AP4521GEH Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D1/D2 N-CH BVDSS Good Thermal Performance Fast Switching Performance S1 RoHS Compliant G1 40V RDS(ON) 36m ID 11.7A P-CH BVDSS S2 G2 TO-252-4L Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. -40V RDS(ON) 72m ID -8.7A D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25 ID@TC=100 Units P-channel 40 -40 V 16 20 V Continuous Drain Current 3 11.7 -8.7 A Continuous Drain Current 3 7.4 -5.5 A 50 -40 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 9 W Linear Derating Factor 0.07 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Value Unit Max. 14 /W Max. 110 /W Parameter Thermal Resistance Junction-case 3 Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 200628062-1/7 AP4521GEH o N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 40 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.03 - V/ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=8A - - 36 m VGS=4.5V, ID=6A - - 42 m 0.8 - 2.5 V VDS=10V, ID=8A - 8 - S Drain-Source Leakage Current (Tj=25 C) VDS=40V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V - - 25 uA Gate-Source Leakage VGS=16V - - 30 uA ID=8A - 7.4 12 nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance VDS=VGS, ID=250uA o IDSS IGSS VGS=0V, ID=250uA Min. 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=30V - 1.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.5 - nC 2 td(on) Turn-on Delay Time VDS=20V - 5.3 - ns tr Rise Time ID=8A - 19.3 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 18 - ns tf Fall Time RD=2.5 - 3 - ns Ciss Input Capacitance VGS=0V - 590 940 pF Coss Output Capacitance VDS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Rg Gate Resistance f=1.0MHz - 1.8 2.7 Min. Typ. IS=8A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=8A, VGS=0V - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 13 - nC 2/7 AP4521GEH o P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -40 - - V - -0.02 - V/ VGS=-10V, ID=-6A - - 72 m VGS=-4.5V, ID=-4A - - 92 m -0.8 - -2.5 V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS 2 VDS=VGS, ID=-250uA VDS=-10V, ID=-6A - 6 - S o VDS=-40V, VGS=0V - - -1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=-32V, VGS=0V - - -25 uA Gate-Source Leakage VGS=20V - - 100 nA ID=-6A - 7.3 12 nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=-250uA Max. Units 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-30V - 1.3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 3.6 - nC 2 td(on) Turn-on Delay Time VDS=-20V - 6 - ns tr Rise Time ID=-6A - 17 - ns td(off) Turn-off Delay Time RG=1,VGS=-10V - 21 - ns tf Fall Time RD=3.33 - 5 - ns Ciss Input Capacitance VGS=0V - 450 720 pF Coss Output Capacitance VDS=-25V - 80 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Rg Gate Resistance f=1.0MHz - 5.6 8.4 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Min. Typ. IS=-6A, VGS=0V Test Conditions - - Max. Units -1.3 V trr Reverse Recovery Time IS=-6A, VGS=0V - 22 - ns Qrr Reverse Recovery Charge dI/dt=-100A/s - 14 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.N-CH , P-CH are same . 3/7 AP4521GEH N-Channel 50 40 10V 7.0V 5.0V 4.5V ID , Drain Current (A) 40 10V 7.0V 5.0V 4.5V o T C = 150 C 30 ID , Drain Current (A) T C = 25 o C 30 20 V G =3.0V V G =3.0V 20 10 10 0 0 0 2 4 6 8 0 2 6 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 2.4 I D =6A I D =8A V G =10V T C =25 o C 70 Normalized RDS(ON) 2.1 60 RDS(ON) (m) 4 V DS , Drain-to-Source Voltage (V) 50 40 30 1.8 1.5 1.2 0.9 20 0.6 2 4 6 8 10 25 50 75 100 125 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 60.0 10 8 T j =150 o C T j =25 o C IS(A) 6 4 RDS(ON) (m) 50.0 V GS =4.5V 40.0 V GS =10V 30.0 2 20.0 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 0 10 20 30 40 I D , Drain Current (A) Fig 6. On-Resistance vs. Drain Current 4/7 AP4521GEH N-Channel f=1.0MHz 1000 C iss I D =8A V DS =30V 8 C (pF) VGS , Gate to Source Voltage (V) 12 C oss 100 C rss 4 10 0 0 5 10 15 1 20 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 10 ID (A) 100us 1 1ms 10ms 100ms 1s DC T A =25 o C Single Pulse 0.1 0.1 1 10 100 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse 0.01 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 ID , Drain Current (A) V DS =5V VG T j =25 o C 30 T j =150 o C QG 4.5V 20 QGS QGD 10 Charge Q 0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5/7 AP4521GEH P-Channel 40 30 30 -10V -7.0V -5.0V -4.5V 25 -ID , Drain Current (A) T C = 25 C -ID , Drain Current (A) o T C = 150 C -10V -7.0V -5.0V -4.5V o 20 V G = - 3.0V 10 20 15 V G = - 3.0V 10 5 0 0 0 2 4 6 0 8 2 -V DS , Drain-to-Source Voltage (V) 4 6 8 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 160 2.0 I D =-4A I D =-6A V G =-10V T C =25 o C Normalized RDS(ON) RDS(ON) (m) 1.6 120 80 1.2 0.8 40 0.4 2 4 6 8 10 25 -V GS ,Gate-to-Source Voltage (V) 50 75 100 125 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 120.0 110.0 8 100.0 T j =25 o C RDS(ON) (m) T j =150 o C -IS(A) 6 4 90.0 V GS = -4.5V 80.0 70.0 V GS = -10V 60.0 2 50.0 0 40.0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 0 5 10 15 20 -I D , Drain Current (A) Fig 6. On-Resistance vs. Drain Current 6/7 AP4521GEH P-Channel f=1.0MHz 1000 C iss 10 I D =-6A V DS =-30V 8 C (pF) -VGS , Gate to Source Voltage (V) 12 6 100 C oss C rss 4 2 0 10 0 5 10 15 20 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 10 -ID (A) 100us 1ms 1 10ms 100ms 1s DC o T A =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse 0.01 0.1 0.1 1 10 100 0.00001 0.0001 0.001 -V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 20 VG -ID , Drain Current (A) V DS =-5V T j =25 o C T j =150 o C QG -4.5V QGS 10 QGD Charge Q 0 0 2 4 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7/7