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Preliminary
Data Sheet
NE85633 / 2SC3356
NPN Silicon RF Transistor
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
FEATURES
•Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
•High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
ORDERING INFORMATION
mroF gniylppuS ytitnauQ egakcaP rebmuN redrO rebmuN traP
gnipat dessobme ediw mm 8• )leer noN( scp 05
NE85633-T1B NE85633-T1B-A
2SC3356-T1B 2SC3356-T1B-A
3-pin Minimold
(Pb-Free)
3 kpcs/reel • Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
I tnerruC rotcelloC C 100 mA
Total Power Dissipation Ptot Note 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Free air
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0021EJ0300
Rev.3.00
Jun 28, 2011
<R>
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NE85633 NE85633-A
2SC3356 2SC3356-A
JEITA
Part No.
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ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
scitsiretcarahC CD
Collector Cut-off Current ICBO VCB = 10 V, IE 0.1 – – 0 =
μ
A
Emitter Cut-off Current IEBO VEB = 1.0 V, IC 0.1 – – 0 =
μ
A
h niaG tnerruC CD FE Note 1 VCE = 10 V, IC = 20 mA 50 120 250 –
scitsiretcarahC FR
Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA – 7 – GHz
Insertion Power Gain ⏐S21e⏐2 VCE = 10 V, IC = 20 mA, f = 1 GHz – 11.5 – dB
V FN erugiF esioN CE = 10 V, IC = 7 mA, f = 1 GHz – 1.1 2.0 dB
Reverse Transfer Capacitance Cre Note 2 VCB = 10 V, IE = 0, f = 1 MHz − 0.55 1.0 pF
Notes 1. Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank Q/YQ R/YR S/YS
Marking R23 R24 R25
hFE Value 50 to 100 80 to 160 125 to 250
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TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
50
100
10
20
1 5 10 055.0
V
CE
= 10 V
250
200
150
100
50
025 50 75 100 125 150
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free air
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
1
0.5
0.3 0.50.2 1 2 5 10 3020
f = 1 MHz
V
CE
= 10 V
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
2
5
0.2
0.5
1
0.1 1 5 10 50 0015.01.0
V
CE
= 10 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
15
10
0
5
0.5 1 10 50 075
V
CE
= 10 V
I
C
= 20 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
25
15
20
5
10
0
0.05 0.1 0.5 1 22.0
MAG
|S
21e
|
2
Remark The graphs indicate nominal characteristics.
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7
0
1
2
3
4
5
6
0.5 1 5 10 50 70
Collector Current IC (mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise Figure NF (dB)
VCE = 10 V
f = 1 GHz
5
4
3
2
1
0
15
3
6
9
12
0
2 4 6 8 10
Collector to Emitter Voltage VCE (V)
NOISE FIGURE, INSERTION POWER GAIN
vs. COLLECTOR TO EMITTER VOLTAGE
Noise Figure NF (dB)
Insertion Power Gain |S21e|2 (dB)
f = 1 GHz
IC = 20 mA
|S21e|2
NF
Remark The graphs indicate nominal characteristics.
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SMITH CHART
S
21e
-FREQUENCY
CONDITION : V
CE
= 10 V, I
C
= 20 mA
90˚
0˚
30˚
–30˚
60˚
–60˚
180˚
150˚
–150˚
120˚
–120˚
–90˚
5 10 15 20
S
21e
0.2 GHz
2.0 GHz
S
12e
-FREQUENCY
CONDITION : V
CE
= 10 V, I
C
= 20 mA
90˚
0˚
30˚
–30˚
60˚
–60˚
180˚
150˚
–150˚
120˚
–120˚
–90˚
0.05 0.1 0.15 0.2 0.25
S
12e
0.2 GHz
2.0 GHz
S
11e
, S
22e
-FREQUENCY
CONDITION : V
CE
= 10 V, 200 MHz Step
60
20
30
40
50
70
80
90
100
110
120
130
140
150
−
160
−
150
−
140
−
130
−
120
−
110
−
100
−90
−
80
−70
−60
−50
−40
−30
−20
−10
0
10
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.02
0.01
0
0.49
0.48
0.47
0.46
0.45
0.44
0.43
0.42
0.41
0.40
0.39
0.38
0.37
0.36
0.35
0.34
0.33
0.32
0.31
0.30
0.29
0.28
0.27
0.26
0.25
0.24
0.23
0.28
0.30
0.32
0.34
0.36
0.38
0.40
0.42
0.44
0.46
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.48
0.49
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.20
0.21
0.22
0.23
0.24
0.25
0.26
0.27
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
REACTANCE COMPONENT
(
R
––––
Z
O
)
(
+JX
––––
Z
O
)
P
OS
ITIVE
R
EA
C
TA
NC
E
CO
M
P
ON
EN
T
NE
G
AT
IVE
R
E
AC
TA
N
CE
C
OM
PO
NE
NT
(
−JX
––––
Z
O
)
0.8
0.7
0.6
0.3
0.2
0.1
0.4
0.5
5.0
10
50
3.0
4.0
1.8
2.0
1.2
0.1
0.9
1.4
1.6
20
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
20
0.2 GHz
2.0 GHz
2.0 GHz
0.2 GHz
I
C
= 20 mA
S
22e
S
11e
I
C
= 20 mA
I
C
= 5 mA
I
C
= 5 mA
0.2
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
0.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.2
0.4
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
1.2
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S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of
the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
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PACKAGE DIMENSIONS
3-PIN MINIMOLD (UNIT: mm)
2.8±0.2
1.5
2
13
2.9±0.2
0.950.95
0.4+0.1
–0.05
0.4+0.1
–0.05
0.65+0.1
–0.15
0.16+0.1
–0.05
0.3
0 to 0.1
1.1 to 1.4
Marking
1. Emitter
2. Base
3. Collector
PIN CONNECTIONS
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All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History NE85633 / 2SC3356 Data Sheet
Description
Rev. Date
Page Summary
− Jun 2004 − Previous No. :PU10209EJ02V0DS
3.00 Jun 28, 2011 p.1 Modification of ORDERING INFORMATION
p.2 Modification of hFE CLASSIFICATION
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