410A
PHASE CONTROL THYRIST ORS Hockey Puk Version
ST230C..C SERIES
Bulletin I25162/B
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
IT(AV) 410 A
@ Ths 55 °C
IT(RMS) 780 A
@ Ths 25 °C
ITSM @ 50Hz 5700 A
@ 60H z 5970 A
I2t@
50Hz 163 KA2s
@ 60Hz 149 KA2s
VDRM/VRRM 400 to 1600 V
tqtypical 100 µs
TJ- 40 to 125 °C
Parameters ST230C..C Units
Major Ratings and Characteristics case style TO-200AB (A-PUK)
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ST230C..C Series
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, d i g/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST230C..C Units Conditions
Switching
1000 A/µs
tdTypical delay time 1 .0
tqTypical turn-off time 100
µs
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V DRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max
VVmA
04 400 500
08 800 900
ST230C..C 12 1200 1300 30
14 1400 1500
16 1600 1700
IT(AV) Max. average on-state current 410 (165) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled
IT(RMS) Max. RMS on-state current 780 DC @ 25°C heatsink temperature double side cooled
ITSM Max. peak, one-cycle 5700 t = 10ms No voltage
non-repetitive surge current 5970 A t = 8.3ms reapplied
4800 t = 10m s 100% VRRM
5000 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 163 t = 10ms No voltage Initial TJ = TJ max.
148 t = 8.3ms reapplied
115 t = 10ms 100% VRRM
105 t = 8.3ms rea pplied
I2√t Maximum I2√t for fusing 1630 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1Low level value of threshold
voltage
VT(TO)2High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage 1.69 V Ipk= 880A, TJ = T J max, tp = 10ms sine pulse
IHMaximum holding current 600
ILMax. (typical) latching current 1000 (300)
0.92 (16.7% x π x I T(AV) < I < π x IT(AV)), TJ = TJ max.
0.88 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.81 (I > π x IT(AV)),TJ = TJ max.
Parameter ST230C..C Units Conditions
0.98 (I > π x IT(AV)),TJ = T J max.
On-state Conduction
KA2s
V
mΩ
mA TJ = 25 ° C , anode supply 12V resistive load
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ST230C..C Series
dv/dt Maximum critical rate of rise of off-state voltage
IDRM Max. peak reverse and off-state
IRRM leakage current
Blocking
500 V/µsT
J
= TJ max. linear to 80% rated VDRM
Parameter ST230C..C Units Conditions
30 mA TJ = TJ m ax, rated V DRM/VRRM applied
PGM Maximum peak gate power 10.0 TJ = TJ max, t p ≤ 5ms
PG(AV) Maximum average gate power 2. 0 TJ = TJ max, f = 50Hz, d% = 50
IGM Max. peak positive gate current 3. 0 A TJ = TJ max, t p ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
TJ = - 40°C
mA TJ = 25°C
TJ = 125°C
TJ = - 40°C
VT
J
= 25°C
TJ = 125°C
IGD DC gate current not to trigger 10 mA
Parameter ST230C..C Units Conditions
20
5.0
Triggering
TYP. MAX.
180 -
90 150
40 -
2.9 -
1.8 3.0
1.2 -
VGD DC gate voltage not to trigger 0.25 V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
TJ = TJ max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
VGT DC gate voltage required
to trigger
IGT DC gate current required
to trigger
W
VT
J
= TJ max, tp ≤ 5ms
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, 0.17 DC operation single side cooled
junction to heatsink 0.08 DC operation double side cooled
RthC-hs Max. thermal resistance, 0.033 DC operation single side cooled
case to heatsink 0.017 DC operation double side cooled
F Mounting force, ± 10% 4900 N
(500) (Kg)
wt Approximate weight 50 g
Parameter ST230C..C Units Conditions
K/W
Thermal and Mechanical Specification
°C
Case style TO - 200AB (A-PUK) See Outline Table
K/W
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ST230C..C Series
1- Thyristor
2- Essential part number
3-0 = Converter grade
4-C = Ceramic Puk
5- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6- C = Puk Case TO-200AB (A-PUK)
7- 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8- Critical dv/dt: None = 500V/µsec (Standard selection)
L = 1000V/µsec (Special selection)
Ordering Information Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Device Code
5
3 4
ST 23 0 C 16 C 1
7
68
12
Single Side Double Side Single Side Double Side
180° 0.015 0.017 0.011 0.011 TJ = TJ max.
120° 0.018 0.019 0.019 0.019
90° 0.024 0.024 0.026 0.026 K/W
60° 0.035 0.035 0.036 0.037
30° 0.060 0.060 0.060 0.061
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
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ST230C..C Series
Outline Table
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
40
50
60
70
80
90
100
110
120
130
0 40 80 120 160 200 240 280 320
30° 60° 90° 120° 180°
Average On-stat e Curre nt ( A)
Conduction A ngl e
Maximum Allow ab le Heatsink Tem perat ure ( °C )
ST230C..C Series
(Si ngle Side Cooled)
R (DC) = 0.17 K/W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500
DC
30° 60°90°120°180°
Aver age On- state Cu r rent (A)
Conduction Per i od
Maxim u m A llowable Heat sin k Temperature ( °C)
ST2 30C..C Series
(Singl e Side Cool ed)
R (DC) = 0 .17 K/W
thJ-hs
DIA. MAX.
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
25°± 5°
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
42 (1.65) MAX.
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ST230C..C Series
2000
2500
3000
3500
4000
4500
5000
5500
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Hal f Sine W ave On- state Cur rent (A)
Initial T = 125°C
@ 60 Hz 0.00 83 s
@ 50 Hz 0.01 00 s
J
ST230 C..C Ser ies
At Any Rate d Load Condition And With
Rated V Applied Fo llow ing Surge.
RRM
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
0.01 0.1 1
Pulse Train D uration (s)
Versus Pulse Train Dur ation. Control
Of Conduction May Not Be Maintained.
Peak Hal f Si ne W ave On-state Cur rent (A)
Initial T = 12 5°C
No Voltage Reapplied
Rate d V Re applie d
RRM
J
ST230C..C Serie s
Maximum N on Repetiti ve Surge Curr ent
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
30° 60° 90° 120° 180°
A v erage On -state C u rre nt ( A )
Con du cti on Angl e
Maxim um Allow able Heatsin k Temperatu re ( °C )
ST23 0C..C Series
(Double Side Cooled)
R (DC) = 0 .0 8 K/W
thJ-hs
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800
DC
30° 60° 90° 120° 180°
A v e rage On -state Curre nt ( A)
Conduction Per i od
Maxim um Allowable Heatsin k Temperat ure (°C)
ST2 30C..C Series
(Double Side Cooled)
R (D C) = 0 .08 K/W
thJ-hs
0
100
200
300
400
500
600
700
800
900
1000
1100
0 100 200 300 400 500 600
180°
120°
90°
60°
30° RMS Limit
Con ducti on An gl e
Maxi m um A ve r age On- state Power Loss (W)
Average On- state Curr ent (A )
ST230C..C Series
T = 1 25°C
J
0
200
400
600
800
1000
1200
1400
0 100 200 300 400 500 600 700 800 900
DC
180°
120°
90°
60°
30°
RMS Lim it
Conduction Period
M a x imum A v e rage On -state Power Loss (W)
Aver age On- state Current (A)
ST230C ..C Serie s
T = 125°C
J
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics
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ST230C..C Series
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 11 - Gate Characteristics
100
1000
10000
0.511.522.533.544.55
T = 25°C
J
Instantane ous O n -state C u rre n t (A )
Instan tan eous O n-st ate Volt age (V )
T = 125°C
J
ST2 30C..C Series
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJ-hs
ST23 0C.. C Ser ies
Steady State Valu e
R = 0.17 K/W
(Single Side Cooled)
R = 0.08 K/W
(Double Side Cooled)
(D C Op erat io n )
thJ-hs
thJ-hs
Transient Thermal Impedance Z (K/W)
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj =- 40 °C
(1) (2) (3)
Instantaneous Gate Cu r rent (A)
I nstan taneous Gate Voltage (V )
a) Re comm en ded load line for
b) Re com me nded l o ad l i n e f or
<=30% rated di/dt : 1 0 V, 1 0 ohms
Frequency Lim i ted by PG(AV )
rated di/dt : 2 0V, 1 0 ohms; tr< =1 µs
tr<=1 µs
(1) PG M = 1 0W, tp = 4 ms
(2) PG M = 2 0W, tp = 2 ms
(3) PG M = 4 0W, tp = 1 ms
(4) PGM = 6 0W, tp = 0 .66ms
Rectangul ar gate pulse
Device: ST23 0C..C Series
(4)
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