Advanced Power N AND P-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Simple Drive Requirement N-CH BVDSS 40V
▼ Good Thermal Performance RDS(ON) 36mΩ
▼ Fast Switching Performance ID11.7A
▼ RoHS Compliant P-CH BVDSS -40V
RDS(ON) 72mΩ
Description ID-8.7A
Absolute Maximum Ratings
Symbol Parameter Rating Units
N-channel P-channel
VDS Drain-Source Voltage 40 -40 V
VGS Gate-Source Voltage ±16 ±20 V
ID@TC=25℃Continuous Drain Current3 11.7 -8.7 A
ID@TC=100℃Continuous Drain Current3 7.4 -5.5 A
IDM Pulsed Drain Current1 50 -40 A
PD@TC=25℃ Total Power Dissipation 9 W
Linear Derating Factor 0.07 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJOperating Junction Temperature Range -55 to 150 ℃
Symbol Value Unit
Rthj-c Thermal Resistance Junction-case3Max. 14 ℃/W
Rthj-a Thermal Resistance Junction-ambient3Max. 110 ℃/W
Data and specifications subject to change without notice
Parameter
200628062-1/7
Thermal Data
AP4521GEH
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
S1
TO-252-4L
G1 S2 G2
D1/D2
S1
G1
D1
S2
G2
D2
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 40 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=8A - - 36 mΩ
VGS=4.5V, ID=6A - - 42 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.8 - 2.5 V
gfs Forward Transconductance VDS=10V, ID=8A - 8 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=40V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±16V - - ±30 uA
QgTotal Gate Charge2ID=8A - 7.4 12 nC
Qgs Gate-Source Charge VDS=30V - 1.6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.5 - nC
td(on) Turn-on Delay Time2VDS=20V - 5.3 - ns
trRise Time ID=8A - 19.3 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 18 - ns
tfFall Time RD=2.5Ω-3-
ns
Ciss Input Capacitance VGS=0V - 590 940 pF
Coss Output Capacitance VDS=25V - 90 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF
RgGate Resistance f=1.0MHz - 1.8 2.7 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=8A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=8A, VGS=0V - 18 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC
2/7
AP4521GEH
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -40 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA - -0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-6A - - 72 mΩ
VGS=-4.5V, ID=-4A - - 92 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.8 - -2.5 V
gfs Forward Transconductance VDS=-10V, ID=-6A - 6 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-40V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=-32V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
QgTotal Gate Charge2ID=-6A - 7.3 12 nC
Qgs Gate-Source Charge VDS=-30V - 1.3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 3.6 - nC
td(on) Turn-on Delay Time2VDS=-20V - 6 - ns
trRise Time ID=-6A - 17 - ns
td(off) Turn-off Delay Time RG=1Ω,VGS=-10V - 21 - ns
tfFall Time RD=3.33Ω-5-
ns
Ciss Input Capacitance VGS=0V - 450 720 pF
Coss Output Capacitance VDS=-25V - 80 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF
RgGate Resistance f=1.0MHz - 5.6 8.4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-6A, VGS=0V - - -1.3 V
trr Reverse Recovery Time2IS=-6A, VGS=0V - 22 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 14 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.N-CH , P-CH are same .
3/7
AP4521GEH
N-Channel
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. On-Resistance vs.
Reverse Diode Drain Current
4/7
AP4521GEH
0
10
20
30
40
50
02468
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
7.0V
5.0V
4.5V
VG=3.0V
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25 oCT j=150 oC
0
10
20
30
40
0246
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC= 150 oC
10V
7.0V
5.0V
4.5V
VG=3.0V
20
30
40
50
60
70
80
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=6A
TC=25 oC
0.6
0.9
1.2
1.5
1.8
2.1
2.4
25 50 75 100 125 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=8A
VG=10V
20.0
30.0
40.0
50.0
60.0
0 10203040
ID , Drain Current (A)
RDS(ON) (mΩ)
VGS =4.5V
VGS =10V
N-Channel
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
5/7
AP4521GEH
Q
VG
4.5V
QGS QGD
QG
Charge
0
4
8
12
0 5 10 15 20
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
ID=8A
VDS =30V
10
100
1000
1 5 9 13 17 21 25
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Thermal Response (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25 oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
10
20
30
40
0246
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150 oCT j=25 oC
VDS =5V
P-Channel
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. On-Resistance vs.
Reverse Diode Drain Current
6/7
AP4521GEH
0
10
20
30
40
02468
-V DS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=25oC-10V
-7.0V
-5.0V
-4.5V
VG= - 3.0V
40
80
120
160
246810
-V GS ,Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=-4A
TC=25 oC
0
5
10
15
20
25
30
02468
-V DS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC= 150 oC-10V
-7.0V
-5.0V
-4.5V
VG= - 3.0V
0.4
0.8
1.2
1.6
2.0
25 50 75 100 125 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=-6A
VG=-10V
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-V SD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oCT j=150 oC
40.0
50.0
60.0
70.0
80.0
90.0
100.0
110.0
120.0
0 5 10 15 20
-I D , Drain Current (A)
RDS(ON) (mΩ)
VGS = -4.5V
VGS = -10V
AP4521GEH
P-Channel
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
7/7
0
2
4
6
8
10
12
0 5 10 15 20
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID=-6A
VDS =-30V
10
100
1000
1 5 9 13 17 21 25 29
-V DS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Thermal Response (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1 1 10 100
-V DS , Drain-to-Source Voltage (V)
-ID (A)
TA=25 oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
10
20
0246
-V GS , Gate-to-Source Voltage (V)
-ID , Drain Current (A)
Tj=150 oCT j=25 oC
VDS =-5V
Q
VG
-4.5V
QGS QGD
QG
Charge
