3236 Scott Boulevard Santa Clara, California 95054 Phone: (408) 986-5060 Fax: (408) 986-5095
CGB7012-SC (-BD)
Features
❏36.0 dBm Output IP3 @ 850 MHz
❏4.3 dB Noise Figure @ 850 MHz
❏15.7 dB Gain @ 850 MHz
❏20.3 dBm P1dB @ 850 MHz
❏Low Performance Variation Over Temperatur e
❏Low Cost: Die Form or SOT-89 Package
❏100% DC On-Wafer Testing
❏ESD Protection on All Die: >1000V HBM
❏Low Thermal Resistance: <80°C/Watt
Applications
❏PA Driver Amp, IF Amp, LO Buffer Amp
❏Cellular, PCS, GSM, UMTS
❏Wireless Data and SATCOM
❏Transmit and Receive Functions
Description
The CGB7012-SC (-BD) is a Darlington Configured,
high dynamic range, utility gain block amplifier. Designed for
applications operating within the 0.1 GHz to 6.0 GHz frequency
range, Celeritek’s broadband, cascadable, gain block amplifiers
are ideal solutions for transmit, receive and IF applications.
These MMIC amplifiers are available in bare die form or
an industry standard SOT-89 package. The CGB7012-SC (-BD)
is fabricated in Celeritek’s in-house foundry. Celeritek’s InGaP
HBT technology and an industry low thermal resistance offers
a thermally robust and reliable gain block solution.
The InGaP HBT die have extra pads to enable thor-
ough DC testing. This unique test capability and the inclusion
of ESD protection on all die, significantly enhances the quali-
ty, reliability and ruggedness of these products.
With a single bypass capacitor, optional RF choke
and two DC blocking capacitors, this gain block amplifier
offers significant ease of use in a broad range of applications.
0.1 GHz to 6.0 GHz
InGaP HBT, MMIC or Packaged,
Matched Gain Block Amplifier
Advanced Product Information
June 2004 V1.0 (1 of 7)
Functional Block Diagram (SOT-89)
Absolute Maximum Ratings Operation of this device above any of these parameters may cause damage.
Parameter Rating Parameter Rating Parameter Rating
Max Device Voltage +6.0 V RF Input Power +17 dBm Operating Temperature -40°C to +85°C
Max Device Current 130 mA Storage Temperature -55°C to +150°C Thermal Resistance 80°C/W
Max Device Dissipated Pwr 0.65 W Junction Temperature 150°C ESD (HBM) 1000 V
Electrical Characteristics
Unless otherwise specified, the following specifications are guaranteed at room temperature in a Celeritek test fixture.
Notes: 1. Test Conditions in Celeritek eval board, Vs = 8 V, Id = 86 mA Typ., Rbias = 30 Ω, Zs = Zl = 50Ω, OIP3 tone spacing = 1 MHz, Pout per tone = 6 dBm.
2. Values reflect performance in recommended application circuit.
850 MHz 1950 MHz 2400 MHz 3500 MHz
Parameter Temperature (°C) Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Small Signal Gain +25 14.5 15.7 16.9 13.3 14.5 15.7 12.7 13.9 15.1 13.2 dB
-40 to +85 14.3 15.7 17.1 13.1 14.5 15.9 12.5 13.9 15.3 13.2 dB
Output P1dB +25 19.3 20.3 17.9 18.9 16.9 17.9 15.1 dBm
-40 to +85 19.0 20.3 17.6 18.9 16.6 17.9 15.1 dBm
Output IP3 +25 34.5 36.0 31.5 33.0 29.8 31.3 27.2 dBm
-40 to +85 33.0 36.0 30.5 33.0 28.8 31.0 27.2 dBm
Noise Figure +25 4.3 5.1 4.5 5.3 4.6 5.4 4.7 dB
-40 to +85 4.3 5.5 4.5 5.7 4.6 5.8 4.7 dB
Operating Current +25 82 86 90 82 86 90 82 86 90 86 mA
-40 to +85 77 86 95 77 86 95 77 86 95 86 mA
Input Return Loss +25 17 21 11 16 12 15 13 dB
-40 to +85 16 21 10 16 11 15 13 dB
Output Return Loss +25 17.0 22.0 12.0 16.0 11.0 15.0 20.0 dB
-40 to +85 16.0 22.0 11.0 16.0 10.0 15.0 20.0 dB
Pout @ -45 dBc ACP, +25 14 13 dBm
IS-95, 9 Forward Channels -40 to +85 14 13 dBm
Input Ground Output
Bias
Ground
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