TLN210(F)
2004-01-06
1
TOSHIBA Infrared LED GaAℓAs Infrared Emitter
TLN210(F)
Lead Free Product
Infrared Light-emission Diode For Still Camera
Light Source For Auto Focus
• Optical radiation of current confining LED chip is condensed by a
resin lens.
• High output
• Effective emission diameter of 344µm
• Optical output efficiently radiated in solid angle of 0.984 sr
• Can be operated at VCC = 3V (which is equal to is two cells)
• Optical output vs. temperature characteristic almost constant
with constant forward voltage drive system
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current (Note 1) IF 50 mA
Pulse forward current (Note 2) IFP 400 mA
Reverse voltage VR 1 V
Operating temperature Topr −25~60 °C
Storage temperature Tstg −40~90 °C
(Note 1): Permissible value for acceptance inspection / characteristic
test and is guaranteed for actual application
(Note 2): Within 4 hours at 1 cycle with frequency 10 kHz, duty 50%,
power applied for 0.1s paused for 0.4s
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Forward voltage VF I
F = 50mA ― 1.35 ― V
Pulse forward voltage VFP I
FP = 300mA, t = 10ms ― 1.75 1.95 V
Reverse current IR V
R = 1V ― ― 100 µA
Effective emission spot diameter ― ― ― 348 ― µm
Radiation flux (Note) φe IFP = 300mA, t = 10ms 7 12 ― mW
Half value angle θ2
1 IF = 50mA ― 32.5 ― °
Peak emission wavelength λP I
F = 50mA ― 875 ― nm
Spectral line half width ∆λ I
F = 50mA ― 40 ― nm
(Note): Luminous radiation output to effective angle ±25 degree.
Unit: mm
TOSHIBA
Weight: 0.18g (typ.)
TLN210(F)
2004-01-06
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Precautions
Please be careful of the followings.
1. Soldering temperature: 260°C max
Soldering time: 5s max
(Soldering must be performed 2mm from the bottom of the package.)
2. When forming the leads, bend each lead under the 2mm from the body of the device.
Soldering must be performed after the leads have been formed.
3. The TLN210(F) for a still camera AF use only. Please do not use this device except for a still camera.
TLN210(F)
2004-01-06
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IF – Ta
Ambient temperature Ta (°C)
Allowable forward current IF (mA)
60
0
0 20 40 60 80
40
20
φe – IFP (typ.)
Pulse forward current IFP (mA)
Radiant flux φe (mW)
20
0
0 160 320
480
12
4
16
8
80 240 400
25
60
Ta = -25°C
Wavelength Characteristic
(typ.)
Wave length λ (nm)
Relative intensity
1.0
0
820
0.8
0.6
0.4
0.2
840 860 880 900 920 940
IF = 50mA
Ta = 2 5 ° C
I
FP – VFP (typ.)
Pulse forward voltage VFP (mA)
Pulse forward current IFP (mA)
400
0
0
320
240
160
80
1 2 3 4 5
25
-25
Ta = 60°C
Radiation Pattern (typ.)
Ta = 2 5° C
Relative intensity
0 0.2 0.4 0.6 0.8 1.0
0° 10° 20°
30°
40°
50°
60°
70°
80°
90°
10°
20°
30°
40°
50°
60°
70°
80°
90°
TLN210(F)
2004-01-06
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• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
030619EAC
RESTRICTIONS ON PRODUCT USE
