For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
VCOS - SMT
12
12 - 14
MMIC VCO w/ BUFFER
AMPLIFIER, 2.6 - 2.8 GHz
v04.1209
General Description
Features
Functional Diagram
The HMC386LP4 & HMC386LP4E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs
with integrated resonators, negative resistance
devices, varactor diodes, and buffer ampli ers.
Covering 2.6 to 2.8 GHz, the VCO’s phase noise
performance is excellent over temperature, shock,
vibration and process due to the oscillator’s mono-
lithic structure. Power output is 5 dBm typical from a
single supply of 3V @ 35mA. The voltage controlled
oscillator is packaged in a low cost leadless QFN 4x4
mm surface mount package.
Pout: +5 dBm
Phase Noise: -114 dBc/Hz @100 kHz
No External Resonator Needed
Single Supply: 3V @ 35mA
24 Lead 4x4mm QFN Package: 16 mm
Typical Applications
Low noise MMIC VCO w/Buffer Ampli er for:
• Wireless Infrastructure
• Industrial Controls
• Test Equipment
• Military
Electrical Speci cations, TA = +25 °C, Vcc = +3V
Parameter Min. Typ. Max. Units
Frequency Range 2.6 - 2.8 GHz
Power Output 25 dBm
SSB Phase Noise @ 100 kHz Offset, Vtune = +5V @ RF Output -114 dBc/Hz
Tune Voltage (Vtune) 0 10 V
Supply Current (Icc) (Vcc = +3V) 35 mA
Tune Port Leakage Current 10 µA
Output Return Loss 9dB
Harmonics
2nd
3rd
-5
-15
dBc
dBc
Pulling (into a 2.0:1 VSWR) 3MHz pp
Pushing @ Vtune = +5V 2MHz/V
Frequency Drift Rate 0.3 MHz/°C
HMC386LP4 / 386LP4E