DISCRETE SEMICONDUCTORS DATA SHEET BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1998 Mar 11 2010 Sep 15 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1 emitter High transition frequency 2 base Emitter is thermal lead 3 emitter Low feedback capacitance. 4 collector APPLICATIONS RF front end handbook, halfpage Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) 3 4 Radar detectors Pagers 2 Satellite television tuners (SATV) Top view 1 MSB842 High frequency oscillators. Marking code: P5* * = - : made in Hong Kong * = p : made in Hong Kong * = t : made in Malaysia DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 10 V VCBO collector-base voltage VCEO collector-emitter voltage open base 4.5 V IC collector current (DC) 25 30 mA mW open emitter Ptot total power dissipation Ts 103 C 135 hFE DC current gain IC = 25 mA; VCE = 2 V; Tj = 25 C 50 80 120 Cre feedback capacitance IC = 0; VCB = 2 V; f = 1 MHz 95 fF fT transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 25 GHz Gmax maximum power gain IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 20 dB F noise figure IC = 2 mA; VCE = 2 V; f = 2 GHz; S = opt 1.2 dB CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2010 Sep 15 2 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 10 V VCEO collector-emitter voltage open base 4.5 V VEBO emitter-base voltage open collector 1 V IC collector current (DC) 30 mA Ptot total power dissipation 135 mW Tstg storage temperature 65 +150 C Tj operating junction temperature 150 C Ts 103 C; note 1; see Fig.2 Note 1. Ts is the temperature at the soldering point of the emitter pins. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point MGG681 200 handbook, halfpage Ptot (mW) 150 100 50 0 0 40 80 120 160 Ts (C) Fig.2 Power derating curve. 2010 Sep 15 3 VALUE UNIT 350 K/W NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IC = 2.5 A; IE = 0 V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0 V(BR)EBO emitter-base breakdown voltage IE = 2.5 A; IC = 0 MIN. TYP. MAX. UNIT 10 V 4.5 V 1 V nA ICBO collector-base leakage current IE = 0; VCB = 4.5 V 15 hFE DC current gain IC = 25 mA; VCE = 2 V; see Fig.3 50 80 120 Cc collector capacitance IE = ie = 0; VCB = 2 V; f = 1 MHz 300 Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 575 fF Cre feedback capacitance IC = 0; VCB = 2 V; f = 1 MHz; see Fig.4 95 fF fT transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Fig.5 25 GHz Gmax maximum power gain; note 1 IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Figs 7 and 8 20 dB insertion power gain IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C; see Fig.8 17 dB noise figure IC = 2 mA; VCE = 2 V; f = 900 MHz; S = opt; see Fig.13 0.8 dB IC = 2 mA; VCE = 2 V; f = 2 GHz; S = opt; see Fig.13 1.2 dB S 21 2 F fF PL1 output power at 1 dB gain compression IC = 25 mA; VCE = 2 V; f = 2 GHz; ZS = ZS opt; ZL = ZL opt; note 2 12 dBm ITO third order intercept point IC = 25 mA; VCE = 2 V; f = 2 GHz; ZS = ZS opt; ZL = ZL opt; note 2 22 dBm Notes 1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8. 2. ZS is optimized for noise; ZL is optimized for gain. 2010 Sep 15 4 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W MGG682 120 MGG683 200 handbook, halfpage handbook, halfpage Cre (fF) hFE 160 (1) (2) (3) 80 120 80 40 40 0 0 0 10 20 30 40 IC (mA) 0 1 (1) VCE = 3 V. (2) VCE = 2 V. (3) VCE = 1 V. IC = 0; f = 1 MHz. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. MGG684 25 2 3 4 5 VCB (V) Feedback capacitance as a function of collector-base voltage; typical values. MGG685 30 handbook, halfpage handbook, halfpage fT (GHz) MSG (dB) 20 20 15 10 10 5 0 1 10 IC (mA) 0 102 0 10 VCE = 2 V; f = 2 GHz; Tamb = 25 C. VCE = 2 V; f = 900 MHz. Fig.5 Fig.6 Transition frequency as a function of collector current; typical values. 2010 Sep 15 5 20 30 IC (mA) 40 Maximum stable gain as a function of collector current; typical values. NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W MGG687 MGG686 30 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) MSG 40 MSG Gmax 20 30 S21 Gmax 20 10 10 0 0 0 10 20 30 IC (mA) 40 VCE = 2 V; f = 2 GHz. Fig.7 102 10 103 104 IC = 25 mA; VCE = 2 V. Gain as a function of collector current; typical values. Fig.8 Gain as a function of frequency; typical values. 90 handbook, full pagewidth 1.0 1 135 0.8 45 2 0.5 0.6 0.2 0.4 5 0.2 3 GHz 180 0.2 0 0.5 1 2 5 0 0 40 MHz 5 0.2 0.5 2 -135 -45 1 1.0 -90 MGG689 IC = 25 mA; VCE = 2 V; Zo = 50 Fig.9 Common emitter input reflection coefficient (S11); typical values. 2010 Sep 15 f (MHz) 6 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W 90 handbook, full pagewidth 135 45 3 GHz 40 MHz 180 50 40 30 20 0 10 -135 -45 -90 MGG690 IC = 25 mA; VCE = 2 V. Fig.10 Common emitter forward transmission coefficient (S21); typical values. 90 handbook, full pagewidth 135 45 3 GHz 0.5 0.4 0.3 0.2 0.1 180 0 40 MHz -135 -45 -90 MGG691 IC = 25 mA; VCE = 2 V. Fig.11 Common emitter reverse transmission coefficient (S12); typical values. 2010 Sep 15 7 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W 90 handbook, full pagewidth 1.0 1 135 0.8 45 2 0.5 0.6 0.2 0.4 5 0.2 180 0.2 0 0.5 1 2 5 0 0 5 3 GHz 0.2 40 MHz 0.5 2 -135 -45 1 1.0 -90 MGG692 IC = 25 mA; VCE = 2 V; Zo = 50 Fig.12 Common emitter output reflection coefficient (S22); typical values. Noise data VCE = 2 V; typical values. f (MHz) 900 2000 IC (mA) Fmin (dB) mag angle rn () 1 0.7 0.67 19.1 0.40 2 0.8 0.48 17.8 0.27 4 1 0.28 11.7 0.24 10 1.4 0.02 63.9 0.19 15 1.6 0.11 162.4 0.18 20 1.9 0.19 165.5 0.18 25 2.1 0.25 166.3 0.19 30 2.3 0.29 166.5 0.19 Fmin (dB) 2 (1) 1 1.3 0.56 57.5 0.36 2 1.2 0.43 57.2 0.25 4 1.2 0.22 60.8 0.18 10 1.6 0.06 137.4 0.19 15 1.9 0.13 162.1 0.20 20 2.2 0.17 155.5 0.20 25 2.5 0.22 152.2 0.21 30 2.8 0.27 150.8 0.25 2010 Sep 15 MGG688 3 handbook, halfpage (2) 1 0 0 10 20 IC (mA) 30 (1) VCE = 2 V; f = 2 GHz. (2) VCE = 2 V; f = 900 MHz. Fig.13 Minimum noise figure as a function of the collector current; typical values. 8 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W SPICE parameters for the BFG425W die SEQUENCE No. PARAMETER VALUE SEQUENCE No. UNIT (2)(3) PARAMETER VALUE UNIT 1 IS 47.17 aA 39 Cbp 145 fF 2 BF 145.0 40 (2) Rsb1 25 Rsb2 19 3 NF 0.993 41 (3) 4 VAF 31.12 V Notes 5 IKF 304.0 mA 6 ISE 300.2 fA 1. These parameters have not been extracted, the default values are shown. 7 NE 3.000 8 BR 11.37 9 NR 0.985 10 VAR 1.874 V 11 IKR 0.121 A 12 ISC 484.8 aA 13 NC 1.546 14 RB 14.41 15 IRB 0.000 A 16 RBM 6.175 17 RE 177.9 m 18 RC 1.780 XTB 1.500 (1) EG 1.110 eV 21 (1) XTI 3.000 22 CJE 310.9 fF 23 VJE 900.0 mV 24 MJE 0.346 25 TF 4.122 ps 19 (1) 20 2. Bonding pad capacity Cbp in series with substrate resistance Rsb1 between B and E. 3. Bonding pad capacity Cbp in series with substrate resistance Rsb2 between C and E. C cb handbook, halfpage L1 B L2 B' C' E' C be C Cce MGD956 L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc) fc = scaling frequency = 1 GHz. 26 XTF 68.20 27 VTF 2.004 V 28 ITF 1.525 A 29 PTF 0.000 deg 30 CJC 137.7 fF 31 VJC 556.9 mV Cbe 80 fF 32 MJC 0.207 Ccb 2 fF 33 XCJC 0.500 Cce 80 fF 1.1 nH Fig.14 Package equivalent circuit SOT343R2. List of components (see Fig.14) DESIGNATION VALUE UNIT 34 (1) TR 0.000 ns L1 35 (1) CJS 667.5 fF L2 1.1 nH 36 (1) VJS 418.3 mV L3 (note 1) 0.25 nH 37 (1) MJS 0.239 38 FC 0.550 2010 Sep 15 Note 1. External emitter inductance to be added separately due to the influence of the printed-circuit board. 9 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W PACKAGE OUTLINE Plastic surface-mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 06-03-16 SOT343R 2010 Sep 15 EUROPEAN PROJECTION 10 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe 2010 Sep 15 11 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. 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