Data Sheet 1 of 10 Rev. 04.1, 2009-02-20
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFA082201E
PTFA082201F
Confidential, Limited Internal Distribution
Description
The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs
designed for CDMA and WCDMA power amplifier applications in
the 869 to 894 MHz band. Features include input and output matching,
and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA082201E
Package H-36260-2
Thermally-Enhanced High Power RF LDMOS FETs
220 W, 869 – 894 MHz
2-Carrier WCDMA Performance
VDD = 30 V, IDQ
= 1950 mA, ƒ = 894 MHz, 3GPP WCDMA
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,
3.84 MHz bandwidth
0
10
20
30
40
50
30 35 40 45 50
Output Power, Avg. (dBm)
Drain Efficiency (%)
-55
-50
-45
-40
-35
-30
IMD (dBc), ACPR (dBc)
IMD
ACPR
Gain
Efficiency
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1950 mA, POUT = 55 W average
ƒ1 = 884 MHz, ƒ2 = 894 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps —18.0 —dB
Drain Efficiency ηD—30 —%
Intermodulation Distortion IMD —–37 —dBc
PTFA082201F
Package H-37260-2
Features
•Thermally-enhanced packages, Pb-free and
RoHS compliant
•Broadband internal matching
•Typical two-carrier WCDMA performance at
894 MHz, 30 V
- Average output power = 55 W
- Linear Gain = 18.0 dB
- Efficiency = 30%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –39.5 dBc
•Typical CW performance, 894 MHz, 30 V
- Output power at P–1dB = 250 W
- Efficiency = 59%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR at 30 V,
220 W (CW) output power
*See Infineon distributor for future availability.
Data Sheet 2 of 10 Rev. 04.1, 2009-02-20
PTFA082201E
PTFA082201F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1950 mA, POUT = 220 W PEP, ƒ = 894 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 17.5 18.0 —dB
Drain Efficiency ηD40 43 —%
Intermodulation Distortion IMD — — –29 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.04 —Ω
Operating Gate Voltage VDS = 30 V, IDQ = 1950 mA VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD700 W
Above 25°C derate by 4.0 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 220 W CW) RθJC 0.25 °C/W
Ordering Information
Type and Version Package Outline Package Description Shipping Marking
PTFA082201E V4 H-36260-2 Thermally-enhanced slotted flange, Tray PTFA082201E
single-ended
PTFA082201F V4 H-37260-2 Thermally-enhanced earless flange, Tray PTFA082201F
single-ended
*See Infineon distributor for future availability.
Data Sheet 3 of 10 Rev. 04.1, 2009-02-20
PTFA082201E
PTFA082201F
Confidential, Limited Internal Distribution
2-Carrier WCDMA Performance
VDD = 30 V, IDQ
= 1950 mA, ƒ = 894 MHz, 3GPP WCDMA
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,
3.84 MHz bandwidth
0
10
20
30
40
50
30 35 40 45 50
Output Power (dBm)
Efficiency (%), Gain (dB)
-55
-50
-45
-40
-35
-30
IMD (dBc), ACPR (dBc)
Efficiency
ACPR
Gain IMD
TCASE = 25°C
TCASE = 90°C
Typical Performance (data taken in a production test fixture)
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1950 mA, ƒ = 894 MHz
15
16
17
18
19
20
21
22
30 35 40 45 50 55 60
Output Power (dBm)
Gain (dB)
0
10
20
30
40
50
60
70
Drain Efficiency (%)
Efficiency
Gain
Two-carrier WCDMA Power Sweep
VDD = 30 V, IDQ = 1600 mA, ƒ1 = 889 MHz, ƒ2 = 894
-60
-50
-40
-30
-20
-10
0
0 10 20 30 40 50
Output Power (dBm)
ACPR (dBc)
5
10
15
20
25
30
35
Drain Efficiency (%)
Efficiency
ACPR
2-Tone Broadband Performance
VDD = 30 V, IDQ = 1950 mA, POUT = 110 W
15
20
25
30
35
40
45
50
850 865 880 895 910
Frequency (MHz)
Efficiency (%), Gain (dB)
-30
-25
-20
-15
-10
-5
0
Return Loss (dB)
Gain
Return Loss
Efficiency
Data Sheet 4 of 10 Rev. 04.1, 2009-02-20
PTFA082201E
PTFA082201F
Confidential, Limited Internal Distribution
IS-95 CDMA Performance
VDD = 30 V, IDQ = 1950 mA, ƒ = 894 MHz
0
10
20
30
40
25 30 35 40 45 50
Output Power, Avg. (dBm)
Drain Efficiency (%)
-80
-70
-60
-50
-40
Adj. Ch. Power Ratio (dBc)
Efficiency
Adj 750 kHz
Alt1 1.98 MHz
Intermodulation Distortion vs. Output Power
VDD = 30 V, IDQ = 1950 mA, ƒ1 = 893, ƒ2 = 894 MHz
-80
-70
-60
-50
-40
-30
-20
30 35 40 45 50 55
Output Power, PEP (dBm)
IMD (dBc)
3rd Order
5th
7th
Typical Performance (cont.)
Output Power vs. Drain Voltage
IDQ = 1950 mA, ƒ = 960 MHz
52
53
54
24 26 28 30 32 34 36
Drain Voltage (V)
Output Power (dBm)
Power Sweep
VDD
= 30 V, ƒ = 894 MHz,
series show IDQ
17
18
19
20
30 35 40 45 50 55
Output Power (dBm)
Power Gain (dB)
2400 mA
1600 mA
1950 mA
Data Sheet 5 of 10 Rev. 04.1, 2009-02-20
PTFA082201E
PTFA082201F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
850 1.792 –1.910 1.999 –0.196
870 1.764 –1.624 1.963 0.165
890 1.737 –1.360 1.924 0.485
910 1.693 –1.147 1.854 0.793
930 1.703 –0.896 1.853 1.087
0.1
0.1
0.1
-
W
AV
E
LE
N
GT
H
S T
O
W
AR
D
G
E
N
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
850 MHz
930 MHz
850 MHz
Z Load
Z Source
930 MHz
Z0 = 50 Ω
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
Typical Performance (cont.)
Data Sheet 6 of 10 Rev. 04.1, 2009-02-20
PTFA082201E
PTFA082201F
Confidential, Limited Internal Distribution
RF_OUTRF_IN
R3
2K V
C3
0.001µF
C2
0.001µF
Q1
BCP56
R2
1.3K V
QQ1
LM7805
C1
0.001µF
VDD
R5
10 V
R4
2K V
R1
1.2K V
C8
33pF
l6
l7
l8
R8
10 V
DUT
C5
0.1µF
C4
10µF
35V
C7
33pF
R7
5.1KV
R6
5.1K V
l1
C9
3.9pF
L1
C11
33pF
C13
10µF
50V
C12
1µF
C16
10µF
50V
C24
3.3pF
C25
33pF
l2l3l4l5
C10
8.2pF
C14
100µF
50V
C15
0.1µF
l9l10 l11 l12 l13
C23
3.3pF
C17
33pF
C19
10µF
50V
C18
1µF
C22
10µF
50V
C20
100µF
50V
C21
0.1µF
L2
VDD
C6
1µF
a082201ef_bd_12-14-07
Reference Circuit
Reference circuit schematic for ƒ = 894 MHz
Circuit Assembly Information
DUT PTFA082201E or PTFA082201F LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 3.48 Rogers RO4350 1 oz. copper
Microstrip Electrical Characteristics at 894 MHz1Dimensions: L x W ( mm) Dimensions: L x W (in.)
l10.065 λ, 50.0 Ω13.13 x 1.60 0.517 x 0.063
l20.049 λ, 38.0 Ω9.78 x 2.54 0.385 x 0.100
l30.024 λ, 38.0 Ω4.83 x 2.54 0.190 x 0.100
l40.083 λ, 7.8 Ω15.44 x 17.83 0.608 x 0.702
l50.027 λ, 7.8 Ω4.95 x 17.83 0.195 x 0.702
l60.190 λ, 78.0 Ω40.64 x 0.74 1.600 x 0.029
l7, l80.183 λ, 60.0 Ω37.54 x 1.24 1.478 x 0.049
l90.095 λ, 8.4 Ω17.68 x 16.48 0.696 x 0.649
l10 (taper) 0.031 λ, 8.4 Ω / 11.2 Ω5.94 x 16.48 / 11.91 0.234 x 0.649 / 0.469
l11 (taper) 0.077 λ, 11.2 Ω / 37.0 Ω14.53 x 11.91 / 2.64 0.572 x 0.469 / 0.104
l12 0.025 λ, 37.0 Ω4.98 x 2.64 0.196 x 0.104
l13 0.028 λ, 50.0 Ω5.74 x 1.60 0.226 x 0.063
1Electrical characteristics are rounded.
Data Sheet 7 of 10 Rev. 04.1, 2009-02-20
PTFA082201E
PTFA082201F
Confidential, Limited Internal Distribution
a082201ef_assy
RF_IN RF_OUT
A082201in_02 A092201in_02
RO4350_.030
A082201out_02 A092201out_02
RO4350_.030
LM
R4
Q1
QQ1
C3
C1
R2
C2
R5
R3C4
C9
R1
C5
C8
R6
R7
C7
C6
R8
C10
C21
C25
C24
C17
C18
C19
C22
L2
C11
C12
C16
L1
C15
C23
C13
VDD
VDD
VDD
C20
C14
Reference circuit assembly diagram (not to scale)*
Reference Circuit (cont.)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND
C5, C15, C21 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C6, C12, C18 Capacitor, 1 µF ATC 920C105
C7, C8, C11, C17, C25 Ceramic capacitor, 33 pF ATC 100B 330
C9 Ceramic capacitor, 3.9 pF ATC 100B 3R9
C10 Ceramic capacitor, 8.2 pF ATC 100B 8R2
C13, C16, C19, C22 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400
C14, C20 Electrolytic capacitor, 100 µF, 50 VDigi-Key P5182-ND
C23, C24 Ceramic capacitor, 3.3 pF ATC 100B 3R3
L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND
R2 Chip resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND
R3 Chip resistor 2 k-ohms Digi-Key P2KECT-ND
R4 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND
R5, R8 Chip resistor 10 ohms Digi-Key P10ECT-ND
R6, R7 Chip resistor 5.1 k-ohms Digi-Key P5.1KECT-ND
*Gerber Files for this circuit available on request
Data Sheet 8 of 10 Rev. 04.1, 2009-02-20
PTFA082201E
PTFA082201F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36260-2
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
C
L
C
L
h-36+37260-2_36260 / 04-25-08
0.0381 [.0015] -A-
22.35±0.23
[.880±.009]
4.83±0.50
[.190±.020]
2X 12.70
[.500]
23.37±0.51
[.920±.020]
4X R 1.52
[R.060]
34.04
[1.340]
D
S
G
FLANGE 13.72
[.540]
45° X 2.03
[.080]
SPH 1.57
[.062]
2X R1.63
[R.064]
4.11±0.38
[.162±.015]
27.94
[1.100]
C
L
1.02
[.040]
+0.10
LID 13.21 –0.15
+.004
[.520 ]
–.006
Data Sheet 9 of 10 Rev. 04.1, 2009-02-20
PTFA082201E
PTFA082201F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-37260-2
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
+0.10
LID 13.21 –0.15
+.004
[.520 ]
–.006
C
L
C
L
h-36+37260-2_37260 / 04-25-08
SPH 1.57
[.062]
23.37±0.51
[.920±.020]
2X 12.70
[.500]
45° X 2.031
[.080]
D
G
S
-A-
4.11±0.38
[.162±.015]
LID 22.35±0.23
[.880±.009]
FLANGE 23.11
[.910]
13.72
[.540]
4.83±0.50
[.190±.020]
0.0381 [.0015]
+0.381
4X R0.508 –0.127
+.015
[R.020 ]
–.005
1.02
[.040]
Data Sheet 10 of 10 Rev. 04.1, 2009-02-20
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-02-20
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
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or +1 408 776 0600 International
PTFA082201E/F V4
Confidential, Limited Internal Distribution
Revision History: 2009-02-20 Data Sheet
Previous Version: 2008-07-08 and 2007-12-13, Data Sheets
Page Subjects (major changes since last revision)
1, 2, 9, 10 Update product to V4, with new package technologies. Updated package outline diagrams.
1 – 4 Update RF characteristics.
7Revise block diagram.
7Fixed typing error
