VUM 25-05E Rectifier Module for Three Phase Power Factor Correction 1 Using fast recovery epitaxial diodes and MOSFET VDSS = 500 V ID25 = 35 A RDS(on) = 0.12 6 VRRM (Diode) VDSS V V 600 500 Type 5 1 9 2 3 5 2 10 VUM 25-05E 9 10 6 3 Symbol Conditions ID ID IDM TVJ = 25C to 150C TVJ = 25C to 150C; RGS = 10 k Continuous MOSFET VDSS VDGR VGS Maximum Ratings TS = 85C TS = 25C TS = 25C, tp = 500 500 20 V V V 24 35 95 A A A 170 W 24 95 A A TS = 85C IS ISM VGS = 0 V, TS = 25C VGS = 0 V, TS = 25C, tp = VRRM IdAV TS = 85C, rectangular = 0.5 600 40 V A TVJ = 45C, t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 300 320 A A TVJ = 150C, t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 260 280 A A 36 W -40...+150 150 -40...+150 C C C 3000 3600 V~ V~ IFSM Diodes PD P TS = 85C VISOL Md Weight Module TVJ TJM Tstg 50/60 Hz IISOL < 1 mA t = 1 min t=1s Mounting torque (M5) Features * Package with DCB ceramic base plate * Soldering connections for PCB mounting * Isolation voltage 3600 V~ * Low RDS(on) HDMOSTM process * Low package inductance for high speed switching * Ultrafast diodes * Kelvin source for easy drive Applications * Three phase input rectifier with power factor correction consisting of three modules VUM 25-05 * For power supplies, UPS, SMPS, drives, welding etc. Advantages * Reduced harmonic content of input currents corresponding to standards * Rectifier generates maximum DC power with a given AC fuse * Wide input voltage range * No external isolation * Easy to mount with two screws * Suitable for wave soldering * High temperature and power cycling capability 2-2.5/18-22 Nm/lb.in. 35 g IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved 20070222 Pulse width limited by TVJ 1-4 VUM 25-05E Symbol Conditions VDSS VGS(th) VGS = 0 V, VDS = 20 V, IGSS Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. V V VGS = 20 V, VDS = 0 V 500 nA IDSS VDS = 500 V, VGS = 0 V 2 mA RDS(on) RGint TVJ = 25C TVJ = 25C 0.12 1.5 1.5 S V 100 220 ns ns MOSFET 5 gfs VDS VDS = 15 V, IDS = 24 A, ID = 2 mA ID = 20 mA 500 2 IDS = 12 A VGS = 0 V 30 td(on) td(off) VDS = 250 V, IDS = 12 A, VGS = 10 V Zgen. = 1 , L-load Ciss Coss Crss VDS = 25 V, f = 1 MHz, VGS = 0 V nF nF nF 350 nC 0.38 K/W VDS = 250 V, ID = 12 A, with heat transfer paste VF IF = 22 A, TVJ = 25C TVJ =150C 1.65 1.4 V V IR VR VR = 600 V, TVJ = 25C = 480 V, TVJ = 25C TVJ =125C 1.5 0.25 7 mA mA mA IRM RthJH Diodes Qg RthJH VT0 rT VGS = 10 V 8.5 0.9 0.3 For power-loss calculations only TVJ = 125C IF VR = 30 A, -diF/dt = 240 A/s = 350 V, TVJ = 100C with heat transfer paste 1.14 V 10 m 10 11 A 1.8 K/W IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved 20070222 Dimensions in mm (1 mm = 0.0394") 2-4 VUM 25-05E 80 A 70 60 6V ID 50 ID 50 40 40 30 RDS(on) ID=18A 2.0 7V 60 2.5 80 A 70 10 V norm. 1.5 TVJ = 25C TVJ = 125C 1.0 30 VGS= 5 V 20 20 10 10 0.5 0 0 0 2 4 6 8 V 10 2 3 4 VDS 6 V 7 0.0 -50 VGS Fig. 1 Typ. output characteristic ID = f (VDS) (MOSFET) Fig. 2 Typ. transfer characteristics ID = f (VGS) (MOSFET) 1.4 BVDSS VGS(th) 1.2 5 12 Fig. 3 Typ. normalized RDS(on) = f (TVJ) (MOSFET) nF 10 VDS= 250 V VDSS ID = 18 A 8 VGS 1.0 norm. 100 C 150 50 100 V VGS(th) 0 TVJ Ciss 10 IG = 10 mA C 6 0.8 Coss 1 4 0.6 2 0.4 -50 0 0 100 C 150 50 Crss 0.1 0 100 TVJ Fig. 4 Typ. normalized BVDSS = f (TVJ) VGS(th) = f (TVJ) (MOSFET) 200 Qg 300 nC 400 0 5 10 15 V 20 VDS Fig. 5 Typ. turn-on gate charge characteristics, VGS = f (Qg) (MOSFET) Fig. 6 Typ. capacitances C = f (VDS), f = 1 MHz (MOSFET) 80 120 3.0 s A C 100 2.5 80 Qrr 2.0 TVJ=100C VR= 350 V max. 60 gfs IF 40 TVJ=150C 60 IF = 37 A IF = 74 A TVJ=100C 1.5 IF = 37 A IF = 18.5 A TVJ= 25C 40 1.0 20 0.5 20 typ. 0 20 40 60 80 A 100 0 0.5 ID Fig. 7 Typ. transconductance, gfs = f (ID) (MOSFET) 1.5 VF 2.0 V 2.5 Fig. 8 Forward current versus voltage drop (Diodes) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved 1.0 0.0 10 100 -diF/dt A/s 1000 Fig. 9 Recovery charge versus -diF/dt (Diodes) 20070222 0 3-4 VUM 25-05E 50 A TVJ=100C VR= 350 V 0.6 1.4 0.5 1.2 40 max. IF = 37 A IF = 74 A IF = 37 A IF = 18.5 A IRM 30 TVJ=100C VR= 350 V s trr Kt 0.4 max. 1.0 0.3 IRM 20 0.8 IF = 37 A IF = 74 A IF = 37 A IF = 18.5 A 0.2 typ. 10 Qr 0.6 0.1 typ. 0.4 20 0 0 100 200 300 400 -diF/dt 500 A/s 600 Fig. 10 Peak reverse current versus -diF/dt (Diodes) 40 60 80 100 120 140 C 160 TJVJ Fig. 11 Dynamic parameters versus junction temperature (Diodes) 18 V 16 0.9 2.5 s K/W 14 0.7 VFR 12 0.0 0 100 200 300 400 A/s 500 600 -diF/dt Fig. 12 Recovery time versus -diF/dt (Diodes) VUM 25 2.0 ZthJC VFR Diode 1.5 0.5 10 1.0 8 tFR 0.3 0.5 tFR 4 2 0 100 200 0.1 300 400 A/s 500 600 diF/dt Fig. 13 Peak forward voltage versus -diF/dt (Diodes) MOSFET 0.0 0.01 1 s 10 t Fig. 14 Transient thermal impedance junction to case for all devices IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved 0.1 20070222 6 4-4