N
O
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MMENDED F
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I
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N
NOT RECOMMENDED FOR NEW DESIGN
MRF9045NR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common - source amplifier applications in 28 volt
base station equipment.
•Typical Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 19 dB
Efficiency — 41% (Two Tones)
IMD — -31 dBc
•Integrated ESD Protection
•Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,
45 Watts CW Output Power
Features
•Excellent Thermal Stability
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
•200_C Capable Plastic Package
•N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
•TO-270-2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS - 0.5, +65 Vdc
Gate- Source Voltage VGS - 0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD177
1.18
W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (1) Unit
Thermal Resistance, Junction to Case RθJC 0.85 °C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22- A113, IPC/JEDEC J -STD - 020 3 260 °C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF9045N
Rev. 12, 9/2008
Freescale Semiconductor
Technical Data
MRF9045NR1
945 MHz, 45 W, 28 V
LATERAL N -CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265-09, STYLE 1
TO-270 -2
PLASTIC
Freescale Semiconductor, Inc., 2008. All rights reserved.
N
O
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MMENDED F
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S
I
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N
NOT RECOMMENDED FOR NEW DESIGN
2
RF Device Data
Freescale Semiconductor
MRF9045NR1
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150 µAdc)
VGS(th) 2 2.8 4 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 350 mAdc)
VGS(Q) 3 3.7 5 Vdc
Drain-Source On- Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on) — 0.22 0.4 Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs — 4 — S
Dynamic Characteristics
Input Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss — 70 — pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 38 — pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.7 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two- Tone Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps 17 19 — dB
Two- Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η38 41 — %
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD — -31 -28 dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL — -14 -9 dB
Two- Tone Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps — 19 — dB
Two- Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η— 41 — %
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD — -31 — dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL — -13 — dB
N
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MMENDED F
O
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S
I
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N
NOT RECOMMENDED FOR NEW DESIGN
MRF9045NR1
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF9045NR1 930-960 MHz Broadband Test Circuit Schematic
Z3 0.14″ x 0.32″ Microstrip
Z4 0.47″ x 0.32″ Microstrip
Z5 0.16″ x 0.32″ x 0.62″ Taper
Z6 0.18″ x 0.62″ Microstrip
Z7 0.56″ x 0.62″ Microstrip
Z8 0.33″ x 0.32″ Microstrip
Z9 0.14″ x 0.32″ Microstrip
Z10 0.36″ x 0.08″ Microstrip
Z11 1.01″ x 0.08″ Microstrip
Z12 0.15″ x 0.08″ Microstrip
Z13 0.29″ x 0.08″ Microstrip
B1, B2 Short Ferrite Beads, Surface Mount
C1, C7, C13, C14 47 pF Chip Capacitors
C2, C8 2.7 pF Chip Capacitors
C3 3.9 pF Chip Capacitor
C4, C5, C8, C9 10 pF Chip Capacitors
C6, C15, C16 10 µF, 35 V Tantalum Surface Mount Capacitors
C10 2.2 pF Chip Capacitor
C11 4.7 pF Chip Capacitor
C12 1.2 pF Chip Capacitor
C17 220 µF, 50 V Electrolytic Capacitor
L1, L2 12.5 nH Inductors
Z1 0.20″ x 0.08″ Microstrip
Z2 0.57″ x 0.12″ Microstrip
B1
C1
RF
INPUT
RF
OUTPUT
VGG VDD
C6
L1
Z5Z4Z3
C2
Z2Z1 Z7
C8
C9
Z8 Z9 Z10 C13
C14
B2
C15 C16 C17
C4
C5
Z6
+ +
C7 ++
C12
C3
Z11 Z12 Z13
L2
DUT
C10 C11
Figure 2. MRF9045NR1 930-960 MHz Broadband Test Circuit Component Layout
CUT OUT AREA
MRF9045MR1 Ground
C1 C2
C3 C4
C5
C6
C7
C8
C9
C10 C11 C12 C13
C14 C15 C16
L1 L2
A1 A2
B1
B2
WB1
WB2
Ground
Vbias Vsupply
C17
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
N
O
T RE
CO
MMENDED F
O
R NEW DE
S
I
G
N
NOT RECOMMENDED FOR NEW DESIGN
4
RF Device Data
Freescale Semiconductor
MRF9045NR1
Figure 3. MRF9045NR1 930-960 MHz Broadband Test Circuit Schematic
Z1 0.260″ x 0.060″ Microstrip
Z2 0.240″ x 0.060″ Microstrip
Z3 0.500″ x 0.100″ Microstrip
Z4 0.215″ x 0.270″ Microstrip
Z5 0.315″ x 0.270″ Microstrip
Z6 0.160″ x 0.270″ x 0.520″ Taper
Z7 0.285″ x 0.520″ Microstrip
Z8 0.140″ x 0.270″Microstrip
Z9 0.450″ x 0.270″Microstrip
Z10 0.250″ x 0.060″Microstrip
Z11 0.720″ x 0.060″Microstrip
Z12 0.490″ x 0.060″Microstrip
Z13 0.290″ x 0.060″Microstrip
Board Taconic RF-35-0300, εr = 3.5
B1 Short Ferrite Bead
B2 Long Ferrite Bead
C1, C8, C13, C14 47 pF Chip Capacitors
C2 0.4- 2.5 pF Variable Capacitor, Johanson Gigatrim
C3 3.6 pF Chip Capacitor
C4 0.8- 8.0 pF Variable Capacitor, Johanson Gigatrim
C5, C6, C9, C10 10 pF Chip Capacitors
C7, C15, C16 10 µF, 35 V Tantalum Chip Capacitors
C11 7.5 pF Chip Capacitor
C12 0.6- 4.5 pF Variable Capacitor, Johanson Gigatrim
C17 220 µF Electrolytic Chip Capacitor
L1, L2 12.5 nH Surface Mount Inductors
WB1, WB2 10 mil Brass Wear Blocks
B1
C1
RF
INPUT
RF
OUTPUT
VGG VDD
C7
L1
Z5Z4Z3
C2
Z2Z1 Z7
C10
C9
Z8 Z9 Z10 C13
L2
C14
B2
C15 C16 C17
C6
C5
Z6
++
C8 ++
C11
C4 C12
Z11 Z12 Z13
C3
Figure 4. MRF9045NR1 930-960 MHz Broadband Test Circuit Component Layout
CUT OUT AREA
WB1
WB2
C1
C2 C3
C5
C6
C7
C8
C9
C10
C4 C11 C12
C13
C14
C15 C16
C17
L1 L2
Rev−02
900 MHz
MRF9045MB
OUTPUTINPUT
VGG
VDD
DUT
B1 B2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
N
O
T RE
CO
MMENDED F
O
R NEW DE
S
I
G
N
NOT RECOMMENDED FOR NEW DESIGN
MRF9045NR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
960
12
20
−38
50
IRL
IMD
f, Frequency (MHz)
Figure 5. Class AB Broadband Circuit
Performance
Gps, POWER GAIN (dB)
18 40
17 35
16 −30
19 45
15 −32
14 −34
13 −36
955950945940935930
VDD = 28 Vdc
Pout = 45 W (PEP)
IDQ = 350 mA
Two−Tone Measurement
100 kHz Tone Spacing
100
17
21
IDQ = 525 mA
420 mA
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain versus Output Power
Gps, POWER GAIN (dB)
350 mA
280 mA
20.5
20
19.5
19
18.5
18
17.5
1010.1 100
−15
IDQ = 280 mA
350 mA
VDD = 28 Vdc
f1 = 945 MHz,
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion versus
Output Power
INTERMODULATION DISTORTION (dBc)IMD,
420 mA
525 mA
−20
−25
−30
−35
−40
−45
−50
−55
1010.1
100
−10
1
7th Order
VDD = 28 Vdc
IDQ = 350 mA
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Intermodulation Distortion Products
versus Output Power
INTERMODULATION DISTORTION (dBc)IMD,
3rd Order
5th Order
−20
−30
−40
−50
−60
−70
−80
10
Figure 9. Power Gain and Efficiency versus
Output Power
η
Gps
−10
−18
−14
, DRAINh
EFFICIENCY (%)
IMD, INTERMODULATION
DISTORTION (dBc)
IRL, INPUT RETURN
LOSS (dB)
−12
−16
100
20
0
50
η
VDD = 28 Vdc
IDQ = 350 mA
f = 945 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Gps, POWER GAIN (dB)
14
30
10
20
12 10
40
110
Gps
22
16
18
60
, DRAIN EFFICIENCY (%)η
0.1
N
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NOT RECOMMENDED FOR NEW DESIGN
6
RF Device Data
Freescale Semiconductor
MRF9045NR1
TYPICAL CHARACTERISTICS
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
22 24 26 28 30 32
VDD, DRAIN VOLTAGE (VOLTS)
Figure 10. Output Voltage versus Supply Voltage
Pout , OUTPUT POWER (WATTS) PEP
Pin = 0.3 W
Pin = 0.6 W
Pin = 1 W
IDQ = 350 mA
f = 945 MHz
Two−Tone Measurement
100 kHz Tone Spacing
Figure 11. MTTF Factor versus Junction Temperature
210
10
11
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
1010
108
MTTF FACTOR (HOURS X AMPS2)
90 110 130 150 170 190100 120 140 160 180 200
109
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MRF9045NR1
7
RF Device Data
Freescale Semiconductor
Figure 12. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
930
945
0.81 - j0.25
0.85 - j0.05
2.03 + j0.09
2.03 + j0.28
VDD = 28 V, IDQ = 350 mA, Pout = 45 W (PEP)
f = 945 MHz
Zo = 5 Ω
f = 930 MHz
f = 945 MHz
f = 930 MHz
Zload
Zsource
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
N
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NOT RECOMMENDED FOR NEW DESIGN
8
RF Device Data
Freescale Semiconductor
MRF9045NR1
PACKAGE DIMENSIONS
N
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NOT RECOMMENDED FOR NEW DESIGN
MRF9045NR1
9
RF Device Data
Freescale Semiconductor
N
O
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CO
MMENDED F
O
R NEW DE
S
I
G
N
NOT RECOMMENDED FOR NEW DESIGN
10
RF Device Data
Freescale Semiconductor
MRF9045NR1
N
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MMENDED F
O
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S
I
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N
NOT RECOMMENDED FOR NEW DESIGN
MRF9045NR1
11
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
12 Sept. 2008 •Data sheet revised to reflect part status change, including use of applicable overlay.
•Replaced Case Outline 1265-08 with 1265- 09, Issue K, p. 1, 8- 10. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min- Max .290 -.320 to .290 Min; E3 changed from Min -Max .150- .180 to .150 Min). Added JEDEC
Standard Package Number.
•Added Product Documentation and Revision History, p. 11
N
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N
NOT RECOMMENDED FOR NEW DESIGN
12
RF Device Data
Freescale Semiconductor
MRF9045NR1
How to Reach Us:
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Freescale Semiconductor, Inc. 2008. All rights reserved.
Document Number: MRF9045N
Rev. 12, 9/2008
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