BCR16PM-12LG(#B00) - RENESAS TECHNOLOGY

2SC3668

2009-12-21

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC3668

Power Amplifier Applications

Power Switching Applications

• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)

• High collector power dissipation: PC = 1000 mW

• High-speed switching: tstg = 1.0 μ (typ.)

• Complementary to 2SA1428.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 50 V

Collector-emitter voltage VCEO 50 V

Emitter-base voltage VEBO 5 V

Collector current IC 2 A

Base current IB 0.5 A

Collector power dissipation PC 1000 mW

Junction temperature Tj 150 °C

Storage temperature range Tstg −55 to 150 °C

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-7D101A

Weight: 0.2 g (typ.)

2SC3668

2009-12-21

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO V

CB = 50 V, IE = 0 ― ― 1.0 μA

Emitter cut-off current IEBO V

EB = 5 V, IC = 0 ― ― 1.0 μA

Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V

hFE (1)

(Note 2) VCE = 2 V, IC = 0.5 A 70 ― 240

DC current gain

hFE (2) V

CE = 2 V, IC = 1.5 A 40 ― ―

Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 0.05 A ― ― 0.5 V

Base-emitter saturation voltage VBE (sat) I

C = 1 A, IB = 0.05 A ― ― 1.2 V

Transition frequency fT V

CE = 2 V, IC = 0.5 A ― 100 ― MHz

Collector output capacitance Cob V

CB = 10 V, IC = 0, f = 1 MHz ― 30 ― pF

Turn-on time ton ― 0.1 ―

Storage time tstg ― 1.0 ―

Switching time

Fall time tf

IB1 = 0.05 A,IB2 = 0.05 A

duty cycle ≤ 1%

― 0.1 ―

μs

Note 2: hFE (1) classification O: 70 to 140, Y: 120 to 240

Marking

Note 3: A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

IB1

20 μs

VCC = 30 V

Output

30 Ω

IB2

IB1

Input

IB2

C3668

Lot No.

Note 3

Characteristics

indicator

Part No. (or abbreviation code)

2SC3668

2009-12-21

Collector current IC (A)

VCE – IC

Collector current IC (A)

VCE – IC

Collector-emitter voltage VCE (V)

)

Collector-emitter voltage VCE (V)

IC – VCE

Collector current IC (A)

VCE – IC

Collector-emitter voltage VCE (V)

Collector current IC (A)

hFE – IC

DC current gain hFE

Collector-emitter voltage VCE (V)

Collector current IC (A)

VCE (sat) – IC

Collector-emitter saturation voltage

VCE (sat) (V)

1.0

0.8

0.6

0.4

0.2

0.4 0.8 1.2 1.6 2.0 2.4

IB = 5 mA 10 20

Common emitter

Ta = 25° C

1.0

0.8

0.6

0.4

0.2

0.4 0.8 1.2 1.6 2.0 2.4

IB = 5 mA 10 20

Common emitter

Ta = 100°C

0.01

1000

Ta = 100°C

0.03 0.1 0.3 1

100

500

Common emitter

VCE = 2 V

−55

300

2.4

1.6

1.2

0.8

0.4

2 4 6 8 10 12

Common emitter

Ta = 25°C

IB = 2 mA

2.0

1.0

0.8

0.6

0.4

0.2

0.4 0.8 1.2 1.6 2.0 2.4

IB = 5 mA 10 20 30

Common emitter

Ta = −55°C

0.02

0.01 0.03 0.1 0.3 1

0.5

Common emitter

IC/IB = 20

Ta = 100°C

−55

0.3

0.05

0.1

2SC3668

2009-12-21

Base-emitter voltage VBE (V)

IC – VBE

Collector current IC (A)

Ambient temperature Ta (°C)

PC – Ta

Collector dissipation PC (W)

Collector-emitter voltage VCE (V)

Safe Operating Area

Collector current IC (A)

VBE (sat) – IC

Base-emitter saturation voltage

VBE (sat) (V)

0.2

0.4

0.6

0.8

1.0

1.2

20 40 60 100 120 140 160 80

0.1

0.01 0.03 0.1 0.3 1

0.3

0.5

Ta = −55°C

Common emitter

IC/IB = 20

100

2.0

0.4

0.5

1.0

1.5

0.8 1.2 1.6 2.0

Common emitter

VCE = 2 V

25Ta = 100°C −55

0.003

0.005

0.01

0.03

0.05

0.1

0.3

0.5

0.3 1 3 10 30

*: Single nonrepetitive pulse

Ta = 25°C

Curves must be derated

linearly with increase in

temperature

IC max

(continuous)

IC max (pulsed)*

1 ms*

10 ms*

100 ms*

DC operation

Ta = 25°C

1 s*

100 0.1

VCEO max

2SC3668

2009-12-21

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in this document, and related hardware, software and systems (collectively “Product”) without notice.

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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

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