© 2007 IXYS All rights reserved 1 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
20070222
VUM 25-05E
VDSS = 500 V
ID25 =35A
RDS(on) = 0.12 ΩΩ
ΩΩ
Ω
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C to 150°C 500 V
VDGR TVJ = 25°C to 150°C; RGS = 10 kΩ500 V
VGS Continuous ±20 V
IDTS= 85°C 24 A
IDTS= 25°C 35 A
IDM TS= 25°C, tp = ①95 A
PDTS= 85°C 170 W
ISVGS = 0 V, TS = 25°C 24 A
ISM VGS = 0 V, TS = 25°C, tp = ①95 A
VRRM 600 V
IdAV TS= 85°C, rectangular δ = 0.5 40 A
IFSM TVJ = 45°C, t = 10 ms (50 Hz) 300 A
t = 8.3 ms (60 Hz) 320 A
TVJ = 150°C, t = 10 ms (50 Hz) 260 A
t = 8.3 ms (60 Hz) 280 A
PTS= 85°C 36 W
TVJ -40...+150 °C
TJM 150 °C
Tstg -40...+150 °C
VISOL 50/60 Hz t = 1 min 3000 V~
IISOL < 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2-2.5/18-22 Nm/lb.in.
Weight 35 g
MOSFET
Diodes
Module
Features
• Package with DCB ceramic base plate
• Soldering connections for PCB
mounting
• Isolation voltage 3600 V~
• Low RDS(on) HDMOSTM process
• Low package inductance for high
speed switching
• Ultrafast diodes
• Kelvin source for easy drive
Applications
• Three phase input rectifier with power
factor correction consisting of three
modules VUM 25-05
• For power supplies, UPS, SMPS,
drives, welding etc.
Advantages
• Reduced harmonic content of input
currents corresponding to standards
• Rectifier generates maximum DC
power with a given AC fuse
• Wide input voltage range
• No external isolation
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power cycling
capability
① Pulse width limited by TVJ
VRRM (Diode) VDSS Type
VV
600 500 VUM 25-05E
Rectifier Module
for Three Phase Power Factor Correction
Using fast recovery epitaxial
diodes and MOSFET
1
2
3
5
6
9
10
9
6
10
3
2
5
1
© 2007 IXYS All rights reserved 2 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
20070222
VUM 25-05E
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 2 mA 500 V
VGS(th) VDS = 20 V, ID = 20 mA 2 5 V
IGSS VGS = ±20 V, VDS = 0 V ±500 nA
IDSS VDS = 500 V, VGS = 0 V 2 mA
RDS(on) TVJ = 25°C 0.12 Ω
RGint TVJ = 25°C 1.5 Ω
gfs VDS = 15 V, IDS = 12 A 30 S
VDS IDS = 24 A, VGS = 0 V 1.5 V
td(on) 100 ns
td(off) 220 ns
Ciss 8.5 nF
Coss 0.9 nF
Crss 0.3 nF
QgVDS = 250 V, ID = 12 A, VGS = 10 V 350 nC
RthJH with heat transfer paste 0.38 K/W
VFIF= 22 A, TVJ = 25°C 1.65 V
TVJ =150°C 1.4 V
IRVR= 600 V, TVJ = 25°C 1.5 mA
VR= 480 V, TVJ = 25°C 0.25 mA
TVJ =125°C 7 mA
VT0 For power-loss calculations only 1.14 V
rTTVJ = 125°C 10 mΩ
IRM IF= 30 A, -diF/dt = 240 A/µs
VR= 350 V, TVJ = 100°C 10 11 A
RthJH with heat transfer paste 1.8 K/W
VDS = 250 V, IDS = 12 A, VGS = 10 V
Zgen. = 1 Ω, L-load
VDS = 25 V, f = 1 MHz, VGS = 0 V
Diodes MOSFET
Dimensions in mm (1 mm = 0.0394")
© 2007 IXYS All rights reserved 3 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
20070222
VUM 25-05E
234567
0
10
20
30
40
50
60
70
80
-50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
2.5
s
gfs
0 20406080100
0
20
40
60
80
0.51.01.52.02.5
0
20
40
60
80
100
120
10 100 1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 5 10 15 20
0.1
1
10
100
0 100 200 300 400
0
2
4
6
8
10
12
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
A/µs
VDS
V
C
nF
nC
°C
BVDSS
TVJ
norm.
°C
VGS
Qg
V
norm.
VGS(th)
TVJ
RDS(on)
0246810
0
10
20
30
40
50
60
70
80
ID
VDS
V
A
VGS
ID
V
A
VF
A
TVJ = 25°C
TVJ = 125°C
-diF/dt
V
µC
VGS= 5 V
6 V
10 V
7 V
ID=18A
VDSS
VGS(th)
VDS= 250 V
ID = 18 A
IG = 10 mA
Ciss
Coss
Crss
Qrr
TVJ=150°C
TVJ=100°C
TVJ= 25°C
IF = 37 A
IF = 74 A
IF = 37 A
IF = 18.5 A
IF
A
ID
typ.
max.
TVJ=100°C
VR= 350 V
Fig. 1 Typ. output characteristic Fig. 2 Typ. transfer characteristics Fig. 3 Typ. normalized
ID = f (VDS) (MOSFET) ID = f (VGS) (MOSFET) RDS(on) = f (TVJ) (MOSFET)
Fig. 4 Typ. normalized BVDSS = f (TVJ) Fig. 5 Typ. turn-on gate charge Fig. 6 Typ. capacitances C = f (VDS),
VGS(th) = f (TVJ) (MOSFET) characteristics, VGS = f (Qg) (MOSFET) f = 1 MHz (MOSFET)
Fig. 7 Typ. transconductance, Fig. 8 Forward current versus Fig. 9 Recovery charge versus -diF/dt
gfs = f (ID) (MOSFET) voltage drop (Diodes) (Diodes)
© 2007 IXYS All rights reserved 4 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
20070222
VUM 25-05E
0.01 0.1 1 10
0.0
0.5
1.0
1.5
2.0
2.5
0 100 200 300 400 500 600
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0 100 200 300 400 500 600
0
10
20
30
40
50
ZthJC
K/W
t
-diF/dt
0 100 200 300 400 500 600
2
4
6
8
10
12
14
16
18
0.1
0.3
0.5
0.7
0.9
VFR
µs
-diF/dt
IRM
A
20 40 60 80 100 120 140 160
0.4
0.6
0.8
1.0
1.2
1.4
TJ
Kt
°C A/µs
A/µs
Diode
MOSFET
IF = 37 A
IF = 74 A
IF = 37 A
IF = 18.5 A
typ.
max.
IRM
Qr
IF = 37 A
IF = 74 A
IF = 37 A
IF = 18.5 A
typ.
max.
V
diF/dt
A/µss
VFR
tFR
tFR
µs
trr
TVJ=100°C
VR= 350 V
TVJ=100°C
VR= 350 V
VUM 25
Fig. 10 Peak reverse current versus Fig. 11 Dynamic parameters versus Fig. 12 Recovery time versus
-diF/dt (Diodes) junction temperature (Diodes) -diF/dt (Diodes)
Fig. 13 Peak forward voltage versus Fig. 14 Transient thermal impedance junction to case for all devices
-diF/dt (Diodes)
T
VJ
