2N4904 2N4905 2N4906 PNP
2N4913 2N4914 2N4915 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4904, 2N4913
series types are complementary silicon power transistors,
manufactured by the epitaxial base process, designed
for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
2N4904 2N4905 2N4906
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N4913 2N4914 2N4915 UNITS
Collector-Base Voltage VCBO 40 60 80 V
Collector-Emitter Voltage VCEO 40 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 5.0 A
Continuous Base Current IB 1.0 A
Power Dissipation PD 87.5 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 2.0 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
PNP NPN
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=Rated VCBO - 0.1 - 1.0 mA
ICEO V
CE=Rated VCEO - 1.0 - 1.0 mA
ICEV V
CE=Rated VCEO, VBE=1.5V - 0.1 - 1.0 mA
ICEV V
CE=Rated VCEO, VBE=1.5V, TC=150°C - 2.0 - 2.0 mA
IEBO V
EB=5.0V - 1.0 - 1.0 mA
BVCEO I
C=200mA (2N4904, 2N4913) 40 - 40 - V
BVCEO I
C=200mA (2N4905, 2N4914) 60 - 60 - V
BVCEO I
C=200mA (2N4906, 2N4915) 80 - 80 - V
VCE(SAT) I
C=2.5A, IB=250mA - 1.0 - 1.0 V
VCE(SAT) I
C=5.0A, IB=1.0A - 1.5 - 1.5 V
VBE(ON) V
CE=2.0V, IC=2.5A - 1.4 - 1.4 V
hFE V
CE=2.0V, IC=2.5A 25 100 25 100
hFE V
CE=2.0V, IC=5.0A 7.0 - 7.0 -
hfe V
CE=10V, IC=500mA, f=1.0kHz 40 - 20 -
fT V
CE=10V, IC=1.0A, f=1.0MHz 4.0 - 4.0 - MHz
TO-3 CASE
R1 (7-March 2013)
www.centralsemi.com
2N4904 2N4905 2N4906 PNP
2N4913 2N4914 2N4915 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
www.centralsemi.com
R1 (7-March 2013)
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