Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) 2620 MHz 15.5 31.5 6.3 --38.0 2655 MHz 15.5 31.1 6.3 --37.3 2690 MHz 15.6 31.1 6.2 --36.7 2620--2690 MHz, 28 W AVG., 28 V W--CDMA, LTE LATERAL N--CHANNEL RF POWER MOSFETs * Capable of Handling 10:1 VSWR, @ 32 Vdc, 2655 MHz, 135 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) * Typical Pout @ 1 dB Compression Point 110 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate--Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * Optimized for Doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. CASE 465--06, STYLE 1 NI--780 MRF8S26120HR3 CASE 465A--06, STYLE 1 NI--780S MRF8S26120HSR3 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 C Case Operating Temperature TC 150 C TJ 225 C CW 141 0.78 W W/C Symbol Value (2,3) Unit Operating Junction Temperature (1,2) CW Operation @ TC = 25C Derate above 25C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 72C, 28 W CW, 28 Vdc, IDQ = 900 mA, 2690 MHz Case Temperature 85C, 110 W CW(4), 28 Vdc, IDQ = 900 mA, 2690 MHz RJC 0.53 0.47 C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. (c) Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF8S26120HR3 MRF8S26120HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 172 Adc) VGS(th) 1.2 2.0 2.7 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 900 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.6 3.0 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.7 Adc) VDS(on) 0.1 0.24 0.3 Vdc Characteristic Off Characteristics On Characteristics Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 28 W Avg., f = 2690 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 14.5 15.6 17.5 dB Drain Efficiency D 28.0 31.1 -- % PAR 5.7 6.2 -- dB ACPR -- --36.7 --34.5 dBc IRL -- --14 --9 dB Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 28 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency Gps (dB) D (%) Output PAR (dB) ACPR (dBc) IRL (dB) 2620 MHz 15.5 31.5 6.3 --38.0 --13 2655 MHz 15.5 31.1 6.3 --37.3 --14 2690 MHz 15.6 31.1 6.2 --36.7 --14 1. Part internally matched both on input and output. (continued) MRF8S26120HR3 MRF8S26120HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, 2620--2690 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB -- 110 -- -- 18 -- W IMD Symmetry @ 80 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres -- 65 -- MHz Gain Flatness in 70 MHz Bandwidth @ Pout = 28 W Avg. GF -- 0.1 -- dB Gain Variation over Temperature (--30C to +85C) G -- 0.015 -- dB/C P1dB -- 0.007 -- dB/C Output Power Variation over Temperature (--30C to +85C) (1) MHz 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. MRF8S26120HR3 MRF8S26120HSR3 RF Device Data Freescale Semiconductor 3 C7 C2 C3 C6 C12 R1 R2 C1 C5 C13* C4 R3 C16 CUT OUT AREA C11* MRF8S26120 Rev. 0 C15* C14* C10 C8 C9 *C11, C13, C14, and C15 are mounted vertically. Figure 1. MRF8S26120HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S26120HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 22 F, 35 V Tantalum Capacitor T494X226K035AT Kemet C2 330 nF, 100 V Chip Capacitor C3225X7R2A334KT TDK C3 15 nF, 100 V Chip Capacitor C3225C0G2A153JT TDK C4, C5, C8 2.2 F, 100 V Chip Capacitors C3225X7R2A225KT TDK C6, C9 22 F, 50 V Chip Capacitors C5750JF1H226ZT TDK C7, C10 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp C11, C12, C13, C14, C15 27 pF Chip Capacitors ATC800B270JT500XT ATC C16 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC R1 1 k, 1/4 W Chip Resistor CRCW12061K00FKEA Vishay R2 10 k, 1/4 W Chip Resistor CRCW120610K0FKEA Vishay R3 7.5 , 1/4 W Chip Resistor CRCW12067R50FNEA Vishay PCB 0.030, r = 3.5 RF--35 Taconic MRF8S26120HR3 MRF8S26120HSR3 4 RF Device Data Freescale Semiconductor 31.6 31.4 D 15.6 31.2 Gps 15.5 IRL 15.4 15.3 --35 --13 --36 --14 --37 15.2 15.1 15 2570 2590 --38 PARC ACPR 2610 2630 2650 2670 --39 2690 --16 --17 --18 --40 2730 2710 --15 --1 --1.1 --1.2 --1.3 --1.4 PARC (dB) 15.7 31.8 IRL, INPUT RETURN LOSS (dB) 15.8 Gps, POWER GAIN (dB) 32 VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 900 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 15.9 ACPR (dBc) 16 D, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS --1.5 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 2. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 28 Watts Avg. --10 VDD = 28 Vdc, Pout = 80 W (PEP), IDQ = 900 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2655 MHz --20 IM3--U --30 IM3--L --40 IM5--L IM5--U IM7--L --50 IM7--U --60 1 100 10 TWO--TONE SPACING (MHz) Figure 3. Intermodulation Distortion Products versus Two--Tone Spacing 16.5 1 60 --25 50 --30 15 14.5 14 13.5 D --1 40 --1 dB = 25 W --2 --2 dB = 35 W --3 --5 20 --3 dB = 45 W --4 30 Gps PARC VDD = 28 Vdc, IDQ = 900 mA, f = 2655 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 10 20 30 40 50 --35 --40 ACPR (dBc) 15.5 0 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 16 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) ACPR --45 10 --50 0 --55 60 Pout, OUTPUT POWER (WATTS) Figure 4. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MRF8S26120HR3 MRF8S26120HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 16 2620 MHz 15 2655 MHz ACPR 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 14 2690 MHz 2655 MHz 2620 MHz 13 12 0 50 --10 40 30 20 10 2655 MHz 2620 MHz 2690 MHz 11 D 2690 MHz Gps 60 1 10 100 0 200 --20 --30 --40 ACPR (dBc) VDD = 28 Vdc, IDQ = 900 mA, Single--Carrier W--CDMA D, DRAIN EFFICIENCY (%) 17 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 5. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 24 0 20 --3 Gain --6 --9 12 IRL 8 4 --12 VDD = 28 Vdc Pin = 0 dBm IDQ = 900 mA 0 2240 2355 IRL (dB) GAIN (dB) 16 --15 2470 2585 2700 2815 2930 3045 --18 3160 f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response MRF8S26120HR3 MRF8S26120HSR3 6 RF Device Data Freescale Semiconductor W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 1 2 3 4 5 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 7 8 9 PEAK--TO--AVERAGE (dB) Figure 7. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 8. Single--Carrier W--CDMA Spectrum MRF8S26120HR3 MRF8S26120HSR3 RF Device Data Freescale Semiconductor 7 VDD = 28 Vdc, IDQ = 900 mA, Pout = 28 W Avg. f MHz Zsource Zload 2570 5.21 -- j5.62 3.17 -- j4.27 2590 5.26 -- j5.33 3.15 -- j4.20 2610 5.31 -- j5.02 3.12 -- j4.12 2630 5.35 -- j4.71 3.10 -- j4.04 2650 5.39 -- j4.39 3.07 -- j3.96 2670 5.46 -- j4.05 3.06 -- j3.88 2690 5.53 -- j3.77 3.06 -- j3.82 2710 5.57 -- j3.47 3.05 -- j3.77 2730 5.59 -- j3.15 3.05 -- j3.73 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF8S26120HR3 MRF8S26120HSR3 8 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 861 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 57 Ideal Pout, OUTPUT POWER (dBm) 56 2690 MHz 55 2620 MHz 54 2655 MHz 53 52 Actual 51 2620 MHz 50 2690 MHz 49 2655 MHz 48 47 46 30 31 32 33 34 36 35 37 38 39 40 41 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 2620 149 51.7 182 52.6 2655 144 51.6 177 52.5 2690 146 51.6 179 52.5 Test Impedances per Compression Level f (MHz) Zsource Zload 2620 P1dB 5.83 -- j7.00 1.44 -- j2.87 2655 P1dB 7.87 -- j6.87 1.72 -- j3.15 2690 P1dB 9.46 -- j5.13 1.52 -- j3.20 Figure 10. Pulsed CW Output Power versus Input Power @ 28 V MRF8S26120HR3 MRF8S26120HSR3 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS MRF8S26120HR3 MRF8S26120HSR3 10 RF Device Data Freescale Semiconductor MRF8S26120HR3 MRF8S26120HSR3 RF Device Data Freescale Semiconductor 11 MRF8S26120HR3 MRF8S26120HSR3 12 RF Device Data Freescale Semiconductor MRF8S26120HR3 MRF8S26120HSR3 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 June 2010 Description * Initial Release of Data Sheet MRF8S26120HR3 MRF8S26120HSR3 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2010. All rights reserved. MRF8S26120HR3 MRF8S26120HSR3 Document Number: RF Device Data MRF8S26120H Rev. 0, 6/2010 Freescale Semiconductor 15