AP4525GEH RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D1/D2 40V RDS(ON) Good Thermal Performance Fast Switching Performance S1 28m ID G1 S2 15A P-CH BVDSS G2 TO-252-4L Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. -40V RDS(ON) 42m ID -12A D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating N-channel Units P-channel VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage 16 16 V ID@TA=25 Continuous Drain Current 15.0 -12.0 A ID@TA=70 Continuous Drain Current 12.0 -10.0 A 50 -50 A 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation 10.4 W Linear Derating Factor 0.083 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 12 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 /W Data and specifications subject to change without notice 1 200809235 AP4525GEH o N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 40 - - V - 0.03 - V/ VGS=10V, ID=6A - - 28 m VGS=4.5V, ID=4A - - 32 m BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS=0V, ID=250uA Static Drain-Source On-Resistance 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=6A - 6 - S IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 1 uA Drain-Source Leakage Current (T j=70 C) VDS=32V, VGS=0V - - 25 uA Gate-Source Leakage VGS=16V - - 30 uA ID=6A - 9 14 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=20V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC 2 td(on) Turn-on Delay Time VDS=20V - 7 - ns tr Rise Time ID=6A - 20 - ns td(off) Turn-off Delay Time RG=3,VGS=10V - 20 - ns tf Fall Time RD=3.3 - 4 - ns Ciss Input Capacitance VGS=0V - 580 930 pF Coss Output Capacitance VDS=25V - 100 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance f=1.0MHz - 2 3 Min. Typ. IS=15A, VGS=0V - - 1.8 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=6A, VGS=0V - 20 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 15 - nC 2 AP4525GEH P-CH Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage -40 - - V BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA - -0.03 - V/ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A - - 42 m VGS=-4.5V, ID=-3A - - 60 m -0.8 - -2.5 V VGS=0V, ID=-250uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-10V, ID=-5A - 5 - S IDSS Drain-Source Leakage Current VDS=-40V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70 C) VDS=-32V, VGS=0V - - -25 uA Gate-Source Leakage VGS=16V - - 30 uA o IGSS 2 Qg Total Gate Charge ID=-5A - 9 24 nC Qgs Gate-Source Charge VDS=-20V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 5 - nC 2 td(on) Turn-on Delay Time VDS=-20V - 8.5 - ns tr Rise Time ID=-5A - 15 - ns td(off) Turn-off Delay Time RG=3,VGS=-10V - 27 - ns tf Fall Time RD=4 - 25 - ns Ciss Input Capacitance VGS=0V - 770 1230 pF Coss Output Capacitance VDS=-20V - 165 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 115 - pF Rg Gate Resistance f=1.0MHz - 6 9 Min. Typ. Max. Units IS=-12A, VGS=0V - - -1.8 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions trr Reverse Recovery Time IS=-5A, VGS=0V - 20 - ns Qrr Reverse Recovery Charge dI/dt=-100A/s - 16 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.N-CH , P-CH are same . THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4525GEH N-Channel 50 50 10V 7.0V 5.0V 4.5V T A = 25 C ID , Drain Current (A) 40 10V 7.0V 5.0V 4.5V o T A = 150 C 40 ID , Drain Current (A) o 30 20 V G =3.0V 30 20 V G =3.0V 10 10 0 0 0 1 2 3 4 5 0 6 1 V DS , Drain-to-Source Voltage (V) 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 120 ID=4A T A =25 o C 1.6 Normalized RDS(ON) RDS(ON) (m ) 100 ID=6A V G =10V 80 60 1.2 40 0.8 20 2 4 6 8 25 10 50 75 100 125 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 14 Normalized VGS(th) (V) 12 10 IS(A) T j =150 o C T j =25 o C 8 6 4 1.2 0.8 2 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4525GEH N-Channel f=1.0MHz 1000 C iss I D =6A V DS =20V 8 C (pF) VGS , Gate to Source Voltage (V) 12 C oss 100 C rss 4 10 0 0 5 10 15 1 20 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 ID (A) 10 100us 1 1ms 10ms 100ms 1s DC T A =25 o C Single Pulse 0.1 Normalized Thermal Response (Rthjc) 100 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 VG V DS =5V ID , Drain Current (A) 40 T j =25 o C T j =150 o C QG 4.5V 30 QGS QGD 20 10 Charge Q 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5 AP4525GEH P-Channel 50 50 -10V -7.0V -5.0V -4.5V -ID , Drain Current (A) 40 T A = 150 C 40 30 V G = - 3.0V 20 -10V -7.0V -5.0V -4.5V o -ID , Drain Current (A) o T A = 25 C 30 20 V G = - 3.0V 10 10 0 0 0 1 2 3 4 5 0 6 2 -V DS , Drain-to-Source Voltage (V) 4 6 8 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 200 I D = -3 A I D = -5A V G = -10V T A =25 o C 170 Normalized RDS(ON) RDS(ON) (m) 1.4 140 110 80 1.2 1.0 50 0.8 20 2 4 6 8 25 10 -V GS ,Gate-to-Source Voltage (V) 50 75 100 125 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 12 Normalized -VGS(th) (V) 10 -IS(A) 8 6 T j =150 o C T j =25 o C 4 1.2 0.8 2 0 0.4 0.1 0.3 0.5 0.7 0.9 1.1 1.3 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4525GEH P-Channel f=1.0MHz 10000 I D = -5 A V DS = - 2 0 V 8 1000 C iss C (pF) -VGS , Gate to Source Voltage (V) 12 4 C oss C rss 100 0 10 0 4 8 12 16 20 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthjc) Duty factor=0.5 10 -ID (A) 100us 1ms 1 10ms 100ms 1s DC o T c =25 C Single Pulse 0.1 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 VG V DS =-5V -ID , Drain Current (A) 40 T j =25 o C QG T j =150 o C 30 -4.5V QGS QGD 20 10 Charge Q 0 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252(4L) A Millimeters SYMBOLS B MIN NOM MAX A 6.40 6.6 6.80 B 5.2 5.35 5.50 C 9.40 9.80 10.20 D 2.40 2.70 3.00 1.27 REF. P S E3 C M R D S P 0.50 0.65 0.80 E3 3.50 4.00 4.50 R 0.80 1.00 1.20 G 0.40 0.50 0.60 H 2.20 2.30 2.40 J 0.45 0.50 0.55 K 0.00 0.075 0.15 L 0.90 1.20 1.50 M 5.40 5.60 5.80 1.All Dimensions Are in Millimeters. G 2.Dimension Does Not Include Mold Protrusions. H K J L Part Marking Information & Packing : TO-252(4L) Part Number Package Code meet Rohs requirement 4525GEH LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 8