; | 5642214 M/A- COM SEMICONDUCTOR q3 DE Bf soueens ooogsee 4 i 7- o7-(9 ~ NS lal tp ui MA-4K000 Series Abrupt Junction High Capacitance Silicon Tuning Varactors For General Tuning and AFC Applications Description Features The MA-4K000 series of silicon tuning varactors HIGH BREAKDOWN VOLTAGE is designed for tuning applications through VHF. 7 The dependence of the depletion region width on EHIGH Q reverse voltage provides the basis for the m@ THERMAL OXIDE PASSIVATED capacitance versus reverse bias characteristics of the devices. @ HIGH RELIABILITY Low leakage, high Q, lot uniformity, and high Hi CUSTOM VOLTAGE BREAKDOWN reliability are some of the desirable features of AND CAPACITANCE th id ivated epitaxial tuni - tors. A choice of either cpoxy coated or hermetic &% CUSTOM PACKAGING ceramic packaging is available. AVAILABLE Applications These devices are useful for general tuning for radios, TV, and AFC applications from the HF to the VHF frequency range. M/A-COM Semiconductor Products, Inc.E3 Burlington, Massachusetts 01803 Ml Telephone (617) 272-3000 Ml TWX: 710-332-6789 a Telex: 94- 9464 Bulletin No. 4607 / 2976 c-032 5642214 M/A-COM SEMICONDUCTOR 43 DEBpsb42214 oooosaa o T=O1-19 Specifications at TA = 25C ELECTRICAL CHARACTERISTICS Breakdown Voltage - VB! = 120V MA MA MA MA MA MA MA MA MA MA MA Model Number 4koe1{ 4Koes | 4Kko6e7 | 4K068} 4K069| 4KO70| 4KO71| 4K072 | 4K073 | 4KO74| 4K075 Typ. Capacitance Cr. (pf) 50 100 125 150 200 250 300 400 500 750 1000 Min. Cap. Ratio Cy.9/Ctyp| 4.5 48 5.0 5.0 5.3 5.5 5.5 5.5 5.7 5.7 5.7 Min. Q.,' f = 20 MHz 200 200 175 175 150 150 150 100 100 80 70 Max. Leakage Current (nA)| 500 500 500 500 500 500 500 500 500 500 500 Breakdown Voltage - Vp! = 90V MA MA MA MA MA MA MA MA MA MA MA Model Number 4ko4a6 | 4ko51 | 4K052 | 4k053 | 4K054 | 4K055{| 4K056 | 4K057 | 4K058 | 4K059 | 4K060 Typ. Capacitance Cy.g (pf) | 50 100 125 150 200 250 300 400 500 750 1000 Min. Cap. Ratio Cy.9/Cryp] 4.2 4.5 47 4.9 5.2 5.2 5.3 5.3 5.5 5.5 5.5 Min. Q.,' f = 20 MHz 200 200 175 175 150 150 150 100 100 80 70 Max. Leakage Current (nA)| 500 500 500 500 500 500 500 500 500 500 500 Breakdown Voltage - VB! = 60V MA MA MA MA MA MA MA MA MA MA MA | Model Number 4K031 | 4K036 | 4K037 {| 4K038 | 4KO39 | 4K040] 4K041} 4K042 | 4K043 4K044 | 4K045 Typ. Capacitance Cy.g (pf) | 50 100 125 150 200 250 300 400 500 750 4000 Min. Cap. Ratio Cy.2/Cpypg| 4.0 4.2 4.4 44 4.6 46 4.8 4.8 5.0 5.0 5.2 Min. Qa, f = 20 MHz 275 250 250 225 225 200 200 200 150 125 100 Max. Leakage Current (nA) { 500 500 500 500 500 500 500 500 500 500 500 Breakdown Voltage - Vp! = 45V MA MA MA MA MA MA MA MA MA MA MA | Model Number 4ko16 | 4Ko21 | 4K022 | 4K023 | 4KO24 | 4K025 | 4K026 | 4K027 | 4K028 | 4K029 4K030 Typ. Capacitance Cy.g (pf) | 50 400 125 150 200 250 300 400 | 500 750 4000 Min. Cap. Ratio Cy.2/Cpypg} 3.0 3.3 3.5 3.5 3.8 3.8 4.0 4.0 4.2 4.2 4.3 Min. Q.9' f = 20 MHz 300 275 250 250 250 225 225 225 175 750 125 Max. Leakage Current (nA) { 500 500 500 500 500 500 500 500 500 500 500 Breakdown Voltage - Vg = 30V MA MA MA MA MA MA MA MA MA MA MA | Mode! Number 4kKo01 | 4Koo06 | 4Ko07 | 4Ko0s | 4K009 | 4KO10 | 4KO11 | 4K012 | 4K013 | 4K014 | 4K015 Typ. Capacitance Cr.g (pf) 50 100 125 150 200 250 300 400 500 750 1000 Min. Cap. Ratio Cy.9/Cryg| 2.6 2.8 3.0 3.0 3.3 3.3 3.5 3.5 3.7 3.7 3.8 Min. Q.,' f = 20 MHz 330 300 300 300 275 275 275 250 225 200 150 Max. Leakage Current (nA) | 500 500 500 500 500 500 500 500 500 500 500 Breakdown Voltage - Vg = 200V MA MA MA . ans ineria_| ans |_insrie| Maximum Ratings Capacitance Cr.g (Pf) 150 250 500 Parameter | Max. Min. Cap Ratio! 5.8 58 58 Operating Temperature 40 to +100C Min. Og Storage Temperature 40 to +100C f = 20 MHz 225 200 150 Total Power Dissipation Max. Leakage (@ 25C in free air) 1 Watt Current (nA) 750 750 750 Maximum Working Voltage Breakdown Voltage 2977 C~045642214 M/A-COM SEMICONDUCTOR 73 DEQ 5642214 ooo005a84 2 Typical Performance Curves 09 1000 700 CAPACITANCE (pF) =0.7 VOLTS 10 Ve +@ REVERSE BIAS VOLTAGE (VOLTS) FIGURE 1. CAPACITANCE VERSUS REVERSE VOLTAGE Case Styles 184 EPOXY ree pat r I 935 HERMETIC Notes: 1. Breakdown Voltage (Vp) is measured at a reverse current of 10 pA. 2. Capacitance measured at f = 1 MHz VR = 8 Volts. 3. Capacitance ratio given is determined by CT-2 = Capacitance. @ -2 Volts CTvB Capacitance @ Breakdown Voltage 3 2978 c-05 T-07-19 600 500 9g E & 400 = & w 300 ir 5 o % 200 100 1 2 5 10 20 50 100 REVERSE BIAS VOLTAGE (VOLTS) FIGURE 2. Q VERSUS REVERSE BIAS VOLTAGE INCHES - MILLIMETERS DIM. MIN. | MAX. MIN. | MAX. A _ .30 _ 7,620 B _ .30 _ 7,620 Cc 625 _ 15,875 _ D 035 _ 0,889 E _ .170 4,318 INCHES MILLIMETERS DIM. MIN. | MAX. MIN. MAX. A .30 =. 7,620 B _ .30 7,620 Cc 625 _. 15,875 _ D 035 0,889 E _ .170 4,318 F _ .02 0,508 . Qis calculated at f = 20 MHz and VR = 8V 1 Q= 2nCrT-gRst . Leakage current (Ip) is determined at 80% of rated VB. . Achoice of either a plastic package (case style 184 or a hermetic package, case style 935, is available). To order, use the desired case style number as a suffix to the model number.