into an outer sense frame,
which contains movable fingers that are placed between fixed
pickoff fingers. This forms a capacitive pickoff structure that
senses Coriolis motion. The resulting signal is fed to a series of
gain and demodulation stages that produce the electrical rate
signal output. The quad sensor design rejects linear and angular
acceleration, including external g-forces and vibration. This is
achieved by mechanically coupling the four sensing structures
such that external g-forces appear as common-mode signals
that can be removed by the fully differential architecture
implemented in the ADXRS450.
08952-011
X
Y
Z
Figure 16. Simplified Gyroscope Sensing Structure
The resonator requires 22.5 V (typical) for operation. Because
only 5 V is typically available in most applications, a switching
regulator is included on chip.
CONTINUOUS SELF-TEST
The ADXRS450 gyroscope uses a complete electromechanical
self-test. An electrostatic force is applied to the gyroscope frame,
resulting in a deflection of the capacitive sense fingers. This
deflection is exactly equivalent to deflection that occurs as a
result of external rate input. The output from the beam structure is
processed by the same signal chain as a true rate output signal,
providing complete coverage of the electrical and mechanical
components.
The electromechanical self-test is performed continuously during
operation at a rate higher than the output bandwidth of the
device. The self-test routine generates equivalent positive and
negative rate deflections. This information can then be filtered
with no overall effect on the demodulated rate output.
RATE SIGNAL WITH
CONTINUOUS SELF TEST SIGNAL.
SELF TEST AMPLITUDE. INTERNALLY
COMPARED TO THE SPECIFICATION
TABLE LIMITS.
LOW FREQUENCY RATE INFORMATION.
08952-012
Figure 17. Continuous Self-Test Demodulation
The difference amplitude between the positive and negative
self-test deflections is filtered to 2 Hz, and it is continuously
monitored and compared to hardcoded self-test limits. If the
measured amplitude exceeds these limits (listed in Table 1), one
of two error conditions asserts depending on the magnitude of
self-test error. For less severe self-test error magnitudes, the CST
bit of the fault register is asserted; however, the status bits (ST[1:0])
in the sensor data response remain set to 0b01 for valid sensor
data. For more severe self-test errors, the CST bit of the fault reg-
ister is asserted, and the status bits (ST[1:0]) in the sensor data
response are set to 0b00 for invalid sensor data. Table 1 lists the
thresholds for both of these failure conditions. If desired, the user
can access the self-test information by issuing a read command to
the self-test memory register (Address 0x04). For more infor-
mation about error reporting, see the SPI Communication Protocol
section.
ADXRS450 Data Sheet
Rev. C | Page 10 of 28
APPLICATIONS INFORMATION
MECHANICAL CONSIDERATIONS FOR MOUNTING
Mount the ADXRS450 in a location close to a hard mounting
point of the PCB to the case. Mounting the ADXRS450 at an
unsupported PCB location (that is, at the end of a lever, or in
the middle of a trampoline), as shown in Figure 18, can result in
apparent measurement errors because the gyroscope is subject
to the resonant vibration of the PCB. Locating the gyroscope
near a hard mounting point helps to ensure that any PCB reson-
ances at the gyroscope are above the frequency at which harmful
aliasing with the internal electronics can occur. To ensure that
aliased signals do not couple into the baseband measurement
range, design the module wherein the first system level resonance
occurs at a frequency higher than 800 Hz.
MOUNTING POINTS
PCB
GYROSCOPE
08952-013
Figure 18. Incorrectly Placed Gyroscope
APPLICATIONS CIRCUITS
Figure 19 and Figure 20 show the recommended application
circuits for the ADXRS450 gyroscope. These application circuits
provide a connection reference for the available package types.
Note that DVDD, AVDD, and PDD are individually connected to
ground through 1 μF capacitors; do not connect these supplies
together. Additionally, an external diode and inductor must be
connected for proper operation of the internal shunt regulator.
These components (listed in Table 6) allow for the internal reso-
nator drive voltage to reach its required level, as listed in the
Specifications section.
Table 6. Internal Shunt Regulator Components
Component Qty. Description
Inductor 1 470 μH
Diode
1
>24 V breakdown voltage
Capacitor 3 1 μF
Capacitor 1 100 nF
Note the following schematic recommendations:
Keep leakage current on the CP5 pin to a minimum.
All sources of leakage, including reverse leakage current
through the diode and PCB surface leakage should account
for not more than 70 μA. For most applications, the diode
is the primary source of leakage current.
Applications that operate at 3.3 V should use an inductor
value of 560 μH to ensure proper operation of the internal
boost regulator. For all applications, the inductor should be
capable for 50 mA of peak current.
08952-014
116
DVDD
RSVD
RSVD
CS
MISO
PDD
VX
PSS
SCLK
MOSI
AVDD
DVSS
RSVD
AVSS
CP5
RSVD 100nF
1µF
1µF
3.3V TO 5V
1µF
DIODE
>24V BREAKDOW N
470µH
GND
GND
GND
Figure 19. Recommended Applications Circuit, SOIC_CAV Package
08952-015
AVSS
AVDD
MISO
DVDD
SCLK
CP5
RSVD
PDD
PSS
MOSI
DVSS
VX
RSVD
1µF
1µF
1µF
100nF
3.3V TO 5V
DIODE
>24V BREAKDOW N
GND
GND
470µH
GND
114
TOP VIEW
CS
Figure 20. Recommended Applications Circuit, Ceramic LCC_V Package
ADXRS450 SIGNAL CHAIN TIMING
The ADXRS450 primary signal chain is shown in Figure 21; it is
the series of necessary functional circuit blocks through which
the rate data is generated and processed. This sequence of electro-
mechanical elements determines how quickly the device is capable
of translating an external rate input stimulus into an SPI word
to be sent to the master device. The group delay, which is a func-
tion of the filter characteristic, is the time required for the output
of the low-pass filter to be within 10% of the external rate input,
and is seen to be ~4 ms. Additional delay can be observed due
to the timing of SPI transactions and the population of the rate
data into the internal device registers. Figure 21 anatomizes this
delay, wherein the delay through each element of the signal chain
is presented.
Data Sheet ADXRS450
Rev. C | Page 11 of 28
The transfer function for the rate data LPF is given as
2
1
64
1
1
Z
Z
where:
T = (typ)kHz16
11
0
f
The transfer function for the continuous self-test LPF is given as
1
6364
1
Z
where:
T = (typ)ms1
16
0
f
Z-AXIS ANGULAR
RATE SENSO R
SPI
TRANSACTION
REGISTERS/MEMORY
BAND-PASS
FILTER
ARITHMETIC
LOGIC UNIT
DEMOD
ADC 12
PRIMARY SIGNAL CH AIN
<5µs
DELAY
4ms
GROUP DELAY
<2.2ms
DELAY
<64ms
GROUP DELAY
RATE DATA
LPF
CONTINUOUS
SELF-TEST
LPF
<5µs
DELAY <5µs
DELAY
08952-016
Figure 21. Primary Signal Chain and Associated Delays
ADXRS450 Data Sheet
Rev. C | Page 12 of 28
SPI COMMUNICATION PROTOCOL
COMMAND/RESPONSE
Input/output is handled through a 32-bit, command/response
SPI interface. The command set and the format for the interface
is defined as follows:
Clock phase = clock polarity = 0
Additionally, the device response to the initial command is
0x00000001. This prevents the transmission of random data to
the master device upon the initial command/response exchange.
Table 7. SPI Signals
Signal Symbol Description
Serial Clock SCLK Exactly 32 clock cycles during CS active
Chip Select CS Active low
Master Out
Slave In
MOSI Data sent to the gyroscope device
from the main controller
Master In
Slave Out
MISO Data sent to the main controller
from the gyroscope
MOSI
MISO
32 CLOCK
CYCLES
SCLK
CS
COMM AND N
RESPONSE N – 1
32 CLO CK
CYCLES
COM MAND N + 1
RESPONSE N
08952-017
Figure 22. SPI Protocol
Table 8. SPI Commands
Command
Bit
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7
6
5 4 3 2 1 0
Sensor
Data
SQ1 SQ0 1 SQ2 CHK P
Read 1 0 0 SM2 SM1 SM0 A8 A7 A6 A5 A4 A3 A2 A1 A0 P
Write 0 1 0 SM2 SM1 SM0 A8 A7 A6 A5 A4 A3 A2 A1 A0 D15 D1
4
D13 D12 D11 D10 D9 D8 D7 D6 D5 D
4
D3 D2 D1 D0 P
Table 9. SPI Responses
Command
Bit
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
Sensor
Data
SQ2 SQ1 SQ0 P0 ST1 ST0 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 PLL Q NVM POR PWR CST CHK P1
Read 0 1 0 P0 1 1 1 0 SM2 SM1 SM0 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 P1
Write 0 0 1 P0 1 1 1 0 SM2 SM1 SM0 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 P1
R/W
Error
0 0 0 P0 1 1 1 0 SM2 SM1 SM0 0 0 SPI RE DU PLL Q NVM POR PWR CST CHK P1
Data Sheet ADXRS450
Rev. C | Page 13 of 28
SPI COMMUNICATIONS CHARACTERISTICS
Note the following conditions for Table 10:
All minimum and maximum timing values are guaranteed
through characterization.
All timing is shown with respect to 10% VDD and 90% of
the actual delivered voltage waveform.
All minimum and maximum timing values are valid for
3.0 V ≤ VDD ≤ 5.5 V.
Capacitive load for all signals is assumed to be ≤80 pF.
Ambient temperature is 40°C ≤ TA ≤ +105°C.
MISO pull-up of 47 kor 110 µA.
Sequential transfer increases to 17 ms following any write
operation limited by the EEPROM.
Table 10. SPI Command/Response Timing Characteristics
Symbol Description Min Max Unit
fOP SPI operating
frequency
8.08 MHz
tSCLKH Clock (SCLK)
high time
1/2tSCLK13 ns
tSCLKL Clock (SCLK) low
time
1/2tSCLK13 ns
tSCLK SCLK period 123.7 ns
tF Clock (SCLK) fall
time
5.5 13 ns
tR Clock (SCLK) rise
time
5.5 13 ns
tSU Data input
(MOSI) setup
time
37 ns
tHIGH Data input
(MOSI) hold time
49 ns
tA Data output
(MISO) access
time
20 ns
tV Data output
(MISO) valid after
SCLK
20 ns
tLAG Data output
(MISO) lag time
0 ns
tDIS Data output
(MISO) disable
time
40 ns
tLEAD Enable (CS) lead
time
1/2tSCLK ns
tLAG Enable (CS) lag
time
1/2tSCLK ns
tD Sequential
transfer delay
0.1 ms
f0 Gyroscope
resonant
frequency
13 19 kHz
ADXRS450 Data Sheet
Rev. C | Page 14 of 28
SPI APPLICATIONS
Device Data Latching
To allow for rapid acquisition of data from the ADXRS450,
device data latching has been implemented in the design, as shown
in Figure 24. Upon the assertion of chip select (CS), the data
present in the device is latched into memory. When the full
MOSI command has been received, and CS deasserted, the
appropriate data is shifted into the SPI port registers in prepara-
tion for the next sequential command/response exchange. This
allows for an exceedingly fast sequential transfer delay of 0.1 ms
(see Table 10). As a design precaution, note that the transmitted
data is only as recent as the sequential transmission delay imple-
mented by the system. Conditions that result in a sequential
transfer delay of several seconds cause the next sequential device
response to contain data that is several seconds old.
MSB
MSB
LSB
LSB
CS
SCK
MISO
MOSI
08952-018
t
SCLKH
t
SCLKL
t
SCLK
t
LEAD
t
F
t
A
t
LAG
t
R
t
LAG
t
D
t
V
t
DIS
t
HIGH
t
SU
Figure 23. SPI Timings
32 CLO CK
CYCLES
32 CLOCK
CYCLES 32 CLOCK
CYCLES
SCL
K
MOSI
MISO
COMM AND N
0x…
RESPONSE N – 1
0x00000001 RESPONS E N
0x… RESP ONSE N + 1
0x…
COM MAND N + 1
0x… COMM AND N + 2
0x…
0
8952-019
DEVI CE DAT A IS L AT CHED AF T ER T HE
ASSERTION OF CS. L ATCHED DAT A IS
TRANSM ITTED DURI NG THE NE XT
SEQ UE NTIAL COMM AND/RESP ONSE
EXCHANGE.
CS
Figure 24. Device Data Latching
Data Sheet ADXRS450
Rev. C | Page 15 of 28
Command/ResponseBit Definitions
Table 11. Quick GuideBit Definitions for SPI Interface
Bit Description
SQ2 to SQ0 Sequence bits (from master)
SM2 to SM0 Sensor module bits (from master)
A8 to A0 Register address
D15 to D0 Data
SPI SPI command/response
ST1 to ST0 Status bits
P Command odd parity
P0
Response, odd parity, Bits[31:16]
P1 Response, odd parity, Bits[31:0]
RE Request error
DU Data unavailable
SQ2 to SQ0
This field provides the system with a means of synchronizing
the data samples that are received from multiple sensors. To
facilitate correct synchronization, the ADXRS450 gyroscope
includes the SQ[2:0] field in the response sequence as it was
received in the request.
SM2 to SM0
Sensor module bits from master device. These bits have not
been implemented in the ADXRS450, and are hardcoded to be
000 for all occurrences.
A8 to A0
The A8 to A0 bits represent the memory address from which
device data is being read, or to which information is to be written.
These bits should only be supplied by the master when the
memory registers are being accessed, and are ignored for all
sensor data requests. Refer to the Memory Register Definitions
section for a complete description of the available memory
registers.
D15 to D0
16-bit device data that can contain any of the following:
Master—data to be written to a memory register as
specified in the A8 to A0 section.
Slavesensor rate output data.
Slavedevice data read from the memory register
specified in the A8 to A0 section, as well as the data from
the next sequential register.
Slavefor a write command, the 16-bit data that is written
to the specified memory register reflects back to the master
device for correlation.
SPI
The SPI bit sets when any of the following occurs: either too
many/not enough bits are transmitted, or the message from the
control module contains a parity error. Additionally, any error
during a sensor data request results in the device issuing a
read/write error.
ST1 to ST0
The status bits (ST1 and ST0) are used to signal to the master
device the type of data contained in the response message. The
status bits are decoded as listed in Table 12.
Table 12. Status Bit Code Definitions
ST1:ST0 Content in Bits[D15:D0]
00 Error data for sensor data response
01 Valid sensor data
10 Sensor self-test data
11 Read/write response
There are two independent conditions that can result in the ST
bits being set to 0b00 during a sensor data response: self-test or
PLL. The self-test response is sufficiently different from its nominal
value. Refer to the Specifications section for the appropriate limits.
When the sensor data response is a PLL, the PLL fault is active.
P
A parity bit (P) is required for all master-to-slave data transmis-
sions. Communications protocol requires one parity bit to achieve
odd parity for the entire 32-bit command. Bits that are in dont
care positions remain factored into the parity calculation.
P0
P0 is the parity bit that establishes odd parity for Bits[31:16] of
the device response.
P1
P1 is the parity bit that establishes odd parity for the entire
32-bit device response.
RE
RE is the communications error bit transmitted from the
ADXRS450 device to the control module. Request errors (RE)
can occur when
An invalid command is sent from the control module.
The read/write command specifies an invalid memory
register.
The write command attempted to a nonwriteable memory
register.
DU
As expressed in Table 10, the sequential transfer delay for
writing data to a memory register (for example, DNC0) results
in a sequential transfer delay of 0.1 ms. If a successive write
command is issued to the device prior to the completion of the
sequential transfer delay, the command is ignored and the device
issues a data unavailable (DU) error response. However, a read
command or sensor data request can be issued after a sequential
transfer delay of only 10 µs is observed. Regardless of the com-
mands that are subsequently issued to the device, when a write
procedure has been initiated, the operation proceeds through to
completion (requiring 17 ms).
ADXRS450 Data Sheet
Rev. C | Page 16 of 28
Fault Register Bit Definitions
This section describes the bits available for signaling faults to
the user. The individual bits of the fault register are updated
asynchronously depending on their respective detection criteria;
however, it is recommended that the fault register be read at a
rate of at least 250 Hz. When asserted, the individual status bit
does not deassert until it is read by the master device. If the
error persists after a fault register read, the status bit immediately
reasserts, and remains asserted until the next sequential command/
response exchange. The full fault register is appended to every
sensor data request. It can also be accessed by issuing a read
command to Register 0x0A.
Table 13. Quick GuideFault Register Bit Definitions
Bit Name Description
PLL PLL failure
Q Quadrature error
NVM Nonvolatile memory fault (NVM)
POR Power-on reset failed to initialize
UV Regulator undervoltage
Amp Amplitude detection failure
PWR Power regulation failed: overvoltage/undervoltage
CST Continuous self-test failure
CHK Check: generate faults
OV
Regulator overvoltage
Fail Failure that sets the ST[1:0] bits to 0b00
PLL
PLL is the bit indicating that the device has had a failure in the
phase-locked loop functional circuit block. This occurs when
the PLL has failed to achieve sync with the resonator structure.
If the PLL status flag is active, the ST bits of the sensor data
response are set to 0b00, indicating that the response contains
potentially invalid rate data.
Q
A Q fault can be asserted based on two independent quadrature
calculations. Located in the quad memory (Register 0x08) is a
value corresponding to the total instantaneous quadrature present
in the device. If this value exceeds 4096 LSB, a Q fault is issued.
Because quadrature build-up can contribute to an offset error,
the ADXRS450 has integrated methods for dynamically cancelling
the effects of quadrature. An internal quadrature accumulator
records the amount of quadrature correction performed by the
ADXRS450. Excessive quadrature is associated with offset errors.
A Q fault is issued when the quadrature error (Q) present in the
device has contributed to an equivalent of 4°/sec (typical) of rate
offset.
NVM
An NVM error transmits to the control module when the
internal NVM data fails a checksum calculation. This check is
performed once every 50 µs, and does not include the DNC0 or
PID memory registers.
POR
An internal check is performed at the time of device startup to
ensure that the volatile memory of the device is functional. This
is accomplished by programming a known value from the device
ROM into a volatile memory register. This value is then conti-
nuously compared to the known value in ROM every 1 µs for the
duration of device operation. If the value stored in the volatile
memory changes, or does not match the value stored in ROM,
the POR error flag is asserted. The value stored in ROM is
rewritten to the volatile memory upon a device power cycle.
PWR
The device performs a continuous check of the internal 3 V
regulated voltage level. If either an overvoltage (OV) or under-
voltage (UV) fault is asserted, then the power (PWR) bit is also
asserted. This condition occurs if the regulated voltage is observed
to be either above 3.3 V or below 2.77 V. An internal low-pass filter
removes high frequency glitching effects to prevent the PWR bit
from asserting unnecessarily. To determine if the fault is a result of
an overvoltage or undervoltage condition, the OV and UV fault
bits must be analyzed.
CST
The ADXRS450 is designed with continuous self-test (CST)
functionality. Measured self-test amplitudes are compared
against the limits presented in Table 1. Deviations from this
value are what result in reported self-test errors. There are two
thresholds for a self-test failure.
Self-test value > ±512 LSB from nominal results in an
assertion of the self-test flag in the fault register.
Self-test value > ±1856 LSB from nominal results in both an
assertion of the self-test flag in the fault register as well as
setting the ST[1:0] bits to 0b00, indicating that the rate data
contained in the sensor data response is potentially invalid.
CHK
The control module transmits the check (CHK) bit to the
ADXRS450 as a method of generating faults. By asserting
the CHK bit, the device creates conditions that result in the
generation of all faults represented through the fault register.
For example, the self-test amplitude is deliberately altered to
exceed the fault detection threshold, resulting in a self-test
error. In this way, the device is capable of checking both its
ability to detect a fault condition, as well as its ability to report
that fault to the control module.
The fault conditions are initiated nearly simultaneously; however,
the timing for receiving fault codes when the CHK bit is asserted is
dependent upon the time required to generate each unique fault. It
takes no more than 50 ms for all of the internal faults to be generated
and for the fault register to be updated to reflect the condition of
the device. Until the CHK bit is cleared, the status bits (ST[1:0]) are
set to 0b10, indicating that the data should be interpreted by the
control module as self-test data. After the CHK bit is deasserted,
the fault conditions require an additional 50 ms to decay, and
the device to return to normal operation.
Data Sheet ADXRS450
Rev. C | Page 17 of 28
OV
The overvoltage (OV) fault bit asserts if the internally regulated
voltage (nominally 3 V) is observed to exceed 3.3 V. This measure-
ment is low-pass filtered to prevent artifacts such as noise spikes
from asserting a fault condition. When an OV fault has occurred,
the PWR fault bit is asserted simultaneously. Because the OV
fault bit is not transmitted as part of a sensor data request, it is
recommended that the user read back the FAULT1 and FAULT0
memory registers upon the assertion of a PWR error. This
allows the user to determine the specific error condition.
UV
The undervoltage (UV) fault bit asserts if the internally regu-
lated voltage (nominally 3 V) is observed to be less than 2.77 V.
This measurement is low-pass filtered to prevent artifacts such
as noise spikes from asserting a fault condition. When a UV
fault has occurred, the PWR fault bit is asserted simultaneously.
As the UV fault bit is not transmitted as part of a sensor data
request, it is recommended that the user read back the FAULT1
and FAULT0 memory registers upon the assertion of a PWR
error. This allows the user to determine the specific error
condition.
Fail
The fail flag is asserted when a condition arises such that the
ST[0:1] bits are set to 0b00. This indicates that the device has
experienced a gross failure, and that the sensor data could
potentially be invalid.
Amp
The amp fault bit is asserted when the measured amplitude of
the silicon resonator has been significantly reduced. This con-
dition can occur if the voltage supplied to CP5 has fallen below
the requirements of the internal voltage regulator. This fault bit
is OR’ed with the CST fault such that during a sensor data request,
the CST bit position represents either an amp failure or a CST
failure. The full status register can then be read from memory to
validate the specific failure.
K-Bit Assertion: Recommended Start-Up Routine
Figure 25 illustrates a recommended start-up routine that can
be implemented by the user. Alternate start-up sequences can be
employed; however, ensure that the response from the ADXRS450
is handled correctly. If implemented immediately after power is
applied to the device, the total time to implement the following
fault detection routine is approximately 200 ms.
As described in the Device Data Latching section, the data present
in the device upon the assertion of the CS signal is used in the
next sequential command/response exchange. This results in
an apparent one transaction delay before the data resulting from
the assertion of the CHK command is reported by the device.
For all other read/write interactions with the device, no such
delay exists, and the MOSI command is serviced during the
next sequential command/response exchange. Note that when
the CHK bit is deasserted, if the user tries to obtain data from
the device before the CST fault flag has cleared, the device reports
the data as error data.
ADXRS450 Data Sheet
Rev. C | Page 18 of 28
08952-020
0x2000 00000x2000 00000x2000 0003 0x2000 0000
ANOTHER 5 0ms DE LAY M UST
BE OBSERVED TO ALLOW
THE FAULT CONDITIONS TO
CLEAR. IF THE DEVICE IS
FUNCTIONING PROPERLY,
THE MISO RESPONSE
CONTAI NS A LL AC TI VE
FAULTS, AS WELL AS HAVING
SET THE MESSAGE FO RMAT
TO SELF-TEST DATA. THIS IS
INDICAT E D THROUGH THE S T
BIT S BEING SET T O 0b10.
A 50ms DELAY IS REQUIRED
SO THAT THE GENERATION
OF FAULTS WITHIN THE
DEVICE IS ALLOW E D TO
COMPLETE. HOW EVER,
BECAUSE THE DEVICE DATA
IS LATCHED BEFORE THE
CHK BIT I S ASSERTED, THE
DEVICE RESPONSE DURING
THIS COMMAND/RESPONSE
EXCHANGE DOES NOT
CONTAI N FAUL T
INFORMATION. THIS
RESPONSE CAN BE
DISCARDED.
ONCE THE 100ms START-UP
TIME HAS OCCURRED, T HE
MASTER DEVICE IS FREE TO
ASSERT THE CHK BIT AND
START THE PROCESS OF
INT E RNAL ERRO R
CHECKI NG. DURING THE
FIRST CO M M AND /
RESPONSE EXCHANGE
AFTER POWER-ON, THE
ADXRS800 IS DESIGNED TO
ISSUE A PREDEFINED
RESPONSE.
POWER IS
A
PPLIED T
O
T
HE DEV ICE.
W
AIT 100 ms T O
A
LLOW FO
R
T
HE IN TERNAL
CIRCUIT RY T
O
BE INITIALIZED.
THE FAULT BITS OF THE
ADXRS800 REMAIN ACTI VE
UNTIL C L EARED. DUE TO
THE RE QUI RED DECAY
PERIO D FOR EACH FAULT
CONDIT IO N, F AULT
CONDIT IO NS REMAI N
PRESENT UPON THE
IMMEDIATE DEASSERTION
OF THE CHK BIT. THIS
RESULTS IN A SECOND
SEQUENTIAL RESPONSE IN
WHICH THE FAULT BITS ARE
ASSERTED. AGAIN, THE
RESPONSE IS FORMATTED
AS SELF - T E ST DAT A
INDICAT ING THAT THE
FAULT BITS HAVE BEEN SET
INTENTIONALLY.
ALL FAULT
CONDI TI O NS ARE
CLE ARE D, AND ALL
SUBSE QUENT DAT A
EXCHANG E S NEE D
ONLY OBSERVE
THE SEQUENTIAL
TRANSFER DELAY
TIMING
PARAMETER.
0x…FF OR 0x…FE
(PARITY DEPENDENT) 0x…FF OR 0x…FE
(PARITY DEPENDENT)
0x…0x0000001
MOSI
SCLK
CS
MISO
32 CLO CK
CYCLES 32 CLOCK
CYCLES 32 CLOCK
CYCLES 32 CLOCK
CYCLES
DATA LATCH POINT
MOSI: SENSOR DATA REQUEST
CHK COMMAND ASSERTED
MISO: ST ANDARD INITIAL
RESPONSE
MOSI: SENSOR DATA
REQUEST; CLEARS THE
CHK BIT
MISO: SENSOR DATA
RESPONSE
MOSI: SENSOR DATA
REQUEST
MISO: CHK RESPONSE
ST[1:0] = 0b10
MOSI: SENSOR DATA
REQUEST
MISO: CHK RESPONSE
ST[1:0] = 0b10
XX X
t = 100ms t = 15 0ms t = 200ms t = 200 ms +
t
TD
t = 20 0ms + 2
t
TD
Figure 25. Recommended Start-Up Sequence
Data Sheet ADXRS450
Rev. C | Page 19 of 28
SPI RATE DATA FORMAT
The ADXRS450 gyroscope transmits rate data in a 16-bit format,
as part of a 32-bit SPI data frame. See Table 9 for the full 32-bit
format of the sensor data request response. The rate data is trans-
mitted MSB first, from D15 to D0. The data is formatted as a
twos complement number, with a scale factor of 80 LSB/°/sec.
Therefore, the highest obtainable value for positive (clockwise)
rotation is 0x7FFF (decimal +32,767), and for counterclockwise
rotation is 0x8000 (decimal −32,768). Performance of the device
is not guaranteed above ±24,000 LSB (±300°/sec).
Table 14. Rate Data
16-Bit Rate Data
Data Type Description
Decimal (LSBs) Hex (D15:D0)
+32,767 0x7FFF Rate data (not guaranteed) Maximum possible positive data value
+24,000 0x5DC0 Rate data +300 degrees per second rotation (positive FSR)
+160
0x00A0
Rate data
+2 degrees per second rotation
+80 0x0050 Rate data +1 degree per second rotation
+40 0x0028 Rate data +1/2 degree per second rotation
+20 0x0014 Rate data +1/4 degree per second rotation
0 0x 0000 Rate data Zero rotation value
−20 0xFFEC Rate data −1/4 degree per second rotation
−40 0xFFD8 Rate data −1/2 degree per second rotation
−80 0xFFB0 Rate data −1 degree per second rotation
−160 0xFF60 Rate data −2 degree per second rotation
−24,000 0xA240 Rate data −300 degree per second rotation (negative FSR)
−32,768 0x8000 Rate data (not guaranteed) Maximum possible negative data value
ADXRS450 Data Sheet
Rev. C | Page 20 of 28
MEMORY MAP AND REGISTERS
MEMORY MAP
The following is a list of the memory registers that are available
to be read from or written to by the customer. See the previous
section SPI Communication Protocol for the proper input
sequence to read/write a specific memory register. Each
memory register is comprised of eight bits of data, however,
when a read request is performed, the data always returns as a
16-bit message. This is accomplished by appending the data
from the next, sequential register to the memory address that was
specified. Data is transmitted MSB first. For proper acquisition of
data from the memory register, make the read request to the even
numbered register address only. Following the memory map
(see Table 15) is the explanation of the significance of each
memory register.
Table 15. Memory Register Map
Address Register Name MSB D6 D5 D4 D3 D2 D1 LSB
0x00 RATE1 RTE15 RTE14 RTE13 RTE12 RTE11 RTE10 RTE9 RTE8
0x01 RATE0 RTE7 RTE6 RTE5 RTE4 RTE3 RTE2 RTE1 RTE0
0x02 TEM1 TEM9 TEM8 TEM7 TEM6 TEM5 TEM4 TEM3 TEM2
0x03 TEM0 TEM1 TEM0 (Unused) (Unused) (Unused) (Unused) (Unused) (Unused)
0x04 LOCST1 LCST15 LCST14 LCST13 LCST12 LCST11 LCST10 LCST9 LCST8
0x05 LOCST0 LCST7 LCST6 LCST5 LCST4 LCST3 LCST2 LCST1 LCST0
0x06 HICST1 HCST15 HCST14 HCST13 HCST12 HCST11 HCST10 HCST9 HCST8
0x07 HICST0 HCST7 HCST6 HCST5 HCST4 HCST3 HCST2 HCST1 HCST0
0x08 QUAD1 QAD15 QAD14 QAD13 QAD12 QAD11 QAD10 QAD9 QAD8
0x09 QUAD0 QAD7 QAD6 QAD5 QAD4 QAD3 QAD2 QAD1 QAD0
0x0A FAULT1 (Unused) (Unused) (Unused) (Unused) FAIL AMP OV UV
0x0B FAULT0 PLL Q NVM POR PWR CST CHK 0
0x0C PID1 PIDB15 PIDB14 PIDB13 PIDB12 PIDB11 PIDB10 PIDB9 PIDB8
0x0D PID0 PIDB7 PIDB6 PIDB5 PIDB4 PIDB3 PIDB2 PIDB1 PIDB0
0x0E SN3 SNB31 SNB30 SNB29 SNB28 SNB27 SNB26 SNB25 SNB24
0x0F SN2 SNB23 SNB22 SNB21 SNB20 SNB19 SNB18 SNB17 SNB16
0x10 SN1 SNB15 SNB14 SNB13 SNB12 SNB11 SNB10 SNB9 SNB8
0x11 SN0 SNB7 SNB6 SNB5 SNB4 SNB3 SNB2 SNB1 SNB0
0x12 DNC1 (Unused) (Unused) (Unused) (Unused) (Unused) (Unused) DNCB9 DNCB8
0x13 DNC0 DNCB7 DNCB6 DNCB5 DNCB4 DNCB3 DNCB2 DNCB1 DNCB0
Data Sheet ADXRS450
Rev. C | Page 21 of 28
MEMORY REGISTER DEFINITIONS
The SPI accessible memory registers are described in this section.
As explained in the previous section, when requesting data
from a memory register, only the first sequential memory
address need be addressed. The data returned by the device
contain 16 bits of memory register information. Bits[15:8]
contain the MSB of the requested information, and Bits[7:0]
contain the LSB.
Rate Registers
Addresses: 0x00 (RATE1)
0x01 (RATE0)
Register update rate:
500 Hz
Scale factor:
80 LSB/°/sec
The rate registers contain the temperature compensated rate output
of the device filtered to 80 Hz. This data can also be accessed by
issuing a sensor data read request to the device. The data is pre-
sented as a 16-bit, twos complement number.
MSB LSB
D15 D14 D13 D12 D11 D10 D9 D8
D7 D6 D5 D4 D3 D2 D1 D0
Temperature (TEMx) Registers
Addresses:
0x02 (TEM1),
0x03 (TEM0)
Register update rate:
500 Hz
Scale factor: 5 LSB/°C
The TEM register contains a value corresponding to the temper-
ature of the device. The data is presented as a 10-bit, twos
complement number. 0 LSB corresponds to a temperature of
approximately 4C.
MSB LSB
D9 D8 D7 D6 D5 D4 D3 D2
D1 D0 (Unused)
Table 16.
Temperature Value of TEM1:TEM0
45°C 0000 0000 00XX XXXX
85°C 0011 0010 00XX XXXX
0°C 1100 0111 11XX XXXX
Low CST (LOCST) Memory Registers
Addresses:
0x04 (LOCST1)
0x05 (LOCST0)
Register update rate: 1000 Hz
Scale factor:
80 LSB/°/sec
The LOCST memory registers contain the value of the temperature
compensated and low-pass filtered continuous self-test delta.
This value is a measure of the difference between the positive
and negative self-test deflections and corresponds to the values
presented in Table 1. The device issues a CST error if the value
of self-test exceeds the established self-test limits. The self-test
data is filtered to 2 Hz to prevent false triggering of the CST
fault bit. The data is presented as a 16-bit, twos complement
number, with a scale factor of 80 LSB/°/sec.
MSB LSB
D15 D14 D13 D12 D11 D10 D9 D8
D7 D6 D5 D4 D3 D2 D1 D0
High CST (HICST) Memory Registers
Addresses:
0x06 (HICST1),
0x07 (HICST0)
Register update rate:
1000 Hz
Scale factor:
80 LSB/°/sec
The HICST register contains the unfiltered self-test information.
The HICST data can be used to supplement fault diagnosis in
safety critical applications as sudden shifts in the self-test response
can be detected. However, the CST bit of the fault register is not
set when the HICST data is observed to exceed the self-test limits.
Only the LOCST memory registers, which are designed to filter
noise and the effects of sudden temporary self-test spiking due to
external disturbances, control the assertion of the CST fault bit.
The data is presented as a 16-bit, twos complement number.
MSB LSB
D15 D14 D13 D12 D11 D10 D9 D8
D7
D6
D5
D4
D3
D2
D1
D0
Quad Memory Registers
Addresses:
0x08 (QUAD1)
0x09 (QUAD0)
Register update rate:
250 Hz
Scale factor:
80 LSB/°/sec equivalent
The quad memory registers contain a value corresponding to
the amount of quadrature error present in the device at a given
time. Quadrature can be likened to a measurement of the error
of the motion of the resonator structure, and can be caused by
stresses and aging effects. The quadrature data is filtered to
80 Hz and can be read frequently to detect sudden shifts in the
level of quadrature. The data is presented as a 16-bit, twos
complement number.
MSB LSB
D15 D14 D13 D12 D11 D10 D9 D8
D7
D6
D5
D4
D3
D2
D1
D0
ADXRS450 Data Sheet
Rev. C | Page 22 of 28
Fault Registers
Addresses:
0x0A (FAULT1)
0x0B (FAULT0)
Register update rate:
Not applicable
Scale factor:
Not applicable
The fault register contains the state of the error flags in the
device. The FAULT0 register is appended to the end of every
device data transmission (see Table 13); however, this register
can also be accessed independently through its memory location.
The individual fault bits are updated asynchronously, requiring
<5 µs to activate, as soon as the fault condition exists on-chip.
When toggled, each fault bit remains active until the fault
register is read or a sensor data command is received. If the
fault is still active after the bit is read, the fault bit immediately
reasserts itself.
MSB LSB
(Unused) FAIL AMP OV UV
PLL Q NVM POR PWR ST CHK 0
Part ID (PID) Registers
Addresses:
0x0C (PID1)
0x0D (PID0)
Register update rate:
Not applicable
Scale factor:
Not applicable
The part identification registers contain a 16-bit number identi-
fying the version of the ADXRS450. Combined with the serial
number, this information allows for a higher degree of device
individualization and tracking. The initial product ID is R01
(0x5201), with subsequent versions of silicon incrementing this
value to R02, R03, and so forth.
MSB
LSB
D15 D14 D13 D12 D11 D10 D9 D8
D7 D6 D5 D4 D3 D2 D1 D0
Serial Number (SN) Registers
Addresses:
0x0E (SN3)
0x0F (SN2)
0x10 (SN1)
0x11 (SN0)
Register update rate:
Not applicable
Scale factor:
Not applicable
The serial number registers contain a 32-bit identification number
that uniquely identifies the device. To read the entire serial number,
two memory read requests must be initiated. The first read
request to Register 0x0E returns the upper 16 bits of the serial
number, and the following read request to Register 0x10 returns
the lower 16 bits of the serial number.
MSB LSB
D31 D30 D29 D28 D27 D26 D25 D24
D23 D22 D21 D20 D19 D18 D17 D16
D15 D14 D13 D12 D11 D10 D9 D8
D7 D6 D5 D4 D3 D2 D1 D0
Dynamic Null Correction (DNC) Registers
Addresses:
0x12 (DNC1)
0x13 (DNC0)
Register update rate:
Not applicable
Scale factor:
80 LSB/°/sec
The dynamic null correction register is the only register with
write access available to the user. The user can make small
adjustments to the rateout of the device by asserting these bits.
This 10-bit register allows the user to adjust the static rateout of
the device by up to ±6.4°/sec.
MSB
LSB
(Unused) D9 D8
D7 D6 D5 D4 D3 D2 D1 D0
Data Sheet ADXRS450
Rev. C | Page 23 of 28
PACKAGE ORIENTATION AND LAYOUT INFORMATION
08952-004
ADXRS450
(PACKAGE FRONT)
1
14
8
7
NOTES
1. THE LCC_V PACKAGE HAS TWO TERMINALS ON TWO F ACES; HOWEVER, THE TERMINALS O N THE BACK
SI DE ARE FOR INT ERNAL EVALUATIO N ONL Y AND SHOULD NOT BE USED I N THE EN D APPLICATI ON. THE
TE RMINALS ON T HE BO TTOM OF THE PACKAG E INCO RP ORAT E METALLIZ ATI ON BUMP S THAT ENSURE A
MINIMUM SOLDER THICKNESS FO R IMPROVED SOL DER JOINT RELIABILITY. THESE BUMPS ARE NOT
PRESENT ON THE BACK SIDE TERMINALS AND, THEREFORE, POOR S OL DE R J OINT RELI A BIL IT Y CAN B E
ENCOUNTERED IF USED IN THE END APPLICATION. SEE THE OUTLI NE DIMENSIONS SECTION FOR A
SCHEM ATI C OF THE LCC_V P ACKAGE.
Figure 26. 14-Terminal Ceramic LCC_V Vertical Mount
9
.462
11.232
1.27
08952-022
0.572
1.691
Figure 27. Sample SOIC_CAV Solder Pad Layout (Land Pattern), Dimensions
Shown In Millimeters, Not To Scale
08952-024
1.55
1.5 1.5
1 1
0.80.8
1.55
0.95 0.95
0.55 0.55
0.55
2.55
5.55
2.55
Figure 28. LCC_V Solder Pad Layout, Dimensions Shown In Millimeters,
Not To Scale
ADXRS450 Data Sheet
Rev. C | Page 24 of 28
SUPPLIER T
P
T
C
SUPPLIER
t
P
USER T
P
T
C
USER
t
P
T
C
T
P
T
L
25
T
C
–5°C
t
S
T
SMIN
T
SMAX
PREHEAT AREA
MAXIMUM RAMP-UP RATE = 3°C/sec
MAXIMUM RAMP-DOWN RATE = 6°C/sec
08952-026
TIME 25°C TO PEAK
t
P
T
C
–5°C
t
L
TEMPERATURE
TIME
Figure 29. Recommended Soldering Profile
Table 17. Solder Profile Conditions
Profile Feature
Conditions
Sn63/Pb37 Pb Free
Average Ramp Rate (TL to TP) 3°C/sec maximum
Preheat
Minimum Temperature (TSMIN) 100°C 150°C
Maximum Temperature (TSMAX) 150°C 200°C
Time (TSMIN to TSMAX) (tS) 60 sec to 120 sec 60 sec to 120 sec
TSMAX to TL
Ramp-Up Rate 3°C/sec maximum
Time Maintained above Liquidous
Liquidous Temperature (TL) 183°C 217°C
Time (tL) 60 sec to 150 sec 60 sec to 150 sec
Peak Temperature (TP) 240°C + 0°C/−5°C 260°C + 0°C/−5°C
Time Within 5°C of Actual Peak Temperature (tP) 10 sec to 30 sec 20 sec to 40 sec
Ramp-Down Rate 6°C/sec maximum
Time 25°C to Peak Temperature 6 minutes maximum 8 minutes maximum
Data Sheet ADXRS450
Rev. C | Page 25 of 28
PACKAGE MARKING CODES
XRS450
BEYZ n
#YYWW
LLLLLLLLL
XRS450
BRGZ n
#YYWW
LLLLLLLLL
08952-027
Figure 30. LCC_V and SOIC_CAV Package Marking Codes
Table 18. Package Code Designations
Marking Significance
XRS Angular rate sensor
450 Series number
B Temperature Grade (40°C to +105°C)
RG Package designator (SOIC_CAV package)
EY Package designator (LCC_V package)
Z RoHS compliant
n Revision number
# Pb-Free designation
YYWW Assembly date code
LLLLLLLLL Assembly lot code (up to 9 characters)
ADXRS450 Data Sheet
Rev. C | Page 26 of 28
OUTLINE DIMENSIONS
16
18
9
3.73
3.58
3.43
0.28
0.18
0.08 0.75
0.70
0.65
0.58
0.48
0.38
0.87
0.77
0.67
1.50
1.35
1.20
10.30 BS C
9.59 B S C
1.27 BSC
10.42
BSC
7.80
BSC 0.25 GAGE
PLANE
METAL CAP
DETAIL A
DETAIL A
C
OPLANARITY
0.10
0.50
0.45
0.40
PIN 1
INDICATOR
01-30-2013-
B
SIDE VIEW END VIEW
TOP VIEW
Figure 31. 16-Lead Small Outline, Plastic Cavity Package [SOIC_CAV]
(RG-16-1)
Dimensions shown in millimeters
04-08-2010-A
1 2 345 6 7
12345 67
14 13 12 11 10 98
9.20
9.00 SQ
8.80
7.18
7.10
7.02
8.08
8.00
7.92
0.350
0.305
0.260
4.40
4.00
3.60
7.70
7.55
7.40
0.275
REF
1.175
REF 0.675 NOM
0.500 MIN
0.50
TYP
0.30
REF
0.30
REF
C0.30
REF
1.70
REF
(ALL PINS)
1.70
REF
(ALL PINS)
1.00
(PINS 2, 6)
1.40
(PINS 1,
7, 8, 14)
0.60
(PINS 3-5)
1.60
(PINS 1, 7)
0.40
(PINS 3-5, 10-12)
0.80
(PINS 2, 6,
9, 13)
0.80 REF
(METALLIZATION BUMP
BUMP HEIGHT 0.03 NOM)
BOTTOM VIEW (PADS SIDE)
FRONT
V
IEW
SIDE VIEW
BACK VIEW
0.35
REF
0.35
REF
89
10 11 12 13 14
R0.20
REF 1.50
(PINS 2, 6)
1.00
(PINS 9-10,
12-13)
0.80
(PINS 10,
11, 12)
TERMINALS ON BACK SIDE
OF PACKAGE ARE FOR
EVALUATION TESTING ONLY.
Figure 32. 14-Terminal Ceramic Leadless Chip Carrier [LCC_V]
(EY-14-1)
Dimensions shown in millimeters
Data Sheet ADXRS450
Rev. C | Page 27 of 28
ORDERING GUIDE
Model1 Temperature Range Package Description
Package
Option
ADXRS450BEYZ 40°C to +105°C 14-Terminal Ceramic Leadless Chip Carrier, Vertical Form [LCC_V] EY-14-1
ADXRS450BEYZ-RL 40°C to +105°C 14-Terminal Ceramic Leadless Chip Carrier, Vertical Form [LCC_V] EY-14-1
ADXRS450BRGZ 40°C to +105°C 16-Lead Small Outline, Plastic Cavity Package [SOIC_CAV] RG-16-1
ADXRS450BRGZ-RL 40°C to +105°C 16-Lead Small Outline, Plastic Cavity Package [SOIC_CAV] RG-16-1
EVAL-ADXRS450Z Evaluation Board SOIC_CAV
EVAL-ADXRS450Z-V Evaluation Board LCC_V
EVAL-ADXRS450Z-M Analog Devices Inertial Sensor Evaluation System (Includes ADXRS450 Satellite)
EVAL-ADXRS450Z-S ADXRS450 Satellite, Standalone, to be used with Inertial Sensor Evaluation System
1 Z = RoHS Compliant Part.
ADXRS450 Data Sheet
Rev. C | Page 28 of 28
NOTES
©20112013 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D08952-0-5/13(C)
Mouser Electronics
Authorized Distributor
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