MMST2222A
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMST2907A)
• Lead Free/RoHS Compliant (Note 2)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Terminal Connections: See Diagram
• Marking Information: K3P - See Page 4
• Ordering & Date Code Information: See Page 4
• Weight: 0.006 grams (approximate)
SOT-323
Dim Min Max
A 0.25 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.18
α 0° 8°
All Dimensions in mm
A
M
JL
ED
BC
H
K
G
BE
C
E
B
C
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current – Continuous (Note 1) IC600 mA
Power Dissipation (Note 1) Pd200 mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 625 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30080 Rev. 9 - 2 1 of 4
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage V(BR)CBO 75 ⎯ V IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 10μA, IC = 0
Collector Cutoff Current ICBO ⎯ 10 nA
μA VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150°C
Collector Cutoff Current ICEX ⎯ 10 nA VCE = 60V, VEB(OFF) = 3.0V
Emitter Cutoff Current IEBO ⎯ 10 nA VEB = 3.0V, IC = 0
Base Cutoff Current IBL ⎯ 20 nA VCE = 60V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 5)
DC Current Gain hFE
35
50
75
100
40
50
35
⎯
⎯
⎯
300
⎯
⎯
⎯
⎯
IC = 100μA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.3
1.0 V IC = 150mA, IB = 15mA B
IC = 500mA, IBB = 50mA
Base-Emitter Saturation Voltage VBE(SAT) 0.6
⎯
1.2
2.0 V IC = 150mA, IB = 15mA B
IC = 500mA, IBB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ⎯ 8 pF VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance Cibo ⎯ 25 pF VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwith Product fT300 ⎯ MHz VCE = 20V, IC = 20mA,
f = 1.0MHz
Noise Figure NF ⎯ 4.0 dB VCE = 10V, IC = 100μA,
RS = 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td⎯ 10 ns
Rise Time tr⎯ 25 ns VCC = 30V, IC = 150mA,
VBE(OFF) = -0.5V, IB1 = 15mA
Storage Time ts⎯ 225 ns
Fall Time tf⎯ 60 ns VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
5. Short duration pulse test used to minimize self-heating effect.
0
50
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
100
150
200
0
1
10
1,000
100
0.1 110 1,000
100
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs.Collector Current
C
DS30080 Rev. 9 - 2 2 of 4
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1.0
5.0
20
30
10
0.1 101.0 50
C
A
P
A
C
I
T
AN
C
E (p
F
)
V , REVERSE VOL T S (V)
Fig. 3 Typical Capaci t ance C har a cte r is ti cs
R
100
0.001 0.01 110
0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
B
V,
C
O
LLE
C
T
O
R
-EMITTE
R
V
O
LTA
G
E (V)
CE
110 100 1,000
V,
C
O
LLE
C
T
O
R
T
O
EMI
T
T
E
R
SATU R ATIO N VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 5 Collector-Emitter Saturation Voltage
vs. C ollector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B
= 10
10.1 10 100
V , BASE EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fi g. 6 Bas e - E m it ter Voltage vs. C ol lec t or Cur re nt
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9
1
10
100
1,000
110
I , COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
C
f,
100
G
AI
N
BA
N
D
WI
D
T
H
P
R
O
D
U
C
T (
M
H
z)
T
V= 5V
CE
DS30080 Rev. 9 - 2 3 of 4
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© Diodes Incorporated
Ordering Information (Notes 4 & 6)
Device Packaging Shipping
MMST2222A-7-F SOT-323 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K3P
YM
K3P = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = Se
p
tembe
r
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30080 Rev. 9 - 2 4 of 4
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