AP16N50I-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D Simple Drive Requirement Fast Switching Characteristic RoHS Compliant & Halogen-Free BVDSS 500V RDS(ON) 0.4 ID G 16A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D TO-220CFM(I) S The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current, VGS @ 10V 16 A ID@TC=100 Continuous Drain Current, VGS @ 10V 11 A 60 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 52 W Linear Derating Factor 0.42 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 2.4 /W 65 /W 1 200912163 AP16N50I-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 500 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=6.5A - - 0.4 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=8A - 8 - S IDSS Drain-Source Leakage Current VDS=500V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V - - +100 nA ID=16A - 33 53 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=400V - 11 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 9 - nC VDD=200V - 55 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=8A - 50 - ns td(off) Turn-off Delay Time RG=50,VGS=10V - 141 - ns tf Fall Time RD=25 - 40 - ns Ciss Input Capacitance VGS=0V - 1950 3120 pF Coss Output Capacitance VDS=15V - 630 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 20 - pF Min. Typ. IS=16A, VGS=0V - - 1.3 V IS=16A, VGS=0V - 495 - ns dI/dt=100A/s - 10 - uC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by Max junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP16N50I-HF 30 16 16V 12V 10V 7.0V ID , Drain Current (A) 16V 12V 10V 7.0V T C =150 o C ID , Drain Current (A) o T C =25 C 20 V G =6.0V 10 12 V G =6.0V 8 4 0 0 0.0 4.0 8.0 12.0 16.0 0.0 20.0 4.0 V DS , Drain-to-Source Voltage (V) 12.0 16.0 20.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.8 1.2 I D =6.5A V G =10V 2.4 1.1 Normalized RDS(ON) Normalized BVDSS (V) 8.0 1 2.0 1.6 1.2 0.9 0.8 0.8 0.4 -50 0 50 100 150 -50 T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction 50 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature Temperature 1.5 8 1.3 Normalized VGS(th) (V) 10 T j =25 o C T j =150 o C IS(A) 0 T j , Junction Temperature ( o C) 6 4 1.1 0.9 0.7 2 0.5 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP16N50I-HF 10 C iss I D =16A V DS =400V 1000 8 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 10000 12 6 C oss 100 4 10 2 C rss 1 0 0 10 20 30 1 40 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 100us ID (A) 10 1ms 10ms 1 100ms 1s DC o 0 T C =25 C Single Pulse Normalized Thermal Response (Rthjc) Duty factor = 0.5 100 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 0.001 0 0.1 1 10 100 1000 0.00001 0.0001 Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 10 t , Pulse Width (s) V DS ,Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4