NCP167 LDO Regulator - Ultra-Low Noise, High PSRR, RF and Analog Circuits 700 mA The NCP167 is a linear regulator capable of supplying 700 mA output current. Designed to meet the requirements of RF and analog circuits, the NCP167 device provides low noise, high PSRR, low quiescent current, and very good load/line transients. The device is designed to work with a 1 mF input and a 1 mF output ceramic capacitor. It is available in two thickness ultra-small 0.35P, 0.65 mm x 0.65 mm Chip Scale Package (CSP) and XDFN4 0.65P, 1 mm x 1 mm. Features * * * * * * * * * * * Operating Input Voltage Range: 1.9 V to 5.5 V Available in Fixed Voltage Option: 1.8 V to 5.2 V 2% Accuracy Over Load/Temperature Ultra Low Quiescent Current Typ. 12 mA Standby Current: Typ. 0.1 mA Very Low Dropout: 210 mV at 700 mA Ultra High PSRR: Typ. 85 dB at 20 mA, f = 1 kHz Ultra Low Noise: 8.5 mVRMS Stable with a 1 mF Small Case Size Ceramic Capacitors Available in -WLCSP4 0.65 mm x 0.65 mm x 0.33 mm -XDFN4 1 mm x 1 mm x 0.4 mm These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications * * * * Battery-powered Equipment Wireless LAN Devices Smartphones, Tablets Cameras, DVRs, STB and Camcorders www.onsemi.com MARKING DIAGRAMS WLCSP4 CASE 567JZ A1 1 XDFN4 CASE 711AJ XM XX M 1 X or XX = Specific Device Code M = Date Code PIN CONNECTIONS IN OUT A1 A2 B1 B2 EN GND (Top View) VOUT VIN IN OUT NCP167 CIN 1 mF Ceramic EN COUT 1 mF Ceramic ON OFF GND (Top View) ORDERING INFORMATION See detailed ordering and shipping information on page 10 of this data sheet. Figure 1. Typical Application Schematics (c) Semiconductor Components Industries, LLC, 2016 September, 2019 - Rev. 3 1 Publication Order Number: NCP167/D NCP167 IN EN ENABLE THERMAL LOGIC SHUTDOWN BANDGAP MOSFET REFERENCE INTEGRATED DRIVER WITH SOFT-START CURRENT LIMIT OUT * ACTIVE DISCHARGE Version A only EN GND Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. CSP4 Pin No. XDFN4 Pin Name A1 4 IN A2 1 OUT B1 3 EN B2 2 GND Common ground connection - EPAD EPAD Expose pad should be tied to ground plane for better power dissipation Description Input voltage supply pin Regulated output voltage. The output should be bypassed with small 1 mF ceramic capacitor. Chip enable: Applying VEN < 0.4 V disables the regulator, Pulling VEN > 1.2 V enables the LDO. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VIN -0.3 V to 6 V Output Voltage VOUT -0.3 to VIN + 0.3, max. 6 V V Chip Enable Input VCE -0.3 to VIN + 0.3, max. 6 V V Output Short Circuit Duration tSC unlimited s Maximum Junction Temperature TJ 150 C TSTG -55 to 150 C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Input Voltage (Note 1) Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22-A114 ESD Machine Model tested per EIA/JESD22-A115 Latchup Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS Rating Symbol Thermal Characteristics, WLCSP4 (Note 3) Thermal Resistance, Junction-to-Air Value Unit 108 RqJA Thermal Characteristics, XDFN4 (Note 3) Thermal Resistance, Junction-to-Air C/W 198 3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51-7 www.onsemi.com 2 NCP167 ELECTRICAL CHARACTERISTICS -40C TJ 125C; VIN = VOUT(NOM) + 1 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise noted. VEN = 1.2 V. Typical values are at TJ = +25C (Note 4). Parameter Test Conditions Operating Input Voltage Symbol Min VIN Output Voltage Accuracy (Note 5) VIN = VOUT(NOM) + 1 V to 5.5 V 0 mA IOUT 700 mA VOUT Line Regulation VOUT(NOM) + 1 V VIN 5.5 V LineReg Load Regulation Dropout Voltage (Note 6) IOUT = 1 mA to 700 mA WLCSP4 IOUT = 700 mA VOUT(NOM) = 1.8 V XDFN4 VOUT(NOM) = 3.3 V Typ Max Unit 1.9 5.5 V -2 +2 % 0.02 %/V 0.001 LoadReg %/mA 0.002 VDO 450 190 290 VOUT = 90% VOUT(NOM) ICL Short Circuit Current VOUT = 0 V ISC 1050 Quiescent Current IOUT = 0 mA IQ 9.7 18 mA Shutdown Current VEN 0.4 V, VIN = 4.8 V IDIS 0.01 1 mA EN Input Voltage "H" VENH EN Input Voltage "L" VENL VEN = 4.8 V IEN EN Pull Down Current Turn-On Time Power Supply Rejection Ratio Output Voltage Noise Thermal Shutdown Threshold Active output discharge resistance COUT = 1 mF, From assertion of VEN to VOUT = 95% VOUT(NOM) 1000 mV Output Current Limit EN Pin Threshold Voltage 800 315 mA 1.2 0.4 0.2 0.5 V mA 120 ms dB VOUT(NOM) = 3.3 V, IOUT = 20 mA f = 100 Hz f = 1 kHz f = 10 kHz f = 100 kHz PSRR 83 85 80 63 f = 10 Hz to 100 kHz IOUT = 20 mA VN 8.5 mVRMS Temperature rising TSDH 160 C Temperature falling TSDL 140 C VEN < 0.4 V, Version A only RDIS 280 W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25C. Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible. 5. Respect SOA. 6. Dropout voltage is characterized when VOUT falls 100 mV below VOUT(NOM). www.onsemi.com 3 NCP167 TYPICAL CHARACTERISTICS 16 2.89 IQ, QUIESCENT CURRENT (mA) VOUT, OUTPUT VOLTAGE (V) 2.90 2.88 2.87 2.86 IOUT = 10 mA 2.85 2.84 VIN = 3.85 V VOUT = 2.85 V CIN = 1 mF COUT = 1 mF 2.83 2.82 2.81 2.80 -40 -20 0 20 40 60 80 100 TJ = -40C 8 6 VOUT = 2.85 V CIN = 1 mF COUT = 1 mF 4 2 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VIN, INPUT VOLTAGE (V) Figure 3. Output Voltage vs. Temperature - VOUT = 2.85 V Figure 4. Quiescent Current vs. Input Voltage 1000 VDROP, DROPOUT VOLTAGE (V) 1200 TJ = 125C 800 TJ = 25C 600 400 TJ = -40C 200 0.001 0.01 0.1 1 10 TJ = 25C 0.35 0.30 0.25 TJ = -40C 0.20 0.15 0.10 0.05 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Figure 5. Ground Current vs. Output Current Figure 6. Dropout Voltage vs. Output Current - VOUT = 1.8 V 0.30 TJ = 125C 0.21 0.18 TJ = 25C 0.15 TJ = -40C 0.12 0.09 0.06 0 0.40 TJ = 125C IOUT, OUTPUT CURRENT (A) VOUT = 2.85 V CIN = 1 mF COUT = 1 mF 0.24 1000 VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 0.45 IOUT, OUTPUT CURRENT (mA) 0.30 0.27 100 VDROP, DROPOUT VOLTAGE (V) IGND, GROUND CURRENT (mA) 10 0.50 1400 VDROP, DROPOUT VOLTAGE (V) TJ = 125C TJ, JUNCTION TEMPERATURE (C) VIN = 3.85 V VOUT = 2.85 V CIN = 1 mF COUT = 1 mF 1600 0.03 0 TJ = 25C 12 0 120 1800 0 14 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 TJ = 125C VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.27 0.24 0.21 0.18 TJ = 25C 0.15 TJ = -40C 0.12 0.09 0.06 0.03 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 IOUT, OUTPUT CURRENT (A) IOUT, OUTPUT CURRENT (A) Figure 7. Dropout Voltage vs. Output Current - VOUT = 2.85 V Figure 8. Dropout Voltage vs. Output Current - VOUT = 3.3 V www.onsemi.com 4 NCP167 TYPICAL CHARACTERISTICS 1050 ISC, SHORT CIRCUIT CURRENT (mA) 1050 1000 950 900 850 800 750 700 650 600 550 -40 -20 0 20 40 60 80 120 100 750 VIN = 3.85 V VOUT = 2.85 V CIN = 1 mF COUT = 1 mF 700 650 600 550 -40 -20 0 20 40 60 80 100 Figure 10. Short Circuit Current vs. Temperature TJ = -40C 800 TJ = 25C 700 600 500 400 300 200 CIN = 1 mF COUT = 1 mF 0.5 1.0 1.5 2.0 120 0.50 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.45 0.40 CIN = 1 mF COUT = 1 mF 0.35 0.30 0.25 VIN = 5.5 V 0.20 0.15 VIN = 3.85 V 0.10 0.05 0 -40 -20 0 20 40 60 80 100 120 VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 11. Short Circuit Current vs. Input Voltage Figure 12. Disable Current vs. Temperature 800 VEN, VOLTAGE ON ENABLE PIN (V) 400 IEN, ENABLE CURRENT (nA) 800 Figure 9. Current Limit vs. Temperature TJ = 125C 0 850 TJ, JUNCTION TEMPERATURE (C) 900 100 0 950 900 TJ, JUNCTION TEMPERATURE (C) 1000 ISC, SHORT CIRCUIT CURRENT (mA) VIN = 3.85 V VOUT = 2.85 V CIN = 1 mF COUT = 1 mF IDIS, DISABLE CURRENT (mA) ICL, CURRENT LIMIT (mA) 1000 360 320 280 240 VEN = 5.5 V 200 160 VIN = 5.5 V VOUT = 2.85 V IOUT = 1 mA CIN = 1 mF COUT = 1 mF 120 80 40 0 -40 -20 0 20 40 60 80 120 100 VIN = 5.5 V VOUT = 2.85 V IOUT = 10 mA CIN = 1 mF COUT = 1 mF 750 700 OFF -> ON 650 600 ON -> OFF 550 500 450 400 350 300 -40 -20 0 20 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 13. Current to Enable Pin vs. Temperature Figure 14. Enable Voltage Threshold vs. Temperature www.onsemi.com 5 NCP167 TYPICAL CHARACTERISTICS 100 90 1 mA RR, RIPPLE REJECTION (dB) RR, RIPPLE REJECTION (dB) 100 80 70 60 50 20 mA 40 VIN = 3.8 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF MLCC, X7R, 0805 30 20 10 0 100 1K 100 mA 10K 100K 1M 10M VOUT = 3.3 V IOUT = 100 mA CIN = 1 mF COUT = 1 mF MLCC, X7R, 0805 100 1K 10K 100K 30 20 10 0 20 mA VIN = 3.6 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF MLCC, X7R, 0805 100 1K 100 mA 10K 100K 1M 10M 1M 3.6 V 70 3.8 V 60 50 40 VOUT = 3.3 V IOUT = 20 mA CIN = 1 mF COUT = 1 mF MLCC, X7R, 0805 30 20 10 100 1K 10K 100K 1M 10M FREQUENCY (kHz) Figure 17. Power Supply Rejection Ratio vs. Input Voltage, IOUT = 100 mA, COUT = 1 mF Figure 18. Power Supply Rejection Ratio vs. Input Voltage, IOUT = 20 mA, COUT = 1 mF 100K VIN = 3.6 V VOUT = 3.3 V IOUT = 20 mA CIN = 1 mF COUT = 1 mF MLCC, X7R, 0805 10K 1K 100 10 80 0 10M 4.3 V 90 FREQUENCY (kHz) 100K OUTPUT VOLTAGE NOISE (nV/Hz) RR, RIPPLE REJECTION (dB) 3.8 V OUTPUT VOLTAGE NOISE (nV/Hz) RR, RIPPLE REJECTION (dB) 3.6 V 50 10 40 100 4.3 V 60 0 50 Figure 16. Power Supply Rejection Ratio vs. Current, VDROP = 0.3 V, COUT = 1 mF 70 10 60 Figure 15. Power Supply Rejection Ratio vs. Current, VDROP = 0.5 V, COUT = 1 mF 80 20 70 FREQUENCY (kHz) 90 30 1 mA 80 FREQUENCY (kHz) 100 40 90 100 1K 10K 100K 1M VIN = 3.8 V VOUT = 3.3 V IOUT = 250 mA CIN = 1 mF COUT = 1 mF MLCC, X7R, 0805 10K 1K 100 10 10 100 1K 10K 100K 1M FREQUENCY (kHz) FREQUENCY (kHz) Figure 19. Output Voltage Noise Spectral Density for VOUT = 3.3 V, IOUT = 20 mA, COUT = 1 mF Figure 20. Output Voltage Noise Spectral Density for VOUT = 3.3 V, IOUT = 250 mA, COUT = 1 mF www.onsemi.com 6 NCP167 APPLICATIONS INFORMATION General maximum value of ESR should be less than 1.7 W. Larger output capacitors and lower ESR could improve the load transient response or high frequency PSRR. It is not recommended to use tantalum capacitors on the output due to their large ESR. The equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. The NCP167 is an ultra-low noise 700 mA low dropout regulator designed to meet the requirements of RF applications and high performance analog circuits. The NCP167 device provides very high PSRR and excellent dynamic response. In connection with low quiescent current this device is well suitable for battery powered application such as cell phones, tablets and other. The NCP167 is fully protected in case of current overload, output short circuit and overheating. Enable Operation Input capacitor connected as close as possible is necessary for ensure device stability. The X7R or X5R capacitor should be used for reliable performance over temperature range. The value of the input capacitor should be 1 mF or greater to ensure the best dynamic performance. This capacitor will provide a low impedance path for unwanted AC signals or noise modulated onto constant input voltage. There is no requirement for the ESR of the input capacitor but it is recommended to use ceramic capacitors for their low ESR and ESL. A good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. The NCP167 uses the EN pin to enable/disable its device and to deactivate/activate the active discharge function. If the EN pin voltage is <0.4 V the device is guaranteed to be disabled. The pass transistor is turned-off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND through a 280 W resistor. In the disable state the device consumes as low as typ. 10 nA from the VIN. If the EN pin voltage >1.2 V the device is guaranteed to be enabled. The NCP167 regulates the output voltage and the active discharge transistor is turned-off. The EN pin has internal pull-down current source with typ. value of 200 nA which assures that the device is turned-off when the EN pin is not connected. In the case where the EN function isn't required the EN should be tied directly to IN. Output Decoupling (COUT) Output Current Limit Input Capacitor Selection (CIN) The NCP167 requires an output capacitor connected as close as possible to the output pin of the regulator. The recommended capacitor value is 1 mF and X7R or X5R dielectric due to its low capacitance variations over the specified temperature range. The NCP167 is designed to remain stable with minimum effective capacitance of 0.7 mF to account for changes with temperature, DC bias and package size. Especially for small package size capacitors such as 0201 the effective capacitance drops rapidly with the applied DC bias. Please refer Figure 21. Output Current is internally limited within the IC to a typical 1000 mA. The NCP167 will source this amount of current measured with a voltage drops on the 90% of the nominal VOUT. If the Output Voltage is directly shorted to ground (VOUT = 0 V), the short circuit protection will limit the output current to 1050 mA (typ.). The current limit and short circuit protection will work properly over whole temperature range and also input voltage range. There is no limitation for the short circuit duration. Thermal Shutdown When the die temperature exceeds the Thermal Shutdown threshold (TSD = 160C typical), Thermal Shutdown event is detected and the device is disabled. The IC will remain in this state until the die temperature decreases below the Thermal Shutdown Reset threshold (TSDU = 140C typical). Once the IC temperature falls below the 140C the LDO is enabled again. The thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking. Reverse Current The PMOS pass transistor has an inherent body diode which will be forward biased in the case that VOUT > VIN. Due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. Figure 21. Capacity vs DC Bias Voltage There is no requirement for the minimum value of Equivalent Series Resistance (ESR) for the COUT but the www.onsemi.com 7 NCP167 Power Supply Rejection Ratio maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. The maximum power dissipation the NCP167 can handle is given by: The NCP167 features very high Power Supply Rejection ratio. If desired the PSRR at higher frequencies in the range 100 kHz - 10 MHz can be tuned by the selection of COUT capacitor and proper PCB layout. Turn-On Time The turn-on time is defined as the time period from EN assertion to the point in which VOUT will reach 98% of its nominal value. This time is dependent on various application conditions such as VOUT(NOM), COUT, TA. P D(MAX) + q JA P D [ V IN @ I GND ) I OUTV IN * V OUT As power dissipated in the NCP167 increases, it might become necessary to provide some thermal relief. The 160 PD(MAX), TA = 25C, 2 oz Cu PD(MAX), TA = 25C, 1 oz Cu 140 1.4 1.2 130 1.0 120 0.8 qJA, 1 oz Cu 110 0.6 0.4 100 qJA, 2 oz Cu 90 0 100 200 300 400 500 0.2 600 PCB COPPER AREA (mm2) Figure 22. qJA and PD (MAX) vs. Copper Area (CSP4) www.onsemi.com 8 0 700 PD(MAX), MAXIMUM POWER DISSIPATION (W) 1.6 150 80 (eq. 1) The power dissipated by the NCP167 for given application conditions can be calculated from the following equations: Power Dissipation qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (C/W) 125oC * T A (eq. 2) 1.0 220 PD(MAX), TA = 25C, 2 oz Cu 210 0.9 200 0.8 PD(MAX), TA = 25C, 1 oz Cu 190 0.7 qJA, 2 oz Cu qJA, 1 oz Cu 180 0.6 170 0.5 160 0.4 150 0 100 200 300 400 PCB COPPER AREA (mm2) 500 600 PD(MAX), MAXIMUM POWER DISSIPATION (W) qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (C/W) NCP167 0.3 700 Figure 23. qJA and PD (MAX) vs. Copper Area (XDFN4) PCB Layout Recommendations To obtain good transient performance and good regulation characteristics place CIN and COUT capacitors close to the device pins and make the PCB traces wide. In order to minimize the solution size, use 0402 or 0201 capacitors with appropriate capacity. Larger copper area connected to the pins will also improve the device thermal resistance. The actual power dissipation can be calculated from the equation above (Equation 2). Expose pad can be tied to the GND pin for improvement power dissipation and lower device temperature. www.onsemi.com 9 NCP167 ORDERING INFORMATION (XDFN4) Device Nominal Output Voltage Description Marking NCP167AMX180TBG 1.8 V CH NCP167AMX280TBG 2.8 V CP NCP167AMX285TBG 2.85 V NCP167AMX300TBG 3.0 V NCP167AMX330TBG 3.3 V NCP167AMX350TBG 3.5 V NCP167BMX330TBG 3.3 V Package Shipping XDFN4 (Pb-Free) 3000 / Tape & Reel Package Shipping WLCSP4 (Pb-Free) 5000 / Tape & Reel CK 700 mA, Active Discharge CQ CR CL 700 mA, Non-Active Discharge AR ORDERING INFORMATION (WLCSP4) Device Nominal Output Voltage Description Marking* Rotation NCP167AFCT180T2G 1.8 V H 0 NCP167AFCT285T2G 2.85 V K 0 NCP167AFCT295T2G 2.95 V P 0 NCP167AFCT330T2G 3.3 V R 0 NCP167AFCT350T2G 3.5 V L 0 NCP167AFCTC350T2G 3.5 V 700 mA, Active Discharge, Backside Coating L 0 NCP167BFCT330T2G 3.3 V 700 mA, Non-Active Discharge R 180 700 mA, Active Discharge *Marking letter with overbar. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP4, 0.64x0.64 CASE 567JZ ISSUE A SCALE 4:1 E E A E PIN A1 REFERENCE DATE 03 AUG 2016 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS. B D DIM A A1 A2 b D E e TOP VIEW A2 0.05 C A 0.05 C NOTE 3 4X A1 SIDE VIEW SEATING PLANE RECOMMENDED SOLDERING FOOTPRINT* A1 PACKAGE OUTLINE e b 0.03 C A B C MILLIMETERS MIN NOM MAX --- --- 0.33 0.04 0.06 0.08 0.23 REF 0.195 0.210 0.225 0.610 0.640 0.670 0.610 0.640 0.670 0.35 BSC e B A 1 2 BOTTOM VIEW DOCUMENT NUMBER: DESCRIPTION: 98AON85781F WLCSP4, 0.64X0.64 0.35 PITCH 4X 0.20 0.35 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS XDFN4 1.0x1.0, 0.65P CASE 711AJ ISSUE A 1 SCALE 4:1 PIN ONE REFERENCE 2X 0.05 C 4X A B D EE EE E 4X DETAIL A 0.05 C 2X TOP VIEW (A3) 0.05 C A 0.05 C NOTE 4 A1 SIDE VIEW e DETAIL A 4X 2 SEATING PLANE 1 XX = Specific Device Code M = Date Code 3 4X b 0.05 M *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. C A B NOTE 3 BOTTOM VIEW RECOMMENDED MOUNTING FOOTPRINT* 2X 0.65 PITCH 0.52 PACKAGE OUTLINE 4X MILLIMETERS MIN MAX 0.33 0.43 0.00 0.05 0.10 REF 0.15 0.25 0.02 0.12 1.00 BSC 0.43 0.53 1.00 BSC 0.65 BSC 0.20 0.30 0.07 0.17 L D2 4 DIM A A1 A3 b b2 D D2 E e L L2 XX M D2 45 5 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 mm FROM THE TERMINAL TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. GENERIC MARKING DIAGRAM* e/2 1 b2 L2 DATE 13 NOV 2015 4X 0.39 0.11 4X 1.20 4X 0.24 0.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON67179E XDFN4, 1.0X1.0, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 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