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September, 2015 − Rev. 16 1Publication Order Number:

TIP31A/D

TIP31G, TIP31AG, TIP31BG,

TIP31CG (NPN),

TIP32G,TIP32AG, TIP32BG,

TIP32CG(PNP)

Complementary Silicon

Plastic Power Transistors

Designed for use in general purpose amplifier and switching

applications.

Features

•High Current Gain − Bandwidth Product

•Compact TO−220 Package

•These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage

TIP31G, TIP32G

TIP31AG, TIP32AG

TIP31BG, TIP32BG

TIP31CG, TIP32CG

VCEO 40

100

Vdc

Collector−Base Voltage

TIP31G, TIP32G

TIP31AG, TIP32AG

TIP31BG, TIP32BG

TIP31CG, TIP32CG

VCB 40

100

Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current − Continuous IC3.0 Adc

Collector Current − Peak ICM 5.0 Adc

Base Current IB1.0 Adc

Total Power Dissipation

@ TC = 25°C

Derate above 25°C

PD40

0.32 W

W/°C

Total Power Dissipation

@ TA = 25°C

Derate above 25°C

PD2.0

0.016 W

W/°C

Unclamped Inductive Load Energy

(Note 1) E 32 mJ

Operating and Storage Junction Tem-

perature Range TJ, Tstg –65 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W

Thermal Resistance, Junction−to−Case RqJC 3.125 °C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−220

CASE 221A

STYLE 1

MARKING DIAGRAM

3 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

40−60−80−100 VOLTS,

40 WATTS

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123

TIP3xx = Device Code

xx = 1, 1A, 1B, 1C,

2, 2A, 2B, 2C,

A = Assembly Location

Y = Year

WW = Work Week

G Pb−Free Package

TIP3xxG

AYWW

See detailed ordering and shipping information on page 6 o

this data sheet.

ORDERING INFORMATION

BASE

EMITTER

COLLECTOR

2,4

BASE

EMITTER

COLLECTOR

2,4

NPNPNP

TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,

TIP32CG (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 30 mAdc, IB = 0)

TIP31G, TIP32G

TIP31AG, TIP32AG

TIP31BG, TIP32BG

TIP31CG, TIP32CG

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

TIP31G, TIP32G, TIP31AG, TIP32AG

(VCE = 60 Vdc, IB = 0)

TIP31BG, TIP31CG, TIP32BG, TIP32CG

ICEO

−

0.3

mAdc

Collector Cutoff Current

(VCE = 40 Vdc, VEB = 0)

TIP31G, TIP32G

(VCE = 60 Vdc, VEB = 0)

TIP31AG, TIP32AG

(VCE = 80 Vdc, VEB = 0)

TIP31BG, TIP32BG

(VCE = 100 Vdc, VEB = 0)

TIP31CG, TIP32CG

ICES

−

200

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 3.0 Adc, VCE = 4.0 Vdc)

hFE 25

10 −

−

Collector−Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 375 mAdc) VCE(sat) − 1.2 Vdc

Base−Emitter On Voltage

(IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) − 1.8 Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT3.0 − MHz

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 − −

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,

TIP32CG (PNP)

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Figure 1. Power Derating

T, TEMPERATURE (°C)

0 100

1.0

160

2.0

3.0

60 80

40 140

4.0

TURN−ON PULSE

APPROX

+11 V

Vin 0

VEB(off) t1

APPROX

+11 V

Vin

TURN−OFF PULSE

t1 ≤ 7.0 ns

100 < t2 < 500 ms

t3 < 15 ns

DUTY CYCLE ≈ 2.0%

APPROX −9.0 V

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.

SCOPE

VCC

Vin

Cjd << Ceb

−4.0 V

Figure 2. Switching Time Equivalent Circuit

0.03

Figure 3. Turn−On Time

IC, COLLECTOR CURRENT (AMP)

0.02 0.1 3.0

0.07

1.0

IC/IB = 10

TJ = 25°C

tr @ VCC = 10 V

0.5

0.3

0.1

0.05

0.05 0.3 0.5

td @ VEB(off) = 2.0 V

0.03

0.7

2.0

tr @ VCC = 30 V

20 120

PD, POWER DISSIPATION (WATTS)

t, TIME (ms)

TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,

TIP32CG (PNP)

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t, TIME (ms)

1.0

0.01

0.1

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 1.0 100

ZqJC(t) = r(t) RqJC

RqJC(t) = 3.125°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZqJC(t)

P(pk)

SINGLE PULSE

1.0 k

D = 0.5

0.05

DUTY CYCLE, D = t1/t2

Figure 4. Thermal Response

0.1

0.05

0.03

0.02

0.07

0.5

0.3

0.2

0.7

0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50

0.2

0.02

0.01

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

10 205.0 50 100

Figure 5. Active Region Safe Operating Area

0.2

0.1

0.5

SECONDARY BREAKDOWN

LIMITED @ TJ ≤150°C

THERMAL LIMIT @ TC = 25°C

(SINGLE PULSE)

BONDING WIRE LIMIT

1.0ms

100ms

2.0

1.0

5.0

IC, COLLECTOR CURRENT (AMP)

5.0ms

CURVES APPLY

BELOW RATED VCEO

TIP31A, TIP32A

TIP31B, TIP32B

TIP31C, TIP32C

There are two limitations on the power handling ability o f

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150°C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

≤ 150°C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

0.05 0.1 0.2 0.70.03 0.3 0.50.07

IC, COLLECTOR CURRENT (AMP)

Figure 6. Turn−Off Time

3.0

t, TIME (s)μ

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

1.0 2.0 3.0 0.2 0.5 1.0 5.00.1 2.0 3.00.3

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

300

CAPACITANCE (pF)

200

100

10 20 4030

tf @ VCC = 30 V

tf @ VCC = 10 V

ts′

IB1 = IB2

IC/IB = 10

ts′ = ts - 1/8 tf

TJ = 25°C

TJ = +25°C

Ceb

Ccb

TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,

TIP32CG (PNP)

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VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (°C)

103

-0.4

101

100

10-2

102

10-1

10-3

107

105

104

102

106

103

IB, BASE CURRENT (mA)IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (AMP)

300

500

0.05 0.07 0.3 3.00.03

100

7.0

0.1

VBE, BASE−EMITTER VOLTAGE (VOLTS)

Figure 10. “On” Voltages

VCE = 2.0 V

5.0 0.7 1.00.5

1.6

2.0

2.0 5.0 20 10001.0

0.8

0.4

0100 200 50050

25°C

TJ = 150°C

-55°C1.2

1.4

0.003

IC, COLLECTOR CURRENT (AMPS)

1.0

0.8

0.4

1.2

0.6

0.2

00.005 0.01 0.02 0.03 0.05 0.1

+2.5

IC = 0.3 A

20 60 80 100 120 16014040

V, VOLTAGE (VOLTS)

TJ = 25°C

1.0 A 3.0 A

0.2 0.3 0.5 1.0 2.0 3.0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE @ VCE = 2.0 V

VCE(sat) @ IC/IB = 10

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

+2.0

+1.5

+1.0

+0.5

-0.5

-1.0

-1.5

-2.0

-2.5

0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0

*APPLIES FOR IC/IB ≤ hFE/2

TJ = -65°C TO +150°C

*qVC FOR VCE(sat)

qVB FOR VBE

Figure 11. Temperature Coefficients

, COLLECTOR CURRENT (A)μIC

-0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6

Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

ICES

RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)

VCE = 30 V

IC = 10 x ICES

IC ≈ ICES

IC = 2 x ICES

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)

TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,

TIP32CG (PNP)

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ORDERING INFORMATION

Device Package Shipping

TIP31G TO−220

(Pb−Free) 50 Units / Rail

TIP31AG TO−220

(Pb−Free) 50 Units / Rail

TIP31BG TO−220

(Pb−Free) 50 Units / Rail

TIP31CG TO−220

(Pb−Free) 50 Units / Rail

TIP32G TO−220

(Pb−Free) 50 Units / Rail

TIP32AG TO−220

(Pb−Free) 50 Units / Rail

TIP32BG TO−220

(Pb−Free) 50 Units / Rail

TIP32CG TO−220

(Pb−Free) 50 Units / Rail

TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,

TIP32CG (PNP)

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PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AH

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.415 9.66 10.53

C0.160 0.190 4.07 4.83

D0.025 0.038 0.64 0.96

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.024 0.36 0.61

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

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USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

TIP31A/D

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