ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VDRM = 4500 V
ITGQM = 3000 A
ITSM = 24×103A
VT0 =2.2V
rT=0.6
mΩ
ΩΩ
Ω
VDclink = 2800 V
Asymmetric Gate turn-off
Thyristor
5SGA 30J4502
Doc. No. 5SYA1202-03 Jan. 03
•
••
•Patented free-floating silicon technology
•
••
•Low on-state and switching losses
•
••
•Annular gate electrode
•
••
•Industry standard housing
•
••
•Cosmic radiation withstand rating
Blocking
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Repetitive peak off-state
voltage
VDRM VGR ≥ 2 V 4500 V
Repetitive peak reverse
voltage
VRRM 17 V
Permanent DC voltage for
100 FIT failure rate
VDclink Ambient cosmic radiation at sea level
in open air.
2800 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Repetitive peak off-state
current
IDRM VD = VDRM, VGR ≥ 2 V 60 mA
Repetitive peak reverse
current
IRRM VR = VRRM, RGK = ∞ Ω 20 mA
Mechanical data
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Mounting force Fm36 40 44 kN
Characteristic values
Parameter Symbol Conditions min typ max Unit
Pole-piece diameter Dp± 0.1 mm 75 mm
Housing thickness H ± 0.5 mm 26 mm
Weight m 1.3 kg
Surface creepage distance DsAnode to Gate 33 mm
Air strike distance DaAnode to Gate 15 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
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Doc. No. 5SYA1202-03 Jan. 03 page 2 of 9
GTO Data
On-state
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Max. average on-state
current
ITAVM Half sine wave, TC = 85 °C 930 A
Max. RMS on-state current ITRMS 1460 A
Max. peak non-repetitive
surge current
ITSM 24×103A
Limiting load integral I2t
tp = 10 ms, Tvj = 125°C, sine wave
After Surge: VD = VR = 0 V
2.88×106A2s
Max. peak non-repetitive
surge current
ITSM 40×103A
Limiting load integral I2t
tp = 1 ms, Tvj = 125°C, sine wave
After Surge: VD = VR = 0 V
800×103A2s
Characteristic values
Parameter Symbol Conditions min typ max Unit
On-state voltage VTIT = 3000 A, Tvj = 125°C 4 V
Threshold voltage V(T0) 2.2 V
Slope resistance rT
Tvj = 125°C
IT = 300...4000 A 0.6 mΩ
Holding current IHTvj = 25°C 50 A
Turn-on switching
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Critical rate of rise of on-
state current
diT/dtcr f = 200 Hz 400 A/µs
Critical rate of rise of on-
state current
diT/dtcr
Tvj = 125°C,
IT = 3000 A, IGM = 30 A,
diG/dt = 20 A/µs f = 1 Hz 800 A/µs
Min. on-time ton 100 µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Turn-on delay time td3µs
Rise time tr6µs
Turn-on energy per pulse Eon
VD = 0.5 VDRM, Tvj = 125 °C
IT = 3000 A, di/dt = 200 A/µs,
IGM = 30 A, diG/dt = 20 A/µs, CS = 6
µF, RS = 5 Ω3.6 J
Turn-off switching
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Max. controllable turn-off
current
ITGQM VDM ≤ VDRM, diGQ/dt = 40 A/µs,
CS = 6 µF, LS ≤ 0.3 µH
3000 A
Min. off-time toff 80 µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Storage time tS25 µs
Fall time tf3µs
Turn-on energy per pulse Eoff 13 J
Peak turn-off gate current IGQM
VD = 0.5 VDRM, Tvj = 125 °C
VDM ≤ VDRM, diGQ/dt = 40 A/µs,
ITGQ = ITGQM,
RS = 5Ω, CS = 6 µF, LS = 0.3 µH
900 A
5SGA 30J4502
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1202-03 Jan. 03 page 3 of 9
Gate
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Repetetive peak reverse
voltage
VGRM 17 V
Repetetive peak reverse
current
IGRM VGR = VGRM
20 mA
Characteristic values
Parameter Symbol Conditions min typ max Unit
Gate trigger voltage VGT 1V
Gate trigger current IGT
Tvj = 25°C,
VD = 24 V, RA = 0.1 Ω3A
Thermal
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Junction operating temperature Tvj -40 125 °C
Storage temperature range Tstg -40 125 °C
Characteristic values
Parameter Symbol Conditions min typ max Unit
Rth(jc) Double side cooled 12 K/kW
Rth(jc)A Anode side cooled 22 K/kW
Thermal resistance junction to case
Rth(jc)C Cathode side cooled 27 K/kW
Rth(ch) Single side cooled 6 K/kWThermal resistance case to heatsink
(Double side cooled) Rth(ch) Double side cooled 3 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ithJC i
å
=
τ
i1 234
Ri(K/kW) 5.400 4.500 1.700 0.400
τi(s) 1.2000 0.1700 0.0100 0.0010
Fig. 1 Transient thermal impedance, junction to
case.
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Doc. No. 5SYA1202-03 Jan. 03 page 4 of 9
0
500
1000
1500
2000
2500
3000
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VT [V]
IT[A]
125°C
25°C
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
0 250 500 750 1000 1250 1500
ITAV [V]
PAV [kW]
DC
180° Rect.
180° Sine
120° Rect.
60° Rect.
Fig. 2 On-state characteristics. Fig. 3 Average on-state power dissipation vs.
average on-state current..
1.00
10.00
100.00
0 1 10 100
tp [ms]
ITSM [kA]
1.E+05
1.E+06
1.E+07
ò
òòòi2dt [A2s]
Conditions:
Before surge: T j = 125°C
After surge: V D = 0V
Itsm
òI2td
Fig. 4 Surge current and fusing integral vs. pulse
width.
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Doc. No. 5SYA1202-03 Jan. 03 page 5 of 9
Fig. 5 Forward blocking voltage vs. gate-cathode
resistance..
Fig. 6 Static dv/dt capability: Forward blocking
voltage vs. neg. gate voltage or gate cathode
resistance.
Fig. 7 Forward gate current vs. forard gate voltage. Fig. 8 Gate trigger current vs. junction temperature
5SGA 30J4502
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Doc. No. 5SYA1202-03 Jan. 03 page 6 of 9
Fig. 9 Turn-on energy per pulse vs. on-state current
and turn-on voltage.
Fig. 10 Turn-on energy per pulse vs. on.-state current
and current rise rate
Common Test conditions for figures 9, 10 and 11:
diG/dt = 20 A/µs
CS = 6 µF
RS = 5 Ω
Tj = 125 °C
Definition of Turn-on energy:
)0.1 I 0, (t G
20
0
GMT
s
Don IdtIVE ⋅==⋅= ò
µ
Common Test conditions for figures 12, 13 and 15:
Definition of Turn-off energy:
)0.9 I 0, t ( T
40
0
TGQT
s
Doff IdtIVE ⋅==⋅= ò
µ
Fig. 11 Turn-on energy per pulse vs. on-state current
and turn-on voltage.
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Doc. No. 5SYA1202-03 Jan. 03 page 7 of 9
0
2
4
6
8
10
12
14
16
18
0 500 1000 1500 2000 2500 3000
ITGQ [A]
Eoff [J]
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
QGQa [A]
VDM=VDRM
QGQa
Conditions:
VD = ½⋅
⋅⋅⋅VDRM
diGQ/dt = 40 A/ µ
µµ
µs
CS = 6 µ
µµ
µF, RS = 5 Ω
ΩΩ
Ω
Tj = 125°C
¾ VDRM
½ VDRM
0
2
4
6
8
10
12
14
0 500 1000 1500 2000 2500 3000
ITGQ [A]
Eoff [J]
CS = 4µ
µµ
µF
Conditions:
diGQ/dt =40 A/
µ
µµ
µs
Tj = 125 °C
CS = 3µ
µµ
µF
CS = 6µ
µµ
µF
Fig. 12 Turn-off energy per pulse vs. turn-off current
and peak turn-off voltage. Extracted gate
charge vs. turn-off current.
Fig. 13 Turn-off energy per pulse vs. turn-off current
and snubber capacitance.
1
2
3
4
5
6
1000 1500 2000 2500 3000
IGQM [A]
Cs[µ
µµ
µF]
Condition:
VD= ½⋅
⋅⋅⋅VDRM, VDM = VDRM
diGQ/dt = 40 A/
µ
µµ
µs
RS= 5 Ω
ΩΩ
Ω, LS ≤
≤≤
≤ 300 nH
0
10
20
30
40
50
0 25 50 75 100 125
ts[µ
µµ
µs]
0
200
400
600
800
1000
tS
IGQM [A]
IGQM
Condition: di
GQ/dt = 40 A/
µ
µµ
µs
Tj = 125 °C
Tj [°C]
0
6
12
18
24
30
-10 0 10 20 30 40 50 60 70 80 90 100 110 120
Eoff[J]
0
200
400
600
800
1000
IGQM [A]
Eoff
Fig. 14 Required snubber capacitor vs. max
allowable turn-off current.
Fig. 15 Turn-off energy per pulse, storage time and
peak turn-off gate current vs. junction
temperature.
0
5
10
15
20
25
30
35
40
45
50
0 102030405060
diGQ/dt [A/µ
µµ
µs]
ts[s]
0
100
200
300
400
500
600
700
800
900
1000
IGQM [A]
tS
IGQM
Conditions:
ITGQ = 3000 A
Tj = 125 °C
0
5
10
15
20
25
30
35
40
45
50
0 500 1000 1500 2000 2500 3000
ITGQ [A]
ts[s]
0
200
400
600
800
1000
IGQM [A]
tS
IGQM
Conditions:
diGQ/dt =40 A/
µ
µµ
µs
Tj = 125 °C
Fig. 16 Storage time and peak turn-off gate current
vs. neg. gate current rise rate.
Fig. 17 Storage time and peak turn-off gate current
vs. turn-off current.
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ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1202-03 Jan. 03 page 8 of 9
Fig. 18 General current and voltage waveforms with GTO-specific symbols.
Fig. 19 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
5SGA 30J4502
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1202-03 Jan. 03
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Reverse avalanche capability
In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM
due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse
avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs
and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VG
R
=
10… 15 V.
