LESHAN RADIO COMPANY, LTD.
MMBV3401LT1–1/2
1
3
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
MMBV3401LT1
Silicon Pin Diode
This device is designd primarily for VHF band switching applications
but is also suitable for use in general-purpose switching circuits.Supplied
in a surface Mount package.
• Rugged Pin Structure Coupled with Wirebond Construction
for Optimum Reliability
• Low Capacitance—0.7pF Typ at VR=20Vdc
• Very Low Series Resistance at 100MHz—0.34Ohms(Typ)@IF=10mAdc
SILICON PIN
SWITCHING DIODE
MAXIMUM RATINGS(EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V R20 Vdc
Forward power Dissipation @T A = 25°C P D 200 mW
Derate above 25°C 2.0 mW/°C
Junction Temperature T J+125 °C
Storage Temperature Range T stg –55 to +150 °C
DEVICE MARKING
MMBV3401LT1=4D
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage V (BR)R 35 — — Vdc
(IR=10µAdc)
Diode Capacitance C T— — 1.0 pF
(VR=20 Vdc)
Series Resistance(figure5) R S— — 0.7 Ω
(IF=10mAdc,f=100MHz)
Reverse Voltage Leakage Current I R — — 0.1 µAdc
(VR=15Vdc)
3
CATHODE 1
ANODE
LESHAN RADIO COMPANY, LTD.
MMBV3401LT1–2/2
MMBV3401LT1
R S , SERIES RESIST ANCE ( OHMS)
I F , FORWARD CURRENT ( mA )
50
40
30
20
10
00.5 0.6 0.7 0.8 0.9 1.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
00 2.0 4.0 6.0 8.0 10 12 14 16
V F , FORWARD VOLTAGE ( VOLTS )
Figure 2. Forward Voltage
I F , FORWARD CURRENT ( mA )
Figure 1. Series Resistance
T
A
= 25°C
100
40
10
4.0
1.0
0.4
0.1
0.04
0.01
0.004
0.001- 60 - 20 0 +20 +60 +100 +140
T A , AMBIENT TEMPERA TURE (
°C
)
Figure 4. Leakage Current
I
R
, REVERSE CURRENT ( µA )
TYPICAL CHARACTERISTICS
20
10
7.0
5.0
2.0
1.0
0.7
0.5
0.2 +3.0 0 -3.0 -6.0 -9.0 -12 -15 -18 -21 -24 -17
V
R
= 25Vdc
C T , DIODE CAP ACITANDE ( pF )
V R , FORWARD VOLTAGE ( VOLTS )
Figure 3. Diode Capacitance
T
A
= 25°C
T
A
= 25°C
