1. Product profile
1.1 General description
A 600 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 128 MHz band.
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 128 MHz)
Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances
(RoHS)
1.3 Applications
Industrial, scientific and medical applicatio ns
Broadcast transmitter applications
BLF174XR; BLF174XRS
Power LDMOS transistor
Rev. 1 — 25 June 2013 Product data sheet
Table 1. Application information
Test signal f VDS PLGpD
(MHz) (V) (W) (dB) (%)
CW 108 50 600 28.5 74
pulsed RF 108 50 600 29 73
BLF174XR_BLF174XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 25 June 2013 2 of 13
NXP Semiconductors BLF174XR; BLF174XRS
Power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF174XR (SOT1214A)
1drain1
2drain2
3gate1
4gate2
5source [1]
BLF174XRS (SOT1214B)
1drain1
2drain2
3gate1
4gate2
5source [1]
4
35
1
2sym117
4
35
1
2sym117
Tabl e 3. Ordering i nformation
Type number Package
Name Description Version
BLF174XR - flanged ceramic package; 2 mounting holes; 4 leads SOT1214A
BLF174XRS - earless flanged ceramic package; 4 leads SOT12 14B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 110 V
VGS gate-source voltage 6+11V
Tstg storage temperature 65 +150 C
Tjjunction temperature [1] - 225 C
BLF174XR_BLF174XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 25 June 2013 3 of 13
NXP Semiconductors BLF174XR; BLF174XRS
Power LDMOS transistor
5. Thermal characteristics
[1] Tj is the junction temperature.
[2] Rth(j-c) is measured under RF conditions.
6. Characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tj = 150 C[1][2] 0.18 K/W
Table 6. DC characteristics
Tj = 25
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D=2.75mA 110 - - V
VGS(th) gate-source threshold voltage VDS =10 V; I
D= 275 mA 1.25 1.7 2.25 V
IDSS drain leakage current VGS =0V; V
DS =50V - - 1.4 A
IDSX drain cut-off current VGS =V
GS(th) +3.75 V;
VDS =10V -38-A
IGSS gate leakage current VGS =11V; V
DS =0V - - 140 nA
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID= 9.625 A -0.15-
Table 7. AC characteristics
Tj = 25
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Crs feedback capacitance VGS =0V; V
DS =50V; f=1MHz - 2.4 - pF
Ciss input capacitance VGS =0V; V
DS =50V; f=1MHz - 210 - pF
Coss output capacitance VGS =0V; V
DS =50V; f=1MHz - 94 - pF
Table 8. RF characteristics
Test signal: CW; f = 108 MHz; RF performance at VDS =50V; I
Dq = 100 mA; Tcase = 25
C; unless
otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL = 600 W 27.0 28.5 - dB
RLin input return loss PL = 600 W - 21 13 dB
Ddrain efficiency PL = 600 W 70 74 - %
BLF174XR_BLF174XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 25 June 2013 4 of 13
NXP Semiconductors BLF174XR; BLF174XRS
Power LDMOS transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLF174XR and BLF174XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
VDS =50V; I
Dq =100mA; P
L= 600 W pulsed; f = 108 MHz.
7.2 Impedance information
VGS = 0 V; f = 1 MHz.
Fig 1. Output cap ac itan c e as a function of drain-source voltage; typical values per
section
DDD
9
'6
9
&RVV
S)
Fig 2. Definition of transistor impedance
Table 9. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL= 600 W.
f ZiZL
(MHz) () ()
108 4.66 j12.04 6.47 + j1.16
001aan207
gate 1
gate 2
drain 2
drain 1
ZiZL
BLF174XR_BLF174XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 25 June 2013 5 of 13
NXP Semiconductors BLF174XR; BLF174XRS
Power LDMOS transistor
7.3 Test circuit
Printed-Circuit Board (PCB): RF 35; r = 3.5; thickness = 0.765 mm; thickness copper plating = 35 m.
See Table 10 for a list of components.
Fig 3. Component layout for class-AB production test circuit
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&
7
7
5
5
&
&
&
/
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PP
PP
PP PP
PP
PP
DDD
Table 10. List of components
For test circuit see Figure 3.
Component Description Value Remarks
C1, C2 multilayer ceramic chip capacitor 910 pF [1]
C3 multilayer ceramic chip capacitor 51 pF [2]
C4 multilayer ceramic chip capacitor 43 pF [1]
C5 multilayer ceramic chip capacitor 100 pF [1]
C6 multilayer ceramic chip capacitor 75 pF [1]
C7, C8, C15, C16 multilayer ceramic chip capacitor 820 pF [1]
C9, C10 multilayer ceramic chip capacitor 4.7 F, 100 V TDK
C5750X7R2A475KT
C11, C1 2 electrolytic capacitor 470 F, 63 V
C13, C14 multilayer ceramic chip capacitor 4.7 F, 100 V
C17, C18, C19,
C20 multilayer ceramic chip capa citor 39 pF [1]
C21, C23 multilayer ceramic chip capacitor 22 pF [1]
C22 multilayer ceramic chip capacitor 15 pF [1]
C24 multilayer ceramic chip capacitor 20 pF [1]
C25, C26 multilayer ceramic chip capacitor 27 pF [1]
C27, C28 multilayer ceramic chip capacitor 1 nF [2]
L1, L2, L3, L4 1.5 turn 0.8 mm copper wire D = 3.6 mm,
length = 1.8 mm
BLF174XR_BLF174XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 25 June 2013 6 of 13
NXP Semiconductors BLF174XR; BLF174XRS
Power LDMOS transistor
[1] American Technical Ceramics type 800B or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
7.4 Graphical data
The following figures are measured in a class-AB production test circuit.
7.4.1 1-Tone CW
L5, L6 5.5 turn 0.8 mm copper wire D = 4.4 mm,
length = 5.2 mm
L7, L8 1.5 turn 1.5 mm copper wire D = 6.5 mm,
length = 3.2 mm
R1, R2 resistor 10.0 SMD 1206
T1 semi rigid coax 25 , 160 mm Micro-Coax
UT-090C-25
T2 semi rigid coax 25 , 160 mm Micro-Coax
UT-141C-25
Table 10. List of components …continued
For test circuit see Figure 3.
Component Description Value Remarks
VDS = 50 V; IDq = 100 mA; f = 108 MHz. VDS = 50 V; IDq = 100 mA; f = 108 MHz.
(1) PL(1dB) = 57.9 dBm (613 W)
(2) PL(3dB) = 58.2 dBm (665 W)
Fig 4. Power gain and drain efficiency as function of
output power; typical values Fig 5. Output power as a function of input power;
typical values
DDD
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BLF174XR_BLF174XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 25 June 2013 7 of 13
NXP Semiconductors BLF174XR; BLF174XRS
Power LDMOS transistor
VDS = 50 V; f = 108 MHz.
(1) IDq = 100 mA
(2) IDq = 200 mA
(3) IDq = 300 mA
(4) IDq = 400 mA
(5) IDq = 500 mA
VDS = 50 V; f = 108 MHz.
(1) IDq = 100 mA
(2) IDq = 200 mA
(3) IDq = 300 mA
(4) IDq = 400 mA
(5) IDq = 500 mA
Fig 6. Power gain as a function of output power;
typical values Fig 7. Drain efficiency as a function of output power;
typical values
IDq = 100 mA; f = 108 MHz.
(1) VDS =25V
(2) VDS =30V
(3) VDS =35V
(4) VDS =40V
(5) VDS =45V
(6) VDS =50V
IDq = 100 mA; f = 108 MHz.
(1) VDS =25V
(2) VDS =30V
(3) VDS =35V
(4) VDS =40V
(5) VDS =45V
(6) VDS =50V
Fig 8. Power gain as a function of output power;
typical values Fig 9. Drain efficiency as a function of output power;
typical values
DDD
3/:
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*S
G%G%G%
DDD
3/:
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Ș'
DDD
3/:
*S
*S
G%G%G%
DDD
3/:
Ș'
Ș'
BLF174XR_BLF174XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 25 June 2013 8 of 13
NXP Semiconductors BLF174XR; BLF174XRS
Power LDMOS transistor
8. Package outline
Fig 10. Package outline SOT1214A
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BLF174XR_BLF174XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 25 June 2013 9 of 13
NXP Semiconductors BLF174XR; BLF174XRS
Power LDMOS transistor
Fig 11. Package outline SOT1214B
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BLF174XR_BLF174XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 25 June 2013 10 of 13
NXP Semiconductors BLF174XR; BLF174XRS
Power LDMOS transistor
9. Handling information
10. Abbreviations
11. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 11. Abbreviations
Acronym Description
CW Continuous Wave
ESD ElectroStatic Discharge
HF High Frequency
LDMOS Laterally Diffused Metal-Oxide Semiconductor
MTF Median Time to Failure
SMD Surface Mounted Device
VSWR Voltage Standing-Wave Ratio
XR eXtremely Rugged
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF174XR_BLF174XRS v.1 20130625 Product data sheet - -
BLF174XR_BLF174XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 25 June 2013 11 of 13
NXP Semiconductors BLF174XR; BLF174XRS
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full dat a sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Se miconductors takes no
responsibility for the content in this document if provided by an inf ormation
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
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profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semicondu ctors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
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Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconducto rs products in such equipment or
applications and ther efore such inclu sion and/or use is at the cu stomer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability rela ted to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or t he grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objecti ve specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
BLF174XR_BLF174XRS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 25 June 2013 12 of 13
NXP Semiconductors BLF174XR; BLF174XRS
Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a pri or
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automo tive use. It i s neit her qualif ied nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
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use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLF174XR; BLF174XRS
Power LDMOS transistor
© NXP B.V. 2013. All rig h ts reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 June 2013
Document identifier: BLF174XR_BLF174XRS
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 4
7.1 Ruggedness in class-AB operation . . . . . . . . . 4
7.2 Impedance information. . . . . . . . . . . . . . . . . . . 4
7.3 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.4 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.4.1 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Handling information. . . . . . . . . . . . . . . . . . . . 10
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Contact information. . . . . . . . . . . . . . . . . . . . . 12
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
